JP4831961B2 - 半導体装置の作製方法、選択方法 - Google Patents

半導体装置の作製方法、選択方法 Download PDF

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Publication number
JP4831961B2
JP4831961B2 JP2004372794A JP2004372794A JP4831961B2 JP 4831961 B2 JP4831961 B2 JP 4831961B2 JP 2004372794 A JP2004372794 A JP 2004372794A JP 2004372794 A JP2004372794 A JP 2004372794A JP 4831961 B2 JP4831961 B2 JP 4831961B2
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Prior art keywords
laser
film
laser beam
substrate
irradiated
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JP2004372794A
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Japanese (ja)
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JP2005210102A5 (enExample
JP2005210102A (ja
Inventor
幸一郎 田中
良明 山本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2004372794A 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法 Expired - Fee Related JP4831961B2 (ja)

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JP2004372794A JP4831961B2 (ja) 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法

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JP2003432504 2003-12-26
JP2003432504 2003-12-26
JP2004372794A JP4831961B2 (ja) 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法

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JP2005210102A JP2005210102A (ja) 2005-08-04
JP2005210102A5 JP2005210102A5 (enExample) 2007-12-20
JP4831961B2 true JP4831961B2 (ja) 2011-12-07

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JP2004372794A Expired - Fee Related JP4831961B2 (ja) 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5255793B2 (ja) * 2006-07-21 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8034724B2 (en) * 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5007192B2 (ja) * 2006-10-06 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5252877B2 (ja) * 2006-11-07 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009280909A (ja) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd 成膜方法および発光装置の作製方法
US9250178B2 (en) * 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
JP7397447B2 (ja) * 2019-03-07 2023-12-13 ギガフォトン株式会社 レーザアニールシステム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04296015A (ja) * 1991-03-25 1992-10-20 G T C:Kk 半導体装置の製造方法
JP3108375B2 (ja) * 1997-01-30 2000-11-13 株式会社自由電子レーザ研究所 半導体薄膜及びその製膜方法
US6734387B2 (en) * 1999-05-27 2004-05-11 Spectra Physics Lasers, Inc. Method and apparatus for micro-machining of articles that include polymeric materials
JP2001077450A (ja) * 1999-09-07 2001-03-23 Japan Science & Technology Corp 固体レーザー装置
JP2001184544A (ja) * 1999-12-24 2001-07-06 Victor Co Of Japan Ltd 商品管理方法
JP3754857B2 (ja) * 2000-02-03 2006-03-15 キヤノン株式会社 レーザ加工方法
JP2001338894A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
JP2002141301A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
JP4137473B2 (ja) * 2002-03-11 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

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