JP4847440B2 - ウエハレベルでの光−電子テスト装置および方法 - Google Patents

ウエハレベルでの光−電子テスト装置および方法 Download PDF

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JP4847440B2
JP4847440B2 JP2007502910A JP2007502910A JP4847440B2 JP 4847440 B2 JP4847440 B2 JP 4847440B2 JP 2007502910 A JP2007502910 A JP 2007502910A JP 2007502910 A JP2007502910 A JP 2007502910A JP 4847440 B2 JP4847440 B2 JP 4847440B2
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optical
wafer
electronic
opto
level test
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JP2007528129A (ja
JP2007528129A5 (https=
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ゴートスカー,プラカシュ
ギロン,マーガレット
モンゴメリー,ロバート,キース
パテル,ヴィプルクマー
シャスリ,カルペンドゥ
パサク,ソハム
ピエド,デーヴィッド
ヤヌシェフスキ,キャサリン,エー.
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シオプティカル インコーポレーテッド
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/30Optical coupling means for use between fibre and thin-film device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • G02B6/34Optical coupling means utilising prism or grating
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12107Grating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Optical Integrated Circuits (AREA)
JP2007502910A 2004-03-08 2005-03-08 ウエハレベルでの光−電子テスト装置および方法 Expired - Fee Related JP4847440B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US55131604P 2004-03-08 2004-03-08
US60/551,316 2004-03-08
US11/075,430 US7109739B2 (en) 2004-03-08 2005-03-08 Wafer-level opto-electronic testing apparatus and method
PCT/US2005/007473 WO2005086786A2 (en) 2004-03-08 2005-03-08 Wafer-level opto-electronic testing apparatus and method
US11/075,430 2005-03-08

Publications (3)

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JP2007528129A JP2007528129A (ja) 2007-10-04
JP2007528129A5 JP2007528129A5 (https=) 2008-04-03
JP4847440B2 true JP4847440B2 (ja) 2011-12-28

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JP2007502910A Expired - Fee Related JP4847440B2 (ja) 2004-03-08 2005-03-08 ウエハレベルでの光−電子テスト装置および方法

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US (1) US7109739B2 (https=)
JP (1) JP4847440B2 (https=)
KR (1) KR101141014B1 (https=)
CA (1) CA2558483C (https=)
WO (1) WO2005086786A2 (https=)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7295783B2 (en) * 2001-10-09 2007-11-13 Infinera Corporation Digital optical network architecture
US7184626B1 (en) * 2003-04-07 2007-02-27 Luxtera, Inc Wafer-level testing of optical and optoelectronic chips
US7672558B2 (en) * 2004-01-12 2010-03-02 Honeywell International, Inc. Silicon optical device
US7177489B2 (en) * 2004-03-18 2007-02-13 Honeywell International, Inc. Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture
US7217584B2 (en) * 2004-03-18 2007-05-15 Honeywell International Inc. Bonded thin-film structures for optical modulators and methods of manufacture
US7149388B2 (en) * 2004-03-18 2006-12-12 Honeywell International, Inc. Low loss contact structures for silicon based optical modulators and methods of manufacture
US20050214989A1 (en) * 2004-03-29 2005-09-29 Honeywell International Inc. Silicon optoelectronic device
US7348786B2 (en) * 2004-08-31 2008-03-25 Georgia Tech Research Corporation Probe module for testing chips with electrical and optical input/output interconnects, methods of use, and methods of fabrication
WO2006030723A1 (ja) * 2004-09-13 2006-03-23 Shin-Etsu Handotai Co., Ltd. 半導体ウェーハの評価方法及び半導体ウェーハの評価装置
US20060063679A1 (en) * 2004-09-17 2006-03-23 Honeywell International Inc. Semiconductor-insulator-semiconductor structure for high speed applications
US7538564B2 (en) * 2005-10-18 2009-05-26 Gsi Group Corporation Methods and apparatus for utilizing an optical reference
US20070101927A1 (en) * 2005-11-10 2007-05-10 Honeywell International Inc. Silicon based optical waveguide structures and methods of manufacture
US7362443B2 (en) * 2005-11-17 2008-04-22 Honeywell International Inc. Optical gyro with free space resonator and method for sensing inertial rotation rate
US7514285B2 (en) * 2006-01-17 2009-04-07 Honeywell International Inc. Isolation scheme for reducing film stress in a MEMS device
US7442589B2 (en) * 2006-01-17 2008-10-28 Honeywell International Inc. System and method for uniform multi-plane silicon oxide layer formation for optical applications
US7463360B2 (en) 2006-04-18 2008-12-09 Honeywell International Inc. Optical resonator gyro with integrated external cavity beam generator
US7454102B2 (en) * 2006-04-26 2008-11-18 Honeywell International Inc. Optical coupling structure
US20070274655A1 (en) * 2006-04-26 2007-11-29 Honeywell International Inc. Low-loss optical device structure
US7535576B2 (en) 2006-05-15 2009-05-19 Honeywell International, Inc. Integrated optical rotation sensor and method for sensing rotation rate
EP2009416A1 (en) * 2007-06-29 2008-12-31 Interuniversitair Microelektronica Centrum Vzw Optical probe
KR101334901B1 (ko) * 2007-07-27 2013-12-02 삼성전자주식회사 전기 신호 전달 모듈 및 방법 그리고 전기 신호 전달모듈을 갖는 전기적 검사 장치 및 신호 전달 방법
KR20090053490A (ko) * 2007-11-23 2009-05-27 삼성전자주식회사 광학 전송수단을 구비한 프루브 카드 및 메모리 테스터
DE102008011240B4 (de) * 2008-02-26 2016-11-17 Airbus Ds Electronics And Border Security Gmbh Vorrichtung zur Kontaktierung eines T/R-Moduls mit einer Testeinrichtung
KR101548176B1 (ko) * 2009-02-02 2015-08-31 삼성전자주식회사 메모리 시스템, 메모리 테스트 시스템 및 이의 테스트 방법
US8952717B2 (en) * 2009-02-20 2015-02-10 Qmc Co., Ltd. LED chip testing device
US8248097B2 (en) * 2009-04-02 2012-08-21 International Business Machines Corporation Method and apparatus for probing a wafer
JP5735755B2 (ja) * 2010-05-17 2015-06-17 株式会社アドバンテスト 試験装置及び試験方法
US8654812B2 (en) * 2011-01-25 2014-02-18 Hewlett-Packard Development Company, L.P. Q-switched grating vertical-cavity surface-emitting laser system and method for fabricating the same
US8625942B2 (en) * 2011-03-30 2014-01-07 Intel Corporation Efficient silicon-on-insulator grating coupler
SG10201509875XA (en) 2012-09-12 2016-01-28 Heptagon Micro Optics Pte Ltd Testing of optical devices
US9922887B2 (en) * 2012-12-11 2018-03-20 Acacia Communications, Inc. Wafer-scale testing of photonic integrated circuits using horizontal spot-size converters
KR20140095387A (ko) * 2013-01-24 2014-08-01 삼성전자주식회사 광 소자를 포함하는 웨이퍼의 테스트 시스템 및 웨이퍼 테스트 방법
US9234854B2 (en) 2013-03-15 2016-01-12 International Business Machines Corporation Single fiber noncritical-alignment wafer-scale optical testing
US9397241B2 (en) 2013-12-10 2016-07-19 University Of Ottawa Metal-insulator-semiconductor devices based on surface plasmon polaritons
US9753220B2 (en) 2014-09-02 2017-09-05 Huawei Technologies Co., Ltd. System and method for optical input/output arrays
US9383516B2 (en) * 2014-09-02 2016-07-05 Huawei Technologies Co., Ltd. System and method for optical input/output arrays
CN104362108B (zh) * 2014-09-23 2017-05-24 华进半导体封装先导技术研发中心有限公司 光电测试装置
WO2016085473A1 (en) * 2014-11-25 2016-06-02 Hewlett Packard Enterprise Development Lp Light redirecting test fixture
WO2016201289A1 (en) * 2015-06-10 2016-12-15 Translarity, Inc. Shaping of contact structures for semiconductor test, and associated systems and methods
US10359567B2 (en) 2015-09-21 2019-07-23 Elenion Technologies, Llc Test systems and methods for chips in wafer scale photonic systems
US10132999B2 (en) 2016-06-30 2018-11-20 International Business Machines Corporation Sacrificial grating coupler for testing v-grooved integrated circuits
DE112018004026A5 (de) 2017-08-07 2020-05-28 Jenoptik Optical Systems Gmbh Lagetoleranzunempfindliches kontaktierungsmodul zur kontaktierung optoelektronischer chips
JP6781120B2 (ja) * 2017-08-18 2020-11-04 株式会社日本マイクロニクス 検査装置
CN108152864A (zh) * 2017-12-14 2018-06-12 深圳市帝迈生物技术有限公司 样本试管类型的识别设备及样本试管类型的检测方法
DE102018108283A1 (de) * 2018-04-09 2019-10-10 Carl Zeiss Smt Gmbh Elektro-optische Leiterplatte zur Kontaktierung von photonischen integrierten Schaltungen
US10429582B1 (en) 2018-05-02 2019-10-01 Globalfoundries Inc. Waveguide-to-waveguide couplers with multiple tapers
US10436982B1 (en) 2018-07-18 2019-10-08 Globalfoundries Inc. Waveguide bends with field confinement
JP7107094B2 (ja) 2018-08-23 2022-07-27 富士通オプティカルコンポーネンツ株式会社 光デバイスおよび光送受信モジュール
KR102594414B1 (ko) * 2018-10-24 2023-10-30 삼성전자주식회사 프로브 장치 및 이를 포함하는 테스트 장치
US12072445B2 (en) * 2018-11-27 2024-08-27 Wuhan Vanjee Optoelectronic Technology Co., Ltd. Phased array LiDAR transmitting chip of multi-layer materials, manufacturing method thereof, and LiDAR device
TWI672480B (zh) 2018-12-03 2019-09-21 財團法人工業技術研究院 光學量測裝置與方法
JP7259431B2 (ja) * 2019-03-15 2023-04-18 富士通オプティカルコンポーネンツ株式会社 光デバイス、これを用いた光モジュール、及び光デバイスの試験方法
US11280959B2 (en) * 2019-04-23 2022-03-22 Ayar Labs, Inc. Photonics systems to enable top-side wafer-level optical and electrical test
JP7245721B2 (ja) 2019-05-31 2023-03-24 株式会社アドバンテスト 試験装置、試験方法およびプログラム
US20220357532A1 (en) * 2019-06-17 2022-11-10 Nippon Telegraph And Telephone Corporation Optical Circuit Wafer
WO2021078318A1 (de) * 2019-10-25 2021-04-29 Jenoptik Optical Systems Gmbh Wafer-level-testverfahren für opto-elektronische chips
TWI733226B (zh) * 2019-10-25 2021-07-11 台灣愛司帝科技股份有限公司 發光二極體晶圓以及發光二極體晶圓檢測裝置與方法
US11243230B2 (en) * 2019-12-30 2022-02-08 Juniper Networks, Inc. Compact opto-electric probe
US10955614B1 (en) * 2020-01-14 2021-03-23 Globalfoundries U.S. Inc. Optical fiber coupler structure having manufacturing variation-sensitive transmission blocking region
JP7374937B2 (ja) 2021-01-13 2023-11-07 株式会社アドバンテスト 試験装置、試験方法およびプログラム
JP7386190B2 (ja) 2021-01-21 2023-11-24 株式会社アドバンテスト 試験装置、試験方法およびプログラム
CN112924143B (zh) * 2021-01-29 2023-08-29 中国科学院微电子研究所 一种光子芯片晶圆级测试装置和方法
JP7355773B2 (ja) 2021-02-26 2023-10-03 株式会社アドバンテスト 試験装置、試験方法およびプログラム
US12210057B2 (en) * 2021-04-16 2025-01-28 Jenoptik Optical Systems Gmbh Wafer-level test method for optoelectronic chips
WO2023132785A1 (en) * 2022-01-06 2023-07-13 Compoundtek Pte. Ltd. Apparatus for wafer level testing of semicondcutor device
WO2023243019A1 (ja) * 2022-06-15 2023-12-21 日本電信電話株式会社 光半導体集積回路
US12078674B2 (en) * 2022-09-06 2024-09-03 Ciena Corporation Managing photonic integrated circuit optical coupling
WO2024074782A1 (fr) * 2022-10-06 2024-04-11 Aryballe Systeme de test en serie de puces destinees a l'analyse d'un analyte et elaborees sur des plaques en silicium

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0387705A (ja) * 1989-06-13 1991-04-12 Ricoh Co Ltd 高効率プリズム結合装置及びその作成方法
GB2332775A (en) * 1997-12-23 1999-06-30 Lsi Logic Corp Testing optical/electronic integrated circuits
JP2002098849A (ja) * 2000-09-25 2002-04-05 Nippon Telegr & Teleph Corp <Ntt> 光プローブ
US20030040175A1 (en) * 2001-05-17 2003-02-27 Optronx, Inc. Hybrid active and electronic circuit with evanescent coupling
US20030123793A1 (en) * 2001-12-28 2003-07-03 Kjetil Johannessen Optical probe for wafer testing
WO2003067271A2 (en) * 2002-02-01 2003-08-14 Optonics, Inc. Apparatus and method for dynamic diagnostic testing of integrated circuits
US6686993B1 (en) * 2001-03-05 2004-02-03 Analog Devices, Inc. Probe card for testing optical micro electromechanical system devices at wafer level
US20040190826A1 (en) * 2003-03-31 2004-09-30 Margaret Ghiron Permanent light coupling arrangement and method for use with thin silicon optical waveguides
US20040213518A1 (en) * 2003-04-28 2004-10-28 Margaret Ghiron Arrangements for reducing wavelength sensitivity in prism-coupled SOI-based optical systems
US20050094939A1 (en) * 2003-09-04 2005-05-05 Margaret Ghiron Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling
JP2006522943A (ja) * 2003-04-10 2006-10-05 シオプティカル インコーポレーテッド ビーム成形と、薄いシリコン導波管への外部ソースおよび光学系の嵌合に関連する損失を減らす実用的方法
JP2006525677A (ja) * 2003-04-21 2006-11-09 シオプティカル インコーポレーテッド シリコン・ベースの光デバイスの電子デバイスとのcmos互換集積化

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3777154A (en) * 1972-02-07 1973-12-04 R Lindsey Optical data processing system
US5119452A (en) * 1989-06-13 1992-06-02 Ricoh Company, Ltd. High efficiency prism coupling device and method for producing the same
US6577148B1 (en) * 1994-08-31 2003-06-10 Motorola, Inc. Apparatus, method, and wafer used for testing integrated circuits formed on a product wafer
US5841544A (en) * 1996-12-13 1998-11-24 Lucent Technologies, Inc. Method for positioning optical subassembly for testing
US6337871B1 (en) * 1999-07-15 2002-01-08 University Of Maryland Baltimore County (Umbc) Multiple edge-emitting laser components located on a single wafer and the on-wafer testing of the same
US6788847B2 (en) * 2001-04-05 2004-09-07 Luxtera, Inc. Photonic input/output port
US6731122B2 (en) * 2001-08-14 2004-05-04 International Business Machines Corporation Wafer test apparatus including optical elements and method of using the test apparatus
EP1432546A4 (en) * 2001-08-31 2006-06-07 Cascade Microtech Inc OPTICAL TESTING APPARATUS
US6859587B2 (en) * 2001-12-28 2005-02-22 Intel Corporation Method and apparatus for wafer level testing of integrated optical waveguide circuits
US6925238B2 (en) * 2002-07-16 2005-08-02 Enablence Holdings Llc Method and apparatus for on-wafer testing of an individual optical chip

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0387705A (ja) * 1989-06-13 1991-04-12 Ricoh Co Ltd 高効率プリズム結合装置及びその作成方法
GB2332775A (en) * 1997-12-23 1999-06-30 Lsi Logic Corp Testing optical/electronic integrated circuits
JP2002098849A (ja) * 2000-09-25 2002-04-05 Nippon Telegr & Teleph Corp <Ntt> 光プローブ
US6686993B1 (en) * 2001-03-05 2004-02-03 Analog Devices, Inc. Probe card for testing optical micro electromechanical system devices at wafer level
US20030040175A1 (en) * 2001-05-17 2003-02-27 Optronx, Inc. Hybrid active and electronic circuit with evanescent coupling
US20030123793A1 (en) * 2001-12-28 2003-07-03 Kjetil Johannessen Optical probe for wafer testing
WO2003067271A2 (en) * 2002-02-01 2003-08-14 Optonics, Inc. Apparatus and method for dynamic diagnostic testing of integrated circuits
US20040190826A1 (en) * 2003-03-31 2004-09-30 Margaret Ghiron Permanent light coupling arrangement and method for use with thin silicon optical waveguides
JP2006522943A (ja) * 2003-04-10 2006-10-05 シオプティカル インコーポレーテッド ビーム成形と、薄いシリコン導波管への外部ソースおよび光学系の嵌合に関連する損失を減らす実用的方法
JP2006525677A (ja) * 2003-04-21 2006-11-09 シオプティカル インコーポレーテッド シリコン・ベースの光デバイスの電子デバイスとのcmos互換集積化
US20040213518A1 (en) * 2003-04-28 2004-10-28 Margaret Ghiron Arrangements for reducing wavelength sensitivity in prism-coupled SOI-based optical systems
JP2006526808A (ja) * 2003-04-28 2006-11-24 シオプティカル インコーポレーテッド プリズム結合したsoiベースの光学系で波長感受性を下げるための構成
US20050094939A1 (en) * 2003-09-04 2005-05-05 Margaret Ghiron Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling

Also Published As

Publication number Publication date
CA2558483C (en) 2015-01-06
US20050194990A1 (en) 2005-09-08
CA2558483A1 (en) 2005-09-22
US7109739B2 (en) 2006-09-19
KR101141014B1 (ko) 2012-05-02
JP2007528129A (ja) 2007-10-04
KR20060130679A (ko) 2006-12-19
WO2005086786A3 (en) 2006-06-22
WO2005086786A2 (en) 2005-09-22

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