JP4854994B2 - 配線基板の作製方法及び薄膜トランジスタの作製方法 - Google Patents

配線基板の作製方法及び薄膜トランジスタの作製方法 Download PDF

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Publication number
JP4854994B2
JP4854994B2 JP2005186509A JP2005186509A JP4854994B2 JP 4854994 B2 JP4854994 B2 JP 4854994B2 JP 2005186509 A JP2005186509 A JP 2005186509A JP 2005186509 A JP2005186509 A JP 2005186509A JP 4854994 B2 JP4854994 B2 JP 4854994B2
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light
layer
adhesion
substrate
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JP2005186509A
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Japanese (ja)
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JP2006049847A5 (enExample
JP2006049847A (ja
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裕子 山本
亮 徳丸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2005186509A 2004-06-28 2005-06-27 配線基板の作製方法及び薄膜トランジスタの作製方法 Expired - Fee Related JP4854994B2 (ja)

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JP2005186509A JP4854994B2 (ja) 2004-06-28 2005-06-27 配線基板の作製方法及び薄膜トランジスタの作製方法

Applications Claiming Priority (3)

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JP2004189240 2004-06-28
JP2004189240 2004-06-28
JP2005186509A JP4854994B2 (ja) 2004-06-28 2005-06-27 配線基板の作製方法及び薄膜トランジスタの作製方法

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JP2006049847A JP2006049847A (ja) 2006-02-16
JP2006049847A5 JP2006049847A5 (enExample) 2008-07-17
JP4854994B2 true JP4854994B2 (ja) 2012-01-18

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4755941B2 (ja) * 2006-06-02 2011-08-24 富士フイルム株式会社 デバイスの保護膜形成方法およびデバイス
JP5264016B2 (ja) * 2006-06-30 2013-08-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5314842B2 (ja) * 2006-08-25 2013-10-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5329784B2 (ja) * 2006-08-25 2013-10-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP3595016A1 (en) 2006-10-12 2020-01-15 Cambrios Film Solutions Corporation Nanowire-based transparent conductors and method of making them
KR101340514B1 (ko) * 2007-01-24 2013-12-12 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP2008258333A (ja) * 2007-04-03 2008-10-23 Sharp Corp 薄膜パターンの形成方法およびその利用
KR101563527B1 (ko) * 2008-09-19 2015-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101671544B1 (ko) 2008-11-21 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 기기
JP5382418B2 (ja) * 2009-01-28 2014-01-08 ソニー株式会社 回路基板およびその製造方法、タッチパネルならびに表示装置
KR101847656B1 (ko) * 2009-10-21 2018-05-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP4893839B2 (ja) * 2010-03-29 2012-03-07 住友化学株式会社 発光装置の製造方法
JP5695535B2 (ja) * 2011-09-27 2015-04-08 株式会社東芝 表示装置の製造方法
JP7525775B2 (ja) * 2020-06-05 2024-07-31 日亜化学工業株式会社 金属成膜部材の製造方法、金属成膜部材、波長変換部材、又は、発光装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815242A (ja) * 1981-07-21 1983-01-28 Nec Home Electronics Ltd 半導体装置の製造方法
JPS62108368A (ja) * 1985-11-06 1987-05-19 Canon Inc 複合画像フアイルシステム
JP3679943B2 (ja) * 1999-03-02 2005-08-03 大日本印刷株式会社 パターン形成体の製造方法
JP4360015B2 (ja) * 2000-03-17 2009-11-11 セイコーエプソン株式会社 有機ｅｌ表示体の製造方法、半導体素子の配置方法、半導体装置の製造方法
JP2003318515A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp 膜パターンの形成方法及び膜パターン形成装置、デバイスの製造方法及び製造装置、デバイス及び電子機器
JP4170049B2 (ja) * 2002-08-30 2008-10-22 シャープ株式会社 パターン形成基材およびパターン形成方法

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