JP4831961B2 - 半導体装置の作製方法、選択方法 - Google Patents
半導体装置の作製方法、選択方法 Download PDFInfo
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- JP4831961B2 JP4831961B2 JP2004372794A JP2004372794A JP4831961B2 JP 4831961 B2 JP4831961 B2 JP 4831961B2 JP 2004372794 A JP2004372794 A JP 2004372794A JP 2004372794 A JP2004372794 A JP 2004372794A JP 4831961 B2 JP4831961 B2 JP 4831961B2
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- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
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- 150000003624 transition metals Chemical class 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- Thin Film Transistor (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004372794A JP4831961B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の作製方法、選択方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003432504 | 2003-12-26 | ||
| JP2003432504 | 2003-12-26 | ||
| JP2004372794A JP4831961B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の作製方法、選択方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005210102A JP2005210102A (ja) | 2005-08-04 |
| JP2005210102A5 JP2005210102A5 (enExample) | 2007-12-20 |
| JP4831961B2 true JP4831961B2 (ja) | 2011-12-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004372794A Expired - Fee Related JP4831961B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の作製方法、選択方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4831961B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5255793B2 (ja) * | 2006-07-21 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8034724B2 (en) | 2006-07-21 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5007192B2 (ja) * | 2006-10-06 | 2012-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7811911B2 (en) * | 2006-11-07 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2009280909A (ja) * | 2008-04-25 | 2009-12-03 | Semiconductor Energy Lab Co Ltd | 成膜方法および発光装置の作製方法 |
| US9250178B2 (en) * | 2011-10-07 | 2016-02-02 | Kla-Tencor Corporation | Passivation of nonlinear optical crystals |
| WO2020179056A1 (ja) * | 2019-03-07 | 2020-09-10 | ギガフォトン株式会社 | 半導体結晶薄膜の製造方法、及びレーザアニールシステム |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04296015A (ja) * | 1991-03-25 | 1992-10-20 | G T C:Kk | 半導体装置の製造方法 |
| JP3108375B2 (ja) * | 1997-01-30 | 2000-11-13 | 株式会社自由電子レーザ研究所 | 半導体薄膜及びその製膜方法 |
| US6734387B2 (en) * | 1999-05-27 | 2004-05-11 | Spectra Physics Lasers, Inc. | Method and apparatus for micro-machining of articles that include polymeric materials |
| JP2001077450A (ja) * | 1999-09-07 | 2001-03-23 | Japan Science & Technology Corp | 固体レーザー装置 |
| JP2001184544A (ja) * | 1999-12-24 | 2001-07-06 | Victor Co Of Japan Ltd | 商品管理方法 |
| JP3754857B2 (ja) * | 2000-02-03 | 2006-03-15 | キヤノン株式会社 | レーザ加工方法 |
| JP2001338894A (ja) * | 2000-05-26 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 固体試料のアニール方法および半導体不純物ドーピング層形成方法 |
| JP2002141301A (ja) * | 2000-11-02 | 2002-05-17 | Mitsubishi Electric Corp | レーザアニーリング用光学系とこれを用いたレーザアニーリング装置 |
| JP4137473B2 (ja) * | 2002-03-11 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2004
- 2004-12-24 JP JP2004372794A patent/JP4831961B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2005210102A (ja) | 2005-08-04 |
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