JP6122220B2 - 真空ゲッタとして使用されるウェファレベルのパッケージされた半田バリア - Google Patents

真空ゲッタとして使用されるウェファレベルのパッケージされた半田バリア Download PDF

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Publication number
JP6122220B2
JP6122220B2 JP2016525429A JP2016525429A JP6122220B2 JP 6122220 B2 JP6122220 B2 JP 6122220B2 JP 2016525429 A JP2016525429 A JP 2016525429A JP 2016525429 A JP2016525429 A JP 2016525429A JP 6122220 B2 JP6122220 B2 JP 6122220B2
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Prior art keywords
substrate
seal structure
barrier
layer
cavity
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Japanese (ja)
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JP2016531421A (ja
JP2016531421A5 (https=
Inventor
グーチ，ローランド・ダブリュ
ディープ，ブー・キュー
ケネディ，アダム・エム
ブラック，スティーブン・エイチ
コシャン，トーマス・エイ
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Raytheon Co
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Raytheon Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/48—Fillings including materials for absorbing or reacting with moisture or other undesired substances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0207—Bolometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/035—Soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2016525429A 2013-07-11 2014-07-08 真空ゲッタとして使用されるウェファレベルのパッケージされた半田バリア Active JP6122220B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/939,400 2013-07-11
US13/939,400 US9093444B2 (en) 2013-07-11 2013-07-11 Wafer level package solder barrier used as vacuum getter
PCT/US2014/045756 WO2015006327A1 (en) 2013-07-11 2014-07-08 Wafer level package solder barrier used as vacuum getter

Publications (3)

Publication Number Publication Date
JP2016531421A JP2016531421A (ja) 2016-10-06
JP2016531421A5 JP2016531421A5 (https=) 2017-01-19
JP6122220B2 true JP6122220B2 (ja) 2017-04-26

Family

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JP2016525429A Active JP6122220B2 (ja) 2013-07-11 2014-07-08 真空ゲッタとして使用されるウェファレベルのパッケージされた半田バリア

Country Status (9)

Country Link
US (4) US9093444B2 (https=)
EP (1) EP3019441B1 (https=)
JP (1) JP6122220B2 (https=)
KR (1) KR101752107B1 (https=)
CN (2) CN109231160A (https=)
CA (1) CA2916672C (https=)
IL (1) IL243086A (https=)
NO (1) NO2944700T3 (https=)
WO (1) WO2015006327A1 (https=)

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US20170081178A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Semiconductor device package with seal structure
US9570321B1 (en) * 2015-10-20 2017-02-14 Raytheon Company Use of an external getter to reduce package pressure
US9893027B2 (en) * 2016-04-07 2018-02-13 Nxp Usa, Inc. Pre-plated substrate for die attachment
US9938134B2 (en) * 2016-04-14 2018-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. Getter electrode to improve vacuum level in a microelectromechanical systems (MEMS) device
US10115692B2 (en) 2016-09-14 2018-10-30 International Business Machines Corporation Method of forming solder bumps
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KR101952368B1 (ko) * 2016-11-25 2019-02-26 오승래 환자 맞춤형 수술기구
US10457549B2 (en) * 2017-02-03 2019-10-29 Taiwan Semiconductor Manfacturing Company Ltd. Semiconductive structure and manufacturing method thereof
JP7408266B2 (ja) * 2017-06-14 2024-01-05 日亜化学工業株式会社 光源装置
CN109879240B (zh) * 2017-12-06 2021-11-09 有研工程技术研究院有限公司 一种厚膜吸气材料的制备方法
US20190202684A1 (en) 2017-12-29 2019-07-04 Texas Instruments Incorporated Protective bondline control structure
FR3088319B1 (fr) * 2018-11-08 2020-10-30 Ulis Boitier hermetique comportant un getter, composant optoelectronique ou dispositif mems integrant un tel boitier hermetique et procede de fabrication associe
CN110148571B (zh) * 2018-12-10 2022-03-11 上海欧菲尔光电技术有限公司 一种八英寸红外探测器封装窗口及其制备方法
US10968099B2 (en) * 2018-12-28 2021-04-06 Texas Instruments Incorporated Package moisture control and leak mitigation for high vacuum sealed devices
CN111048472B (zh) * 2020-01-07 2021-12-03 深圳南信国际电子有限公司 一种带镀层的红外探测器真空封装结构
JP2021136413A (ja) * 2020-02-28 2021-09-13 国立研究開発法人産業技術総合研究所 封止構造体およびその製造方法
US11670616B2 (en) * 2020-06-22 2023-06-06 Epir, Inc. Modified direct bond interconnect for FPAs
WO2023199375A1 (ja) * 2022-04-11 2023-10-19 三菱電機株式会社 中空パッケージ
EP4611042A4 (en) * 2022-10-26 2026-01-07 Sony Semiconductor Solutions Corp CASE AND CASE MANUFACTURING PROCESS
WO2025154408A1 (ja) * 2024-01-18 2025-07-24 パナソニックＩｐマネジメント株式会社 赤外線センサ

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Also Published As

Publication number Publication date
CA2916672C (en) 2017-07-18
CN105358473A (zh) 2016-02-24
KR20160018789A (ko) 2016-02-17
NO2944700T3 (https=) 2018-03-17
KR101752107B1 (ko) 2017-06-28
US20180226309A1 (en) 2018-08-09
US10262913B2 (en) 2019-04-16
WO2015006327A1 (en) 2015-01-15
US9093444B2 (en) 2015-07-28
CN109231160A (zh) 2019-01-18
EP3019441A1 (en) 2016-05-18
CN105358473B (zh) 2020-02-14
US20150279755A1 (en) 2015-10-01
IL243086A (en) 2017-05-29
US9966320B2 (en) 2018-05-08
US9520332B2 (en) 2016-12-13
CA2916672A1 (en) 2015-01-15
EP3019441B1 (en) 2017-08-23
JP2016531421A (ja) 2016-10-06
US20150014854A1 (en) 2015-01-15
US20170011977A1 (en) 2017-01-12

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