JP2005210102A5 - - Google Patents

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Publication number
JP2005210102A5
JP2005210102A5 JP2004372794A JP2004372794A JP2005210102A5 JP 2005210102 A5 JP2005210102 A5 JP 2005210102A5 JP 2004372794 A JP2004372794 A JP 2004372794A JP 2004372794 A JP2004372794 A JP 2004372794A JP 2005210102 A5 JP2005210102 A5 JP 2005210102A5
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JP
Japan
Prior art keywords
laser beam
glass substrate
pulse width
calculated
manufacturing
Prior art date
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Application number
JP2004372794A
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English (en)
Japanese (ja)
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JP4831961B2 (ja
JP2005210102A (ja
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Application filed filed Critical
Priority to JP2004372794A priority Critical patent/JP4831961B2/ja
Priority claimed from JP2004372794A external-priority patent/JP4831961B2/ja
Publication of JP2005210102A publication Critical patent/JP2005210102A/ja
Publication of JP2005210102A5 publication Critical patent/JP2005210102A5/ja
Application granted granted Critical
Publication of JP4831961B2 publication Critical patent/JP4831961B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004372794A 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法 Expired - Fee Related JP4831961B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004372794A JP4831961B2 (ja) 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003432504 2003-12-26
JP2003432504 2003-12-26
JP2004372794A JP4831961B2 (ja) 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法

Publications (3)

Publication Number Publication Date
JP2005210102A JP2005210102A (ja) 2005-08-04
JP2005210102A5 true JP2005210102A5 (enExample) 2007-12-20
JP4831961B2 JP4831961B2 (ja) 2011-12-07

Family

ID=34914233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004372794A Expired - Fee Related JP4831961B2 (ja) 2003-12-26 2004-12-24 半導体装置の作製方法、選択方法

Country Status (1)

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JP (1) JP4831961B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5255793B2 (ja) * 2006-07-21 2013-08-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8034724B2 (en) 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5007192B2 (ja) * 2006-10-06 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7811911B2 (en) * 2006-11-07 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2009280909A (ja) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd 成膜方法および発光装置の作製方法
US9250178B2 (en) * 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals
WO2020179056A1 (ja) * 2019-03-07 2020-09-10 ギガフォトン株式会社 半導体結晶薄膜の製造方法、及びレーザアニールシステム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04296015A (ja) * 1991-03-25 1992-10-20 G T C:Kk 半導体装置の製造方法
JP3108375B2 (ja) * 1997-01-30 2000-11-13 株式会社自由電子レーザ研究所 半導体薄膜及びその製膜方法
US6734387B2 (en) * 1999-05-27 2004-05-11 Spectra Physics Lasers, Inc. Method and apparatus for micro-machining of articles that include polymeric materials
JP2001077450A (ja) * 1999-09-07 2001-03-23 Japan Science & Technology Corp 固体レーザー装置
JP2001184544A (ja) * 1999-12-24 2001-07-06 Victor Co Of Japan Ltd 商品管理方法
JP3754857B2 (ja) * 2000-02-03 2006-03-15 キヤノン株式会社 レーザ加工方法
JP2001338894A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
JP2002141301A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
JP4137473B2 (ja) * 2002-03-11 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

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