JP4870572B2 - 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 - Google Patents

半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 Download PDF

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JP4870572B2
JP4870572B2 JP2006543856A JP2006543856A JP4870572B2 JP 4870572 B2 JP4870572 B2 JP 4870572B2 JP 2006543856 A JP2006543856 A JP 2006543856A JP 2006543856 A JP2006543856 A JP 2006543856A JP 4870572 B2 JP4870572 B2 JP 4870572B2
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light emitting
emitting device
cavity
submount
semiconductor substrate
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JP2007535130A5 (https=
JP2007535130A (ja
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ケラー ベルント
イベットソン ジェイムズ
エス．アンドリュース ピーター
エイチ．ネグレイ ジェラルド
ヒラー ノルベルト
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
JP2006543856A 2003-12-09 2004-11-24 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法 Expired - Fee Related JP4870572B2 (ja)

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US52805403P 2003-12-09 2003-12-09
US60/528,054 2003-12-09
US10/987,894 US7518158B2 (en) 2003-12-09 2004-11-12 Semiconductor light emitting devices and submounts
US10/987,894 2004-11-12
PCT/US2004/039619 WO2005062393A2 (en) 2003-12-09 2004-11-24 Semiconductor light emitting devices and submounts and methods for forming the same

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JP2011147906A Division JP2011193030A (ja) 2003-12-09 2011-07-04 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法

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JP2007535130A JP2007535130A (ja) 2007-11-29
JP2007535130A5 JP2007535130A5 (https=) 2008-01-17
JP4870572B2 true JP4870572B2 (ja) 2012-02-08

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JP2011147906A Pending JP2011193030A (ja) 2003-12-09 2011-07-04 半導体発光デバイスおよびサブマウント、ならびにそれを形成するための方法

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US (3) US7518158B2 (https=)
EP (1) EP1692729B1 (https=)
JP (2) JP4870572B2 (https=)
KR (1) KR101097694B1 (https=)
CA (1) CA2547832A1 (https=)
TW (1) TW200531312A (https=)
WO (1) WO2005062393A2 (https=)

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US8847257B2 (en) 2014-09-30
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US7518158B2 (en) 2009-04-14
US8138000B2 (en) 2012-03-20
US20120138996A1 (en) 2012-06-07
WO2005062393A2 (en) 2005-07-07
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CA2547832A1 (en) 2005-07-07
JP2011193030A (ja) 2011-09-29
US20090159918A1 (en) 2009-06-25
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JP2007535130A (ja) 2007-11-29
KR101097694B1 (ko) 2011-12-22

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