NO2944700T3 - - Google Patents

Info

Publication number
NO2944700T3
NO2944700T3 NO15158185A NO15158185A NO2944700T3 NO 2944700 T3 NO2944700 T3 NO 2944700T3 NO 15158185 A NO15158185 A NO 15158185A NO 15158185 A NO15158185 A NO 15158185A NO 2944700 T3 NO2944700 T3 NO 2944700T3
Authority
NO
Norway
Application number
NO15158185A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NO2944700T3 publication Critical patent/NO2944700T3/no

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032Packages or encapsulation
    • B81B7/0035Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00269Bonding of solid lids or wafers to the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14634Assemblies, i.e. Hybrid structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14636Interconnect structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469Assemblies, i.e. hybrid integration
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0207Bolometers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/03Bonding two components
    • B81C2203/033Thermal bonding
    • B81C2203/035Soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NO15158185A 2013-07-11 2012-10-20 NO2944700T3 (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/939,400 US9093444B2 (en) 2013-07-11 2013-07-11 Wafer level package solder barrier used as vacuum getter

Publications (1)

Publication Number Publication Date
NO2944700T3 true NO2944700T3 (no) 2018-03-17

Family

ID=51293136

Family Applications (1)

Application Number Title Priority Date Filing Date
NO15158185A NO2944700T3 (no) 2013-07-11 2012-10-20

Country Status (9)

Country Link
US (4) US9093444B2 (no)
EP (1) EP3019441B1 (no)
JP (1) JP6122220B2 (no)
KR (1) KR101752107B1 (no)
CN (2) CN109231160A (no)
CA (1) CA2916672C (no)
IL (1) IL243086A (no)
NO (1) NO2944700T3 (no)
WO (1) WO2015006327A1 (no)

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FR3006236B1 (fr) * 2013-06-03 2016-07-29 Commissariat Energie Atomique Procede de collage metallique direct
US9771258B2 (en) 2015-06-24 2017-09-26 Raytheon Company Wafer level MEMS package including dual seal ring
US20170081178A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Semiconductor device package with seal structure
US9570321B1 (en) * 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
US9893027B2 (en) * 2016-04-07 2018-02-13 Nxp Usa, Inc. Pre-plated substrate for die attachment
US9938134B2 (en) * 2016-04-14 2018-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Getter electrode to improve vacuum level in a microelectromechanical systems (MEMS) device
US10115692B2 (en) 2016-09-14 2018-10-30 International Business Machines Corporation Method of forming solder bumps
JP2018054496A (ja) * 2016-09-29 2018-04-05 セイコーインスツル株式会社 パッケージおよび赤外線センサ
KR101952368B1 (ko) * 2016-11-25 2019-02-26 오승래 환자 맞춤형 수술기구
US10457549B2 (en) * 2017-02-03 2019-10-29 Taiwan Semiconductor Manfacturing Company Ltd. Semiconductive structure and manufacturing method thereof
JP7408266B2 (ja) * 2017-06-14 2024-01-05 日亜化学工業株式会社 光源装置
CN109879240B (zh) * 2017-12-06 2021-11-09 有研工程技术研究院有限公司 一种厚膜吸气材料的制备方法
US20190202684A1 (en) 2017-12-29 2019-07-04 Texas Instruments Incorporated Protective bondline control structure
FR3088319B1 (fr) * 2018-11-08 2020-10-30 Ulis Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe
CN110148571B (zh) * 2018-12-10 2022-03-11 上海欧菲尔光电技术有限公司 一种八英寸红外探测器封装窗口及其制备方法
US10968099B2 (en) * 2018-12-28 2021-04-06 Texas Instruments Incorporated Package moisture control and leak mitigation for high vacuum sealed devices
CN111048472B (zh) * 2020-01-07 2021-12-03 深圳南信国际电子有限公司 一种带镀层的红外探测器真空封装结构
JP2021136413A (ja) * 2020-02-28 2021-09-13 国立研究開発法人産業技術総合研究所 封止構造体およびその製造方法
US11670616B2 (en) * 2020-06-22 2023-06-06 Epir, Inc. Modified direct bond interconnect for FPAs
WO2023199375A1 (ja) * 2022-04-11 2023-10-19 三菱電機株式会社 中空パッケージ

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US5111049A (en) * 1990-12-21 1992-05-05 Santa Barbara Research Center Remote fired RF getter for use in metal infrared detector dewar
US5789859A (en) * 1996-11-25 1998-08-04 Micron Display Technology, Inc. Field emission display with non-evaporable getter material
US5701008A (en) * 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package
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US6521477B1 (en) * 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
US7315115B1 (en) * 2000-10-27 2008-01-01 Canon Kabushiki Kaisha Light-emitting and electron-emitting devices having getter regions
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US8343806B2 (en) * 2009-03-05 2013-01-01 Raytheon Company Hermetic packaging of integrated circuit components
FR2946777B1 (fr) 2009-06-12 2011-07-22 Commissariat Energie Atomique Dispositif de detection et/ou d'emission de rayonnement electromagnetique et procede de fabrication d'un tel dispositif
FR2950877B1 (fr) 2009-10-07 2012-01-13 Commissariat Energie Atomique Structure a cavite comportant une interface de collage a base de materiau getter
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US20140175590A1 (en) * 2012-12-20 2014-06-26 Raytheon Company Getter structure for wafer level vacuum packaged device

Also Published As

Publication number Publication date
US9093444B2 (en) 2015-07-28
US9520332B2 (en) 2016-12-13
CA2916672A1 (en) 2015-01-15
KR101752107B1 (ko) 2017-06-28
KR20160018789A (ko) 2016-02-17
US20150014854A1 (en) 2015-01-15
EP3019441A1 (en) 2016-05-18
US20150279755A1 (en) 2015-10-01
CN105358473A (zh) 2016-02-24
CN105358473B (zh) 2020-02-14
IL243086A (en) 2017-05-29
US20180226309A1 (en) 2018-08-09
US20170011977A1 (en) 2017-01-12
CN109231160A (zh) 2019-01-18
EP3019441B1 (en) 2017-08-23
US10262913B2 (en) 2019-04-16
JP6122220B2 (ja) 2017-04-26
WO2015006327A1 (en) 2015-01-15
US9966320B2 (en) 2018-05-08
CA2916672C (en) 2017-07-18
JP2016531421A (ja) 2016-10-06

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