JP4843221B2 - シリコン基板中のバイアを充填する方法 - Google Patents
シリコン基板中のバイアを充填する方法 Download PDFInfo
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- JP4843221B2 JP4843221B2 JP2005000204A JP2005000204A JP4843221B2 JP 4843221 B2 JP4843221 B2 JP 4843221B2 JP 2005000204 A JP2005000204 A JP 2005000204A JP 2005000204 A JP2005000204 A JP 2005000204A JP 4843221 B2 JP4843221 B2 JP 4843221B2
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- 229910052710 silicon Inorganic materials 0.000 title claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 46
- 239000010703 silicon Substances 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 title claims description 31
- 238000011049 filling Methods 0.000 title claims description 16
- 239000000725 suspension Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000000654 additive Substances 0.000 claims description 28
- 238000005245 sintering Methods 0.000 claims description 28
- 230000000996 additive effect Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 27
- 239000007787 solid Substances 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 5
- 239000006254 rheological additive Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 description 38
- 239000002245 particle Substances 0.000 description 23
- 239000000203 mixture Substances 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 3
- 229910000174 eucryptite Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- -1 corderite Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 229910001947 lithium oxide Inorganic materials 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052611 pyroxene Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Conductive Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
2 閉管バイア
3 シリコン基板
4 スルーバイア
5 閉管バイア
Claims (12)
- シリコン基板中に形成されたバイアを充填する方法であって、
複数のバイアホールを備えたシリコン基板を準備するステップと、
金属粉および前記金属粉の焼結温度よりも高い焼結温度を有するガラス粉の添加剤を含み、50容量パーセントを超える固形分を含有する無結合剤ペーストであって、粘性係数が1000センチポアズ未満の懸濁液の状態にした前記ペーストで前記バイアを充填するステップと、
前記金属粉を焼結させるが前記添加剤は焼結させない温度で前記金属粉を焼結させるステップと
を備えた方法。 - 前記ペーストが前記固形分に対する20〜80容量パーセントの前記添加剤を含有している、請求項1に記載の方法。
- 前記ペーストが前記固形分に対する50〜75容量パーセントの前記添加剤を含有している、請求項2に記載の方法。
- 前記ペーストが前記固形分に対する20〜80容量パーセントの量の前記金属粉を含有している、請求項2に記載の方法。
- 前記金属粉の含有量が前記固形分に対する30〜45容量パーセントである、請求項4に記載の方法。
- さらに、複数のレオロジ改質剤を組み合わせることより前記ペーストにレオロジ上の調製を施して前記バイアの充填性を改善するステップを備えた、請求項1に記載の方法。
- 前記ペーストにレオロジ上の調製を施して前記バイアの充填性を改善するステップが、0.1容量パーセントのレオロジ改質剤を添加することを含む、請求項6に記載の方法。
- 前記金属粉の焼結温度が前記添加剤の焼結温度よりも100℃低い、請求項1に記載の方法。
- シリコン基板に形成された空のバイアを充填する方法であって、
前記基板を真空チャンバ内に配置するステップと、
前記真空チャンバ内を真空に引くステップと、
前記シリコン基板の表面を、金属粉および前記金属粉の焼結温度よりも高い焼結温度を有するガラス粉の添加剤を含む無結合剤ペーストを備え、50容量パーセントを超える固形分を含有し、粘性係数が1000センチポアズ未満である懸濁液の状態にした前記ペーストで溢れさせるステップと、
前記真空チャンバ内の圧力を上昇させるステップと、
過剰な懸濁液材料をぬぐい去るステップと、
前記シリコン基板を乾燥させるステップと、
前記金属粉を焼結させるが前記添加剤は焼結させない温度で前記金属粉を焼結するステップと
を備えた方法。 - 前記金属粉の焼結温度が前記添加剤の焼結温度よりも100℃低い、請求項9に記載の方法。
- シリコン基板中に形成されたバイアホールを充填する懸濁液であって、金属粉および前記金属粉の焼結温度よりも高い焼結温度を有するガラス粉の添加剤を含む無結合剤ペーストを備え、50容量パーセントを超える固形分を含有し、粘性係数が1000センチポアズ未満である懸濁液。
- 前記懸濁液が溶媒および分散剤を含んでいる、請求項11に記載の懸濁液。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/707693 | 2004-01-05 | ||
US10/707,693 US7202154B2 (en) | 2004-01-05 | 2004-01-05 | Suspension for filling via holes in silicon and method for making the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005197733A JP2005197733A (ja) | 2005-07-21 |
JP4843221B2 true JP4843221B2 (ja) | 2011-12-21 |
Family
ID=34710362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005000204A Active JP4843221B2 (ja) | 2004-01-05 | 2005-01-04 | シリコン基板中のバイアを充填する方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7202154B2 (ja) |
JP (1) | JP4843221B2 (ja) |
CN (1) | CN1645560B (ja) |
TW (1) | TWI377651B (ja) |
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JP4270792B2 (ja) * | 2002-01-23 | 2009-06-03 | 富士通株式会社 | 導電性材料及びビアホールの充填方法 |
JP2003257891A (ja) * | 2002-02-27 | 2003-09-12 | Toray Eng Co Ltd | 導電性ペーストの充填方法及び貫通電極付き基板並びに非貫通電極付き基板 |
US7276787B2 (en) * | 2003-12-05 | 2007-10-02 | International Business Machines Corporation | Silicon chip carrier with conductive through-vias and method for fabricating same |
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2004
- 2004-01-05 US US10/707,693 patent/US7202154B2/en not_active Expired - Lifetime
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- 2005-01-03 TW TW094100106A patent/TWI377651B/zh active
- 2005-01-04 JP JP2005000204A patent/JP4843221B2/ja active Active
- 2005-01-04 CN CN2005100000233A patent/CN1645560B/zh active Active
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Also Published As
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US7288474B2 (en) | 2007-10-30 |
US20070032078A1 (en) | 2007-02-08 |
US7202154B2 (en) | 2007-04-10 |
CN1645560A (zh) | 2005-07-27 |
TW200524102A (en) | 2005-07-16 |
US20050148164A1 (en) | 2005-07-07 |
JP2005197733A (ja) | 2005-07-21 |
CN1645560B (zh) | 2010-09-29 |
TWI377651B (en) | 2012-11-21 |
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