JP4860695B2 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
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- JP4860695B2 JP4860695B2 JP2008520088A JP2008520088A JP4860695B2 JP 4860695 B2 JP4860695 B2 JP 4860695B2 JP 2008520088 A JP2008520088 A JP 2008520088A JP 2008520088 A JP2008520088 A JP 2008520088A JP 4860695 B2 JP4860695 B2 JP 4860695B2
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- semiconductor device
- heat spreader
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- 239000004065 semiconductor Substances 0.000 title claims description 125
- 229910000679 solder Inorganic materials 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 description 11
- 230000020169 heat generation Effects 0.000 description 11
- 230000008646 thermal stress Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
そこで、半導体デバイスの作動によって発生する熱が繰り返し加えられると、パッケージ基板の熱膨張率とヒートスプレッダの熱膨張率の差によって、パッケージ基板に熱応力が掛かる。そのため、半導体デバイスが作動と停止を交互に繰り返すと、半導体デバイスの接続端子とパッケージ基板の接続端子とを接続するボールグリッドアレイ(BGA)等に過大な負荷が掛かり、その接続が破壊されるおそれがある。
同様に、パッケージ基板の接続端子と、そのパッケージ基板が取り付けられる配線基板の接続端子との接続が破壊されるおそれがある。特に、屋外に設置する機器では、季節によっては機器の内部温度が非常に高温となってしまうため、半導体デバイスの発熱に対する耐久性に優れた半導体パッケージが必須となる。そこで、ヒートスプレッダは、熱伝導性に優れるだけでなく、低い熱膨張率を有していることが望ましい。
一方、本発明による半導体パッケージの一実施例では、パッケージ基板よりも熱膨張率の低い材料、例えばアルミニウムシリコンカーバイド(AlSiC)でヒートスプレッダを構成することにより、パッケージ基板に掛かる熱応力を低減しており、その結果、半導体デバイスの発熱に対する耐久性に優れている。また、本発明による半導体パッケージにおいては、ヒートスプレッダと半導体デバイスを、熱伝導に優れた半田を用いて接合することにより、半導体デバイスで発生した熱の放熱特性を向上させている。そのため、本発明による半導体パッケージは、半導体デバイスの発熱に対する良好な耐久性を有しつつ放熱特性に優れている。
熱サイクル試験(−10℃〜+100℃/300cycle)を実施し、熱応力が5.04MPa以上であると、半田層16が破壊されることが判明した。半田層16の中央から半田層16の角までの各距離に対して半田層に働く熱応力を、半田層16の厚さtを変えて、シミュレーション(熱サイクル−10℃〜+100℃/300cycle)により求めた結果を図2に示す。図2において、横軸は、半導体デバイス13の中央部からの距離を表し、縦軸は、半田層16に加わる熱応力を表す。また、各グラフ201、202、203、及び205は、それぞれ、半田層16の厚さが100μm、200μm、300μm、500μm及び750μmの場合のシミュレーション結果を表す。半田層16が破壊される熱応力5.04MPaは、厚さ300μmの半田層16の最大熱応力に相当するので、余裕をみて半田層16の下限を400μmとした。半田層16の熱抵抗を0.08℃/W以下にするため、半田層16の厚さの上限を460μmとした。従って、本実施形態では、半田層16の厚さを400μmより460μmとした。
Claims (5)
- 半導体デバイスを取り付けるパッケージ基板と、
少なくとも前記半導体デバイスの表面に接合され、前記パッケージ基板の熱膨張係数値以下の熱膨張係数値を有するヒートスプレッダと、
前記ヒートスプレッダの前記半導体デバイスとの接合面に設けられる金属層と、
前記金属層と前記半導体デバイスの間に形成され、前記ヒートスプレッダを前記半導体デバイスに接合する半田層と、を有し、
前記ヒートスプレッダは、アルミニウムシリコンカーバイド又はダイヤモンド複合材で構成され、
前記ヒートスプレッダの接合面の表面粗さは、平均粗さで1.6μm以下であり、
前記金属層は、金又はニッケルで構成され、
前記半田層の厚さは、400μmより460μmである、ことを特徴とする半導体パッケージ。 - 半導体デバイスを取り付けるパッケージ基板と、
前記半導体デバイスと接合され、且つ前記半導体デバイスの周囲で前記パッケージ基板と接着され、アルミニウムシリコンカーバイド又はダイヤモンド複合材で構成されるヒートスプレッダと、
前記ヒートスプレッダの前記半導体デバイスとの接合面に設けられる金属層と、
前記金属層と前記半導体デバイスの間に形成され、前記ヒートスプレッダを前記半導体デバイスに接合する半田層と、を有し、
前記ヒートスプレッダの接合面の表面粗さは、平均粗さで1.6μm以下であり、
前記金属層は、金又はニッケルで構成され、
前記半田層の厚さは、400μmより460μmである、ことを特徴とする半導体パッケージ。 - 前記ヒートスプレッダは、前記半導体デバイスに向かって突出する凸状部を有する、ことを特徴とする請求項1又は2に記載の半導体パッケージ。
- 少なくとも一つの電子回路素子を備えた回路基板と、
半導体デバイスと、
前記回路基板に取り付けられ、前記半導体デバイスを内包する半導体パッケージであって、
前記半導体デバイスを取り付け、前記半導体デバイスが有する接続端子を前記回路基板に設けられた配線と電気的に接続するパッケージ基板と、
少なくとも前記半導体デバイスの表面上に接合され、前記パッケージ基板の熱膨張係数値以下の熱膨張係数値を有するヒートスプレッダと、
前記ヒートスプレッダの前記半導体デバイスとの接合面に設けられる金属層と、
前記金属層と前記半導体デバイスの間に形成され、前記ヒートスプレッダを前記半導体デバイスに接合する半田層とを有する半導体パッケージと、を有し、
前記ヒートスプレッダは、アルミニウムシリコンカーバイド又はダイヤモンド複合材で構成され、
前記ヒートスプレッダの接合面の表面粗さは、平均粗さで1.6μm以下であり、
前記金属層は、金又はニッケルで構成され、
前記半田層の厚さは、400μmより460μmである、ことを特徴とする電子装置。 - 前記ヒートスプレッダは、前記半導体デバイスに向かって突出する凸状部を有する、ことを特徴とする請求項4に記載の電子装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2006/311423 WO2007141851A1 (ja) | 2006-06-07 | 2006-06-07 | 半導体パッケージ及び電子装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007141851A1 JPWO2007141851A1 (ja) | 2009-10-15 |
JP4860695B2 true JP4860695B2 (ja) | 2012-01-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008520088A Expired - Fee Related JP4860695B2 (ja) | 2006-06-07 | 2006-06-07 | 半導体パッケージ |
Country Status (3)
Country | Link |
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US (1) | US20090079062A1 (ja) |
JP (1) | JP4860695B2 (ja) |
WO (1) | WO2007141851A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8049323B2 (en) * | 2007-02-16 | 2011-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chip holder with wafer level redistribution layer |
KR102424402B1 (ko) * | 2015-08-13 | 2022-07-25 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
US20180166356A1 (en) * | 2016-12-13 | 2018-06-14 | Globalfoundries Inc. | Fan-out circuit packaging with integrated lid |
US11756860B2 (en) * | 2019-07-25 | 2023-09-12 | Intel Corporation | Semiconductor device stack-up with bulk substrate material to mitigate hot spots |
Citations (6)
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JPH0382144A (ja) * | 1989-08-25 | 1991-04-08 | Hitachi Ltd | 半導体装置の封止構造 |
JPH10223810A (ja) * | 1997-02-06 | 1998-08-21 | Toyota Motor Corp | 放熱用基板及びその製造方法 |
JP2001102475A (ja) * | 1999-09-29 | 2001-04-13 | Kyocera Corp | 半導体素子用パッケージおよびその実装構造 |
WO2001069674A1 (fr) * | 2000-03-15 | 2001-09-20 | Sumitomo Electric Industries, Ltd. | Substrat de semi-conducteur a base d'aluminium-carbure de silicium et procede de fabrication |
JP2003124411A (ja) * | 2001-10-05 | 2003-04-25 | Samsung Electronics Co Ltd | 半導体パッケージ |
WO2004093187A1 (ja) * | 2003-04-16 | 2004-10-28 | Fujitsu Limited | 電子部品パッケージ、電子部品パッケージ組立体およびプリント基板ユニット |
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US5451629A (en) * | 1985-05-31 | 1995-09-19 | Jacobs; Richard | Fast bonding electrically conductive composition and structures |
JP4623774B2 (ja) * | 1998-01-16 | 2011-02-02 | 住友電気工業株式会社 | ヒートシンクおよびその製造方法 |
WO2002058143A2 (en) * | 2001-01-22 | 2002-07-25 | Morgan Chemical Products, Inc. | Cvd diamond enhanced microprocessor cooling system |
JP2006522491A (ja) * | 2003-04-02 | 2006-09-28 | ハネウエル・インターナシヨナル・インコーポレーテツド | 熱相互接続および界面システム、製造方法、およびその使用方法 |
JP4302607B2 (ja) * | 2004-01-30 | 2009-07-29 | 株式会社デンソー | 半導体装置 |
JP4382547B2 (ja) * | 2004-03-24 | 2009-12-16 | 株式会社アライドマテリアル | 半導体装置用基板と半導体装置 |
US7359487B1 (en) * | 2005-09-15 | 2008-04-15 | Revera Incorporated | Diamond anode |
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2006
- 2006-06-07 JP JP2008520088A patent/JP4860695B2/ja not_active Expired - Fee Related
- 2006-06-07 WO PCT/JP2006/311423 patent/WO2007141851A1/ja active Application Filing
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2008
- 2008-12-01 US US12/325,679 patent/US20090079062A1/en not_active Abandoned
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JPH0382144A (ja) * | 1989-08-25 | 1991-04-08 | Hitachi Ltd | 半導体装置の封止構造 |
JPH10223810A (ja) * | 1997-02-06 | 1998-08-21 | Toyota Motor Corp | 放熱用基板及びその製造方法 |
JP2001102475A (ja) * | 1999-09-29 | 2001-04-13 | Kyocera Corp | 半導体素子用パッケージおよびその実装構造 |
WO2001069674A1 (fr) * | 2000-03-15 | 2001-09-20 | Sumitomo Electric Industries, Ltd. | Substrat de semi-conducteur a base d'aluminium-carbure de silicium et procede de fabrication |
JP2003124411A (ja) * | 2001-10-05 | 2003-04-25 | Samsung Electronics Co Ltd | 半導体パッケージ |
WO2004093187A1 (ja) * | 2003-04-16 | 2004-10-28 | Fujitsu Limited | 電子部品パッケージ、電子部品パッケージ組立体およびプリント基板ユニット |
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US20090079062A1 (en) | 2009-03-26 |
JPWO2007141851A1 (ja) | 2009-10-15 |
WO2007141851A1 (ja) | 2007-12-13 |
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