JP4876851B2 - 耐熱樹脂前駆体組成物およびそれを用いた半導体装置 - Google Patents
耐熱樹脂前駆体組成物およびそれを用いた半導体装置 Download PDFInfo
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- JP4876851B2 JP4876851B2 JP2006287214A JP2006287214A JP4876851B2 JP 4876851 B2 JP4876851 B2 JP 4876851B2 JP 2006287214 A JP2006287214 A JP 2006287214A JP 2006287214 A JP2006287214 A JP 2006287214A JP 4876851 B2 JP4876851 B2 JP 4876851B2
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- VCFXAYFIMPGWMJ-UHFFFAOYSA-N naphthalene-1,5-dione;sulfuryl dichloride;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].ClS(Cl)(=O)=O.O=C1C=CC=C2C(=O)C=CC=C21 VCFXAYFIMPGWMJ-UHFFFAOYSA-N 0.000 description 1
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- LYKRPDCJKSXAHS-UHFFFAOYSA-N phenyl-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC(C(=O)C=2C=CC=CC=2)=C1O LYKRPDCJKSXAHS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
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- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 229940095050 propylene Drugs 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical group 0.000 description 1
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- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229940074411 xylene Drugs 0.000 description 1
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- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Formation Of Insulating Films (AREA)
- Materials For Photolithography (AREA)
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| EP3156436B1 (en) | 2015-10-13 | 2018-12-12 | Samsung Electronics Co., Ltd. | Poly(imide-amide)copolymer, method for preparing poly(imide-amide)copolymer, article containing poly(imide-amide)copolymer, and electronic device including same |
| SG11201903455QA (en) * | 2016-11-10 | 2019-05-30 | Toray Industries | Di-Amine Compound, And Heat Resistant Resin And Resin Composition Using The Same |
| GB201810710D0 (en) * | 2018-06-29 | 2018-08-15 | Smartkem Ltd | Sputter Protective Layer For Organic Electronic Devices |
| JP7137631B2 (ja) * | 2018-10-19 | 2022-09-14 | 富士フイルム株式会社 | 硬化膜の製造方法、樹脂組成物、硬化膜、積層体の製造方法および半導体デバイスの製造方法 |
| CN111116401B (zh) * | 2019-12-23 | 2024-07-09 | 盐城通海生物科技有限公司 | 一种c7侧链取代的含氟二胺单体的制备方法 |
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