DE102005010926B4 - Deckel für optoelektronische Wafermaßstabsgehäuse und Verfahren zu dessen Herstellung - Google Patents

Deckel für optoelektronische Wafermaßstabsgehäuse und Verfahren zu dessen Herstellung Download PDF

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Publication number
DE102005010926B4
DE102005010926B4 DE102005010926A DE102005010926A DE102005010926B4 DE 102005010926 B4 DE102005010926 B4 DE 102005010926B4 DE 102005010926 A DE102005010926 A DE 102005010926A DE 102005010926 A DE102005010926 A DE 102005010926A DE 102005010926 B4 DE102005010926 B4 DE 102005010926B4
Authority
DE
Germany
Prior art keywords
layer
forming
cavity
solder
over
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102005010926A
Other languages
German (de)
English (en)
Other versions
DE102005010926A1 (de
Inventor
Kendra J. Sunnyvale Gallup
James A. Milpitas Matthews
Martha Greeley Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies Fiber IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies Fiber IP Singapore Pte Ltd filed Critical Avago Technologies Fiber IP Singapore Pte Ltd
Publication of DE102005010926A1 publication Critical patent/DE102005010926A1/de
Application granted granted Critical
Publication of DE102005010926B4 publication Critical patent/DE102005010926B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/4277—Protection against electromagnetic interference [EMI], e.g. shielding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Micromachines (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Physical Vapour Deposition (AREA)
DE102005010926A 2004-06-24 2005-03-09 Deckel für optoelektronische Wafermaßstabsgehäuse und Verfahren zu dessen Herstellung Expired - Fee Related DE102005010926B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/877,615 2004-06-24
US10/877,615 US7045827B2 (en) 2004-06-24 2004-06-24 Lids for wafer-scale optoelectronic packages

Publications (2)

Publication Number Publication Date
DE102005010926A1 DE102005010926A1 (de) 2006-03-30
DE102005010926B4 true DE102005010926B4 (de) 2008-05-08

Family

ID=35504672

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005010926A Expired - Fee Related DE102005010926B4 (de) 2004-06-24 2005-03-09 Deckel für optoelektronische Wafermaßstabsgehäuse und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (3) US7045827B2 (https=)
JP (1) JP4869634B2 (https=)
CN (1) CN1713468B (https=)
DE (1) DE102005010926B4 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750356B2 (en) * 2005-05-04 2010-07-06 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Silicon optical package with 45 degree turning mirror
CN100559559C (zh) * 2007-03-08 2009-11-11 探微科技股份有限公司 制作光学元件封盖的方法
JP2009032843A (ja) * 2007-07-26 2009-02-12 Nec Electronics Corp 半導体装置とその製造方法
US20100032702A1 (en) * 2008-08-11 2010-02-11 E. I. Du Pont De Nemours And Company Light-Emitting Diode Housing Comprising Fluoropolymer
CN101599522B (zh) * 2009-06-30 2011-05-25 厦门市三安光电科技有限公司 一种采用绝缘介质阻挡层的垂直发光二极管及其制备方法
JP2011222675A (ja) * 2010-04-07 2011-11-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
US8582618B2 (en) 2011-01-18 2013-11-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device
US8315287B1 (en) 2011-05-03 2012-11-20 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device
US9423297B2 (en) 2011-12-22 2016-08-23 3M Innovative Properties Company Optical device with optical element and sensor for sampling light
DE102012217793A1 (de) 2012-09-28 2014-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Herstellungsverfahren
JP2014158157A (ja) * 2013-02-15 2014-08-28 Asahi Kasei Electronics Co Ltd 圧電デバイス
NO2944700T3 (https=) * 2013-07-11 2018-03-17
US9793237B2 (en) 2015-10-19 2017-10-17 Qorvo Us, Inc. Hollow-cavity flip-chip package with reinforced interconnects and process for making the same
US9799637B2 (en) * 2016-02-12 2017-10-24 Qorvo Us, Inc. Semiconductor package with lid having lid conductive structure
EP3385762A1 (en) * 2017-04-03 2018-10-10 Indigo Diabetes N.V. Optical assembly with hermetically sealed cover cap
US10242967B2 (en) 2017-05-16 2019-03-26 Raytheon Company Die encapsulation in oxide bonded wafer stack
JP6970336B2 (ja) * 2017-08-04 2021-11-24 日亜化学工業株式会社 光源装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500540A (en) * 1994-04-15 1996-03-19 Photonics Research Incorporated Wafer scale optoelectronic package
US6062461A (en) * 1998-06-03 2000-05-16 Delphi Technologies, Inc. Process for bonding micromachined wafers using solder
US6487224B1 (en) * 1998-09-30 2002-11-26 Kabushiki Kaisha Toshiba Laser diode assembly
US20040087043A1 (en) * 2001-10-30 2004-05-06 Asia Pacific Microsystems, Inc. Package structure and method for making the same

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US3657029A (en) * 1968-12-31 1972-04-18 Texas Instruments Inc Platinum thin-film metallization method
US4773972A (en) * 1986-10-30 1988-09-27 Ford Motor Company Method of making silicon capacitive pressure sensor with glass layer between silicon wafers
US4791075A (en) * 1987-10-05 1988-12-13 Motorola, Inc. Process for making a hermetic low cost pin grid array package
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
US5336928A (en) * 1992-09-18 1994-08-09 General Electric Company Hermetically sealed packaged electronic system
DE4440935A1 (de) * 1994-11-17 1996-05-23 Ant Nachrichtentech Optische Sende- und Empfangseinrichtung
EP0899781A3 (en) * 1997-08-28 2000-03-08 Lucent Technologies Inc. Corrosion protection in the fabrication of optoelectronic assemblies
JP2000019357A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 光アレイモジュール及び反射鏡アレイ
DE19845484C2 (de) * 1998-10-02 2002-09-26 Infineon Technologies Ag Mikrooptischer Baustein und Verfahren zu seiner Herstellung
US6818464B2 (en) * 2001-10-17 2004-11-16 Hymite A/S Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes
CA2473836A1 (en) * 2002-02-14 2003-08-21 Silex Microsystems Ab Deflectable microstructure and method of manufacturing the same through bonding of wafers
US6696645B2 (en) * 2002-05-08 2004-02-24 The Regents Of The University Of Michigan On-wafer packaging for RF-MEMS
EP1517166B1 (en) * 2003-09-15 2015-10-21 Nuvotronics, LLC Device package and methods for the fabrication and testing thereof
US20050063431A1 (en) * 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
US20050063648A1 (en) * 2003-09-19 2005-03-24 Wilson Robert Edward Alignment post for optical subassemblies made with cylindrical rods, tubes, spheres, or similar features
US7215032B2 (en) * 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5500540A (en) * 1994-04-15 1996-03-19 Photonics Research Incorporated Wafer scale optoelectronic package
US6062461A (en) * 1998-06-03 2000-05-16 Delphi Technologies, Inc. Process for bonding micromachined wafers using solder
US6487224B1 (en) * 1998-09-30 2002-11-26 Kabushiki Kaisha Toshiba Laser diode assembly
US20040087043A1 (en) * 2001-10-30 2004-05-06 Asia Pacific Microsystems, Inc. Package structure and method for making the same

Also Published As

Publication number Publication date
CN1713468B (zh) 2011-10-05
JP2006013484A (ja) 2006-01-12
US20050285242A1 (en) 2005-12-29
US20060121635A1 (en) 2006-06-08
DE102005010926A1 (de) 2006-03-30
US20050285131A1 (en) 2005-12-29
US7534636B2 (en) 2009-05-19
CN1713468A (zh) 2005-12-28
JP4869634B2 (ja) 2012-02-08
US7045827B2 (en) 2006-05-16

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD.,

8128 New person/name/address of the agent

Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA

8364 No opposition during term of opposition
R081 Change of applicant/patentee

Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE., SG

Free format text: FORMER OWNER: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD., SINGAPORE, SG

Effective date: 20130606

R082 Change of representative

Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELL, DE

Effective date: 20130606

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20141001