CN1713468A - 用于晶片级光电封装的封盖 - Google Patents
用于晶片级光电封装的封盖 Download PDFInfo
- Publication number
- CN1713468A CN1713468A CNA2005100598904A CN200510059890A CN1713468A CN 1713468 A CN1713468 A CN 1713468A CN A2005100598904 A CNA2005100598904 A CN A2005100598904A CN 200510059890 A CN200510059890 A CN 200510059890A CN 1713468 A CN1713468 A CN 1713468A
- Authority
- CN
- China
- Prior art keywords
- layer
- reflector
- barrier layer
- chamber
- capping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title description 8
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 229910000679 solder Inorganic materials 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 230000012010 growth Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 238000005546 reactive sputtering Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims 1
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- 238000007789 sealing Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/4277—Protection against electromagnetic interference [EMI], e.g. shielding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02251—Out-coupling of light using optical fibres
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Micromachines (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
- Optical Elements Other Than Lenses (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/877,615 | 2004-06-24 | ||
US10/877,615 US7045827B2 (en) | 2004-06-24 | 2004-06-24 | Lids for wafer-scale optoelectronic packages |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1713468A true CN1713468A (zh) | 2005-12-28 |
CN1713468B CN1713468B (zh) | 2011-10-05 |
Family
ID=35504672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100598904A Expired - Fee Related CN1713468B (zh) | 2004-06-24 | 2005-04-01 | 用于晶片级光电封装的封盖及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7045827B2 (zh) |
JP (1) | JP4869634B2 (zh) |
CN (1) | CN1713468B (zh) |
DE (1) | DE102005010926B4 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101599522B (zh) * | 2009-06-30 | 2011-05-25 | 厦门市三安光电科技有限公司 | 一种采用绝缘介质阻挡层的垂直发光二极管及其制备方法 |
CN102119452A (zh) * | 2008-08-11 | 2011-07-06 | 纳幕尔杜邦公司 | 包含含氟聚合物的发光二极管外壳 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7750356B2 (en) * | 2005-05-04 | 2010-07-06 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Silicon optical package with 45 degree turning mirror |
JP2009032843A (ja) * | 2007-07-26 | 2009-02-12 | Nec Electronics Corp | 半導体装置とその製造方法 |
JP2011222675A (ja) * | 2010-04-07 | 2011-11-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US8582618B2 (en) | 2011-01-18 | 2013-11-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive or refractive lens on the semiconductor laser device |
US8315287B1 (en) | 2011-05-03 | 2012-11-20 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Surface-emitting semiconductor laser device in which an edge-emitting laser is integrated with a diffractive lens, and a method for making the device |
JP2015503820A (ja) * | 2011-12-22 | 2015-02-02 | スリーエム イノベイティブ プロパティズ カンパニー | センサを備える光学装置、及びその製造及び使用方法 |
DE102012217793A1 (de) * | 2012-09-28 | 2014-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Herstellungsverfahren |
JP2014158157A (ja) * | 2013-02-15 | 2014-08-28 | Asahi Kasei Electronics Co Ltd | 圧電デバイス |
NO2944700T3 (zh) * | 2013-07-11 | 2018-03-17 | ||
US9793237B2 (en) | 2015-10-19 | 2017-10-17 | Qorvo Us, Inc. | Hollow-cavity flip-chip package with reinforced interconnects and process for making the same |
US9799637B2 (en) * | 2016-02-12 | 2017-10-24 | Qorvo Us, Inc. | Semiconductor package with lid having lid conductive structure |
EP3385762A1 (en) | 2017-04-03 | 2018-10-10 | Indigo Diabetes N.V. | Optical assembly with hermetically sealed cover cap |
US10242967B2 (en) | 2017-05-16 | 2019-03-26 | Raytheon Company | Die encapsulation in oxide bonded wafer stack |
JP6970336B2 (ja) * | 2017-08-04 | 2021-11-24 | 日亜化学工業株式会社 | 光源装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3657029A (en) * | 1968-12-31 | 1972-04-18 | Texas Instruments Inc | Platinum thin-film metallization method |
US4773972A (en) * | 1986-10-30 | 1988-09-27 | Ford Motor Company | Method of making silicon capacitive pressure sensor with glass layer between silicon wafers |
US4791075A (en) * | 1987-10-05 | 1988-12-13 | Motorola, Inc. | Process for making a hermetic low cost pin grid array package |
JPH01264285A (ja) * | 1988-04-15 | 1989-10-20 | Omron Tateisi Electron Co | 面発光型半導体レーザ |
US5336928A (en) * | 1992-09-18 | 1994-08-09 | General Electric Company | Hermetically sealed packaged electronic system |
US5500540A (en) * | 1994-04-15 | 1996-03-19 | Photonics Research Incorporated | Wafer scale optoelectronic package |
DE4440935A1 (de) * | 1994-11-17 | 1996-05-23 | Ant Nachrichtentech | Optische Sende- und Empfangseinrichtung |
EP0899781A3 (en) * | 1997-08-28 | 2000-03-08 | Lucent Technologies Inc. | Corrosion protection in the fabrication of optoelectronic assemblies |
US6062461A (en) * | 1998-06-03 | 2000-05-16 | Delphi Technologies, Inc. | Process for bonding micromachined wafers using solder |
JP2000019357A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 光アレイモジュール及び反射鏡アレイ |
JP2000114655A (ja) * | 1998-09-30 | 2000-04-21 | Toshiba Corp | サブマウントミラー方式面型レーザ |
DE19845484C2 (de) * | 1998-10-02 | 2002-09-26 | Infineon Technologies Ag | Mikrooptischer Baustein und Verfahren zu seiner Herstellung |
US6818464B2 (en) * | 2001-10-17 | 2004-11-16 | Hymite A/S | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
TW560018B (en) * | 2001-10-30 | 2003-11-01 | Asia Pacific Microsystems Inc | A wafer level packaged structure and method for manufacturing the same |
AU2003206552A1 (en) * | 2002-02-14 | 2003-09-04 | Silex Microsystems Ab | Deflectable microstructure and method of manufacturing the same through bonding of wafers |
US6696645B2 (en) * | 2002-05-08 | 2004-02-24 | The Regents Of The University Of Michigan | On-wafer packaging for RF-MEMS |
EP2937897A3 (en) * | 2003-09-15 | 2016-03-23 | Nuvotronics LLC | Device package and methods for the fabrication and testing thereof |
US20050063648A1 (en) * | 2003-09-19 | 2005-03-24 | Wilson Robert Edward | Alignment post for optical subassemblies made with cylindrical rods, tubes, spheres, or similar features |
US20050063431A1 (en) * | 2003-09-19 | 2005-03-24 | Gallup Kendra J. | Integrated optics and electronics |
US7215032B2 (en) * | 2005-06-14 | 2007-05-08 | Cubic Wafer, Inc. | Triaxial through-chip connection |
-
2004
- 2004-06-24 US US10/877,615 patent/US7045827B2/en active Active
-
2005
- 2005-03-09 DE DE102005010926A patent/DE102005010926B4/de not_active Expired - Fee Related
- 2005-03-31 US US11/097,534 patent/US7534636B2/en not_active Expired - Fee Related
- 2005-04-01 CN CN2005100598904A patent/CN1713468B/zh not_active Expired - Fee Related
- 2005-06-03 JP JP2005163977A patent/JP4869634B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-18 US US11/335,091 patent/US20060121635A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102119452A (zh) * | 2008-08-11 | 2011-07-06 | 纳幕尔杜邦公司 | 包含含氟聚合物的发光二极管外壳 |
CN101599522B (zh) * | 2009-06-30 | 2011-05-25 | 厦门市三安光电科技有限公司 | 一种采用绝缘介质阻挡层的垂直发光二极管及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
US7534636B2 (en) | 2009-05-19 |
JP4869634B2 (ja) | 2012-02-08 |
US7045827B2 (en) | 2006-05-16 |
US20050285131A1 (en) | 2005-12-29 |
JP2006013484A (ja) | 2006-01-12 |
DE102005010926B4 (de) | 2008-05-08 |
CN1713468B (zh) | 2011-10-05 |
US20060121635A1 (en) | 2006-06-08 |
US20050285242A1 (en) | 2005-12-29 |
DE102005010926A1 (de) | 2006-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20061208 Address after: Singapore Singapore Applicant after: Avago Technologies ECBU IP Address before: Singapore Singapore Applicant before: Avago Technologies General IP (Singapore) Pte. Ltd. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) CORPORAT Free format text: FORMER OWNER: AVAGO TECHNOLOGIES ECBU IP Effective date: 20130509 |
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