NO2944700T3 - - Google Patents
Info
- Publication number
- NO2944700T3 NO2944700T3 NO15158185A NO15158185A NO2944700T3 NO 2944700 T3 NO2944700 T3 NO 2944700T3 NO 15158185 A NO15158185 A NO 15158185A NO 15158185 A NO15158185 A NO 15158185A NO 2944700 T3 NO2944700 T3 NO 2944700T3
- Authority
- NO
- Norway
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/60—Seals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/809—Constructional details of image sensors of hybrid image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/66—Conductive materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
- H10W76/42—Fillings
- H10W76/48—Fillings including materials for absorbing or reacting with moisture or other undesired substances
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0207—Bolometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/035—Soldering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/072—Connecting or disconnecting of bump connectors
- H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/939,400 US9093444B2 (en) | 2013-07-11 | 2013-07-11 | Wafer level package solder barrier used as vacuum getter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO2944700T3 true NO2944700T3 (https=) | 2018-03-17 |
Family
ID=51293136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO15158185A NO2944700T3 (https=) | 2013-07-11 | 2012-10-20 |
Country Status (9)
| Country | Link |
|---|---|
| US (4) | US9093444B2 (https=) |
| EP (1) | EP3019441B1 (https=) |
| JP (1) | JP6122220B2 (https=) |
| KR (1) | KR101752107B1 (https=) |
| CN (2) | CN109231160A (https=) |
| CA (1) | CA2916672C (https=) |
| IL (1) | IL243086A (https=) |
| NO (1) | NO2944700T3 (https=) |
| WO (1) | WO2015006327A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3006236B1 (fr) * | 2013-06-03 | 2016-07-29 | Commissariat Energie Atomique | Procede de collage metallique direct |
| US9771258B2 (en) | 2015-06-24 | 2017-09-26 | Raytheon Company | Wafer level MEMS package including dual seal ring |
| US20170081178A1 (en) * | 2015-09-22 | 2017-03-23 | Freescale Semiconductor, Inc. | Semiconductor device package with seal structure |
| US9570321B1 (en) * | 2015-10-20 | 2017-02-14 | Raytheon Company | Use of an external getter to reduce package pressure |
| US9893027B2 (en) * | 2016-04-07 | 2018-02-13 | Nxp Usa, Inc. | Pre-plated substrate for die attachment |
| US9938134B2 (en) * | 2016-04-14 | 2018-04-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Getter electrode to improve vacuum level in a microelectromechanical systems (MEMS) device |
| US10115692B2 (en) | 2016-09-14 | 2018-10-30 | International Business Machines Corporation | Method of forming solder bumps |
| JP2018054496A (ja) * | 2016-09-29 | 2018-04-05 | セイコーインスツル株式会社 | パッケージおよび赤外線センサ |
| KR101952368B1 (ko) * | 2016-11-25 | 2019-02-26 | 오승래 | 환자 맞춤형 수술기구 |
| US10457549B2 (en) * | 2017-02-03 | 2019-10-29 | Taiwan Semiconductor Manfacturing Company Ltd. | Semiconductive structure and manufacturing method thereof |
| JP7408266B2 (ja) * | 2017-06-14 | 2024-01-05 | 日亜化学工業株式会社 | 光源装置 |
| CN109879240B (zh) * | 2017-12-06 | 2021-11-09 | 有研工程技术研究院有限公司 | 一种厚膜吸气材料的制备方法 |
| US20190202684A1 (en) | 2017-12-29 | 2019-07-04 | Texas Instruments Incorporated | Protective bondline control structure |
| FR3088319B1 (fr) * | 2018-11-08 | 2020-10-30 | Ulis | Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe |
| CN110148571B (zh) * | 2018-12-10 | 2022-03-11 | 上海欧菲尔光电技术有限公司 | 一种八英寸红外探测器封装窗口及其制备方法 |
| US10968099B2 (en) * | 2018-12-28 | 2021-04-06 | Texas Instruments Incorporated | Package moisture control and leak mitigation for high vacuum sealed devices |
| CN111048472B (zh) * | 2020-01-07 | 2021-12-03 | 深圳南信国际电子有限公司 | 一种带镀层的红外探测器真空封装结构 |
| JP2021136413A (ja) * | 2020-02-28 | 2021-09-13 | 国立研究開発法人産業技術総合研究所 | 封止構造体およびその製造方法 |
| US11670616B2 (en) * | 2020-06-22 | 2023-06-06 | Epir, Inc. | Modified direct bond interconnect for FPAs |
| WO2023199375A1 (ja) * | 2022-04-11 | 2023-10-19 | 三菱電機株式会社 | 中空パッケージ |
| EP4611042A4 (en) * | 2022-10-26 | 2026-01-07 | Sony Semiconductor Solutions Corp | CASE AND CASE MANUFACTURING PROCESS |
| WO2025154408A1 (ja) * | 2024-01-18 | 2025-07-24 | パナソニックＩｐマネジメント株式会社 | 赤外線センサ |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5111049A (en) * | 1990-12-21 | 1992-05-05 | Santa Barbara Research Center | Remote fired RF getter for use in metal infrared detector dewar |
| US5789859A (en) * | 1996-11-25 | 1998-08-04 | Micron Display Technology, Inc. | Field emission display with non-evaporable getter material |
| US5701008A (en) * | 1996-11-29 | 1997-12-23 | He Holdings, Inc. | Integrated infrared microlens and gas molecule getter grating in a vacuum package |
| US6499354B1 (en) | 1998-05-04 | 2002-12-31 | Integrated Sensing Systems (Issys), Inc. | Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices |
| US6252229B1 (en) * | 1998-07-10 | 2001-06-26 | Boeing North American, Inc. | Sealed-cavity microstructure and microbolometer and associated fabrication methods |
| US6303986B1 (en) * | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
| US8021976B2 (en) * | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US6521477B1 (en) * | 2000-02-02 | 2003-02-18 | Raytheon Company | Vacuum package fabrication of integrated circuit components |
| US7315115B1 (en) * | 2000-10-27 | 2008-01-01 | Canon Kabushiki Kaisha | Light-emitting and electron-emitting devices having getter regions |
| JP2002299484A (ja) * | 2001-03-29 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 電子部品 |
| US6853076B2 (en) * | 2001-09-21 | 2005-02-08 | Intel Corporation | Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same |
| US6923625B2 (en) | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
| US7276798B2 (en) * | 2002-05-23 | 2007-10-02 | Honeywell International Inc. | Integral topside vacuum package |
| AU2003256360A1 (en) | 2002-06-25 | 2004-01-06 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
| US6988924B2 (en) | 2003-04-14 | 2006-01-24 | Hewlett-Packard Development Company, L.P. | Method of making a getter structure |
| US20050085053A1 (en) * | 2003-10-20 | 2005-04-21 | Chien-Hua Chen | Method of activating a getter structure |
| US7427557B2 (en) * | 2004-03-10 | 2008-09-23 | Unitive International Limited | Methods of forming bumps using barrier layers as etch masks |
| US7952189B2 (en) * | 2004-05-27 | 2011-05-31 | Chang-Feng Wan | Hermetic packaging and method of manufacture and use therefore |
| US7045827B2 (en) * | 2004-06-24 | 2006-05-16 | Gallup Kendra J | Lids for wafer-scale optoelectronic packages |
| US7615833B2 (en) * | 2004-07-13 | 2009-11-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator package and method of fabricating same |
| US7204737B2 (en) * | 2004-09-23 | 2007-04-17 | Temic Automotive Of North America, Inc. | Hermetically sealed microdevice with getter shield |
| KR100656192B1 (ko) | 2004-11-24 | 2006-12-12 | 이병철 | 전면발광형 유기이엘 디스플레이 소자 |
| US7262412B2 (en) * | 2004-12-10 | 2007-08-28 | L-3 Communications Corporation | Optically blocked reference pixels for focal plane arrays |
| FR2883099B1 (fr) * | 2005-03-14 | 2007-04-13 | Commissariat Energie Atomique | Protection d'un getter en couche mince |
| US7442570B2 (en) * | 2005-03-18 | 2008-10-28 | Invensence Inc. | Method of fabrication of a AL/GE bonding in a wafer packaging environment and a product produced therefrom |
| US7789949B2 (en) | 2005-11-23 | 2010-09-07 | Integrated Sensing Systems, Inc. | Getter device |
| US7718965B1 (en) * | 2006-08-03 | 2010-05-18 | L-3 Communications Corporation | Microbolometer infrared detector elements and methods for forming same |
| EP2008966A3 (en) | 2007-06-27 | 2013-06-12 | Sumitomo Precision Products Co., Ltd. | MEMS device formed inside hermetic chamber having getter film |
| KR101014263B1 (ko) * | 2008-09-04 | 2011-02-16 | 삼성전기주식회사 | 촉각 센서 |
| US8343806B2 (en) * | 2009-03-05 | 2013-01-01 | Raytheon Company | Hermetic packaging of integrated circuit components |
| FR2946777B1 (fr) | 2009-06-12 | 2011-07-22 | Commissariat Energie Atomique | Dispositif de detection et/ou d'emission de rayonnement electromagnetique et procede de fabrication d'un tel dispositif |
| FR2950877B1 (fr) | 2009-10-07 | 2012-01-13 | Commissariat Energie Atomique | Structure a cavite comportant une interface de collage a base de materiau getter |
| FR2950876B1 (fr) * | 2009-10-07 | 2012-02-10 | Commissariat Energie Atomique | Procede de traitement d'un materiau getter et procede d'encapsulation d'un tel materiau getter |
| DE102009046687A1 (de) | 2009-11-13 | 2011-05-19 | Robert Bosch Gmbh | Mikromechanisches Verfahren und entsprechende Anordnung zum Bonden von Halbleitersubstraten sowie entsprechender gebondeter Halbleitechip |
| EP2363373A1 (en) * | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Bonding process for sensitive micro-and nano-systems |
| CN102275863B (zh) * | 2010-06-08 | 2013-11-06 | 北京广微积电科技有限公司 | 微机电器件的晶圆级真空封装方法 |
| US8809784B2 (en) | 2010-10-21 | 2014-08-19 | Raytheon Company | Incident radiation detector packaging |
| FR2967150A1 (fr) | 2010-11-09 | 2012-05-11 | Commissariat Energie Atomique | Procédé de réalisation de substrat a couches enfouies de matériau getter |
| US20140175590A1 (en) * | 2012-12-20 | 2014-06-26 | Raytheon Company | Getter structure for wafer level vacuum packaged device |
-
2012
- 2012-10-20 NO NO15158185A patent/NO2944700T3/no unknown
-
2013
- 2013-07-11 US US13/939,400 patent/US9093444B2/en active Active
-
2014
- 2014-07-08 CN CN201811055306.1A patent/CN109231160A/zh active Pending
- 2014-07-08 EP EP14748016.4A patent/EP3019441B1/en active Active
- 2014-07-08 KR KR1020167000627A patent/KR101752107B1/ko active Active
- 2014-07-08 WO PCT/US2014/045756 patent/WO2015006327A1/en not_active Ceased
- 2014-07-08 CA CA2916672A patent/CA2916672C/en active Active
- 2014-07-08 CN CN201480039124.9A patent/CN105358473B/zh active Active
- 2014-07-08 JP JP2016525429A patent/JP6122220B2/ja active Active
-
2015
- 2015-06-10 US US14/736,042 patent/US9520332B2/en active Active
- 2015-12-22 IL IL243086A patent/IL243086A/en active IP Right Grant
-
2016
- 2016-09-20 US US15/270,145 patent/US9966320B2/en active Active
-
2018
- 2018-04-02 US US15/942,911 patent/US10262913B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CA2916672C (en) | 2017-07-18 |
| CN105358473A (zh) | 2016-02-24 |
| KR20160018789A (ko) | 2016-02-17 |
| KR101752107B1 (ko) | 2017-06-28 |
| US20180226309A1 (en) | 2018-08-09 |
| US10262913B2 (en) | 2019-04-16 |
| WO2015006327A1 (en) | 2015-01-15 |
| US9093444B2 (en) | 2015-07-28 |
| CN109231160A (zh) | 2019-01-18 |
| EP3019441A1 (en) | 2016-05-18 |
| CN105358473B (zh) | 2020-02-14 |
| US20150279755A1 (en) | 2015-10-01 |
| JP6122220B2 (ja) | 2017-04-26 |
| IL243086A (en) | 2017-05-29 |
| US9966320B2 (en) | 2018-05-08 |
| US9520332B2 (en) | 2016-12-13 |
| CA2916672A1 (en) | 2015-01-15 |
| EP3019441B1 (en) | 2017-08-23 |
| JP2016531421A (ja) | 2016-10-06 |
| US20150014854A1 (en) | 2015-01-15 |
| US20170011977A1 (en) | 2017-01-12 |