JP4869634B2 - ウエハスケール・パッケージ用のリッドおよびその形成方法 - Google Patents

ウエハスケール・パッケージ用のリッドおよびその形成方法 Download PDF

Info

Publication number
JP4869634B2
JP4869634B2 JP2005163977A JP2005163977A JP4869634B2 JP 4869634 B2 JP4869634 B2 JP 4869634B2 JP 2005163977 A JP2005163977 A JP 2005163977A JP 2005163977 A JP2005163977 A JP 2005163977A JP 4869634 B2 JP4869634 B2 JP 4869634B2
Authority
JP
Japan
Prior art keywords
layer
lid
forming
solder
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005163977A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006013484A (ja
JP2006013484A5 (https=
Inventor
ケンドラ・ジェイ・ギャラップ
ジェイムス・エー・マシューズ
マーサ・ジョンソン
Original Assignee
アバゴ・テクノロジーズ・ファイバー・アイピー（シンガポール）プライベート・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アバゴ・テクノロジーズ・ファイバー・アイピー（シンガポール）プライベート・リミテッド filed Critical アバゴ・テクノロジーズ・ファイバー・アイピー（シンガポール）プライベート・リミテッド
Publication of JP2006013484A publication Critical patent/JP2006013484A/ja
Publication of JP2006013484A5 publication Critical patent/JP2006013484A5/ja
Application granted granted Critical
Publication of JP4869634B2 publication Critical patent/JP4869634B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/4277—Protection against electromagnetic interference [EMI], e.g. shielding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Micromachines (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Physical Vapour Deposition (AREA)
JP2005163977A 2004-06-24 2005-06-03 ウエハスケール・パッケージ用のリッドおよびその形成方法 Expired - Fee Related JP4869634B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US877615 2004-06-24
US10/877,615 US7045827B2 (en) 2004-06-24 2004-06-24 Lids for wafer-scale optoelectronic packages

Publications (3)

Publication Number Publication Date
JP2006013484A JP2006013484A (ja) 2006-01-12
JP2006013484A5 JP2006013484A5 (https=) 2008-07-17
JP4869634B2 true JP4869634B2 (ja) 2012-02-08

Family

ID=35504672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005163977A Expired - Fee Related JP4869634B2 (ja) 2004-06-24 2005-06-03 ウエハスケール・パッケージ用のリッドおよびその形成方法

Country Status (4)

Country Link
US (3) US7045827B2 (https=)
JP (1) JP4869634B2 (https=)
CN (1) CN1713468B (https=)
DE (1) DE102005010926B4 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750356B2 (en) * 2005-05-04 2010-07-06 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Silicon optical package with 45 degree turning mirror
CN100559559C (zh) * 2007-03-08 2009-11-11 探微科技股份有限公司 制作光学元件封盖的方法
JP2009032843A (ja) * 2007-07-26 2009-02-12 Nec Electronics Corp 半導体装置とその製造方法
US20100032702A1 (en) * 2008-08-11 2010-02-11 E. I. Du Pont De Nemours And Company Light-Emitting Diode Housing Comprising Fluoropolymer
CN101599522B (zh) * 2009-06-30 2011-05-25 厦门市三安光电科技有限公司 一种采用绝缘介质阻挡层的垂直发光二极管及其制备方法
JP2011222675A (ja) * 2010-04-07 2011-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
US8582618B2 (en) 2011-01-18 2013-11-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device
US8315287B1 (en) 2011-05-03 2012-11-20 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device
US9423297B2 (en) 2011-12-22 2016-08-23 3M Innovative Properties Company Optical device with optical element and sensor for sampling light
DE102012217793A1 (de) 2012-09-28 2014-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellungsverfahren
JP2014158157A (ja) * 2013-02-15 2014-08-28 Asahi Kasei Electronics Co Ltd 圧電デバイス
NO2944700T3 (https=) * 2013-07-11 2018-03-17
US9793237B2 (en) 2015-10-19 2017-10-17 Qorvo Us, Inc. Hollow-cavity flip-chip package with reinforced interconnects and process for making the same
US9799637B2 (en) * 2016-02-12 2017-10-24 Qorvo Us, Inc. Semiconductor package with lid having lid conductive structure
EP3385762A1 (en) * 2017-04-03 2018-10-10 Indigo Diabetes N.V. Optical assembly with hermetically sealed cover cap
US10242967B2 (en) 2017-05-16 2019-03-26 Raytheon Company Die encapsulation in oxide bonded wafer stack
JP6970336B2 (ja) * 2017-08-04 2021-11-24 日亜化学工業株式会社 光源装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3657029A (en) * 1968-12-31 1972-04-18 Texas Instruments Inc Platinum thin-film metallization method
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
US4791075A (en) * 1987-10-05 1988-12-13 Motorola, Inc. Process for making a hermetic low cost pin grid array package
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
US5336928A (en) * 1992-09-18 1994-08-09 General Electric Company Hermetically sealed packaged electronic system
US5500540A (en) * 1994-04-15 1996-03-19 Photonics Research Incorporated Wafer scale optoelectronic package
DE4440935A1 (de) * 1994-11-17 1996-05-23 Ant Nachrichtentech Optische Sende- und Empfangseinrichtung
EP0899781A3 (en) * 1997-08-28 2000-03-08 Lucent Technologies Inc. Corrosion protection in the fabrication of optoelectronic assemblies
US6062461A (en) * 1998-06-03 2000-05-16 Delphi Technologies, Inc. Process for bonding micromachined wafers using solder
JP2000019357A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 光アレイモジュール及び反射鏡アレイ
JP2000114655A (ja) * 1998-09-30 2000-04-21 Toshiba Corp サブマウントミラー方式面型レーザ
DE19845484C2 (de) * 1998-10-02 2002-09-26 Infineon Technologies Ag Mikrooptischer Baustein und Verfahren zu seiner Herstellung
US6818464B2 (en) * 2001-10-17 2004-11-16 Hymite A/S Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
TW560018B (en) * 2001-10-30 2003-11-01 Asia Pacific Microsystems Inc A wafer level packaged structure and method for manufacturing the same
CA2473836A1 (en) * 2002-02-14 2003-08-21 Silex Microsystems Ab Deflectable microstructure and method of manufacturing the same through bonding of wafers
US6696645B2 (en) * 2002-05-08 2004-02-24 The Regents Of The University Of Michigan On-wafer packaging for RF-MEMS
EP1517166B1 (en) * 2003-09-15 2015-10-21 Nuvotronics, LLC Device package and methods for the fabrication and testing thereof
US20050063431A1 (en) * 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
US20050063648A1 (en) * 2003-09-19 2005-03-24 Wilson Robert Edward Alignment post for optical subassemblies made with cylindrical rods, tubes, spheres, or similar features
US7215032B2 (en) * 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection

Also Published As

Publication number Publication date
CN1713468B (zh) 2011-10-05
JP2006013484A (ja) 2006-01-12
US20050285242A1 (en) 2005-12-29
US20060121635A1 (en) 2006-06-08
DE102005010926A1 (de) 2006-03-30
US20050285131A1 (en) 2005-12-29
DE102005010926B4 (de) 2008-05-08
US7534636B2 (en) 2009-05-19
CN1713468A (zh) 2005-12-28
US7045827B2 (en) 2006-05-16

Similar Documents

Publication Publication Date Title
JP4869634B2 (ja) ウエハスケール・パッケージ用のリッドおよびその形成方法
US12276816B2 (en) Wafer level microstructures for an optical lens
US5853960A (en) Method for producing a micro optical semiconductor lens
US11002907B2 (en) Stepped optical bridge for connecting semiconductor waveguides
US6947224B2 (en) Methods to make diffractive optical elements
WO2015126475A1 (en) Lasers with beam shape and beam direction modification
US9638980B2 (en) Modulator and production method thereof
JPH10242589A (ja) 半導体デバイスの製造方法
US20030155327A1 (en) Manufacturing method for optical integrated circuit having spatial reflection type structure
CA2365209A1 (en) Method for micro-fabricating a pixelless infrared imaging device
JP3965848B2 (ja) 光学素子、レーザアレイ、および光学素子の製造方法
US20040188787A1 (en) Light receiving element and method of manufacturing the same
CN119677260B (zh) 一种led芯片及其制作方法
JP2012079990A (ja) 集積化光半導体装置
CN120090040A (zh) 半导体器件的制作方法及半导体器件结构
WO2003044571A2 (en) Coating of optical device facets at the wafer-level
KR20090072460A (ko) 마이크로렌즈의 제조방법
JPS63182882A (ja) 光集積素子の製造方法
JP5264764B2 (ja) エッチストップを有するエッチングされたファセットリッジレーザ
JP3209654B2 (ja) エンコーダ
CN116325388A (zh) 用于非密封环境的半导体器件的形成
JP2004071986A (ja) 半導体光素子及びその製造方法

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20060322

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070320

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080603

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080603

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110510

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110506

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110810

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111018

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111116

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141125

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees