JP2005210102A5 - - Google Patents

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JP2005210102A5
JP2005210102A5 JP2004372794A JP2004372794A JP2005210102A5 JP 2005210102 A5 JP2005210102 A5 JP 2005210102A5 JP 2004372794 A JP2004372794 A JP 2004372794A JP 2004372794 A JP2004372794 A JP 2004372794A JP 2005210102 A5 JP2005210102 A5 JP 2005210102A5
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laser beam
glass substrate
pulse width
calculated
manufacturing
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JP2004372794A
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JP4831961B2 (en
JP2005210102A (en
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ガラス基板上に形成された被照射物にパルス発振されたレーザビームを照射するレーザー照射方法であって、
前記レーザビームのパルス幅をｔ（秒）、前記ガラス基板の屈折率をｎ（単位無し）、前記ガラス基板の厚さをｄ（メートル）、真空中の光速をｃ（メートル／秒）とした場合に、
前記レーザビームのパルス幅であるｔを、ｔ＜２ｎｄ／ｃという式により算出し、
前記レーザビームのパルス幅を前記算出したｔの範囲から選択して前記レーザビームを照射することを特徴とするレーザ照射方法。 The pulse oscillation laser beam in the irradiation object, which is formed on a glass substrate to a laser irradiation method of irradiating,
The pulse width of the laser beam is t (seconds), the refractive index of the glass substrate is n (no unit), the thickness of the glass substrate is d (meters), and the speed of light in vacuum is c (meters / second). In case,
T, which is the pulse width of the laser beam, is calculated by the equation t <2nd / c,
A laser irradiation method comprising: irradiating the laser beam by selecting a pulse width of the laser beam from the calculated range of t . ガラス基板上に形成された被照射物にパルス発振されたレーザビームを照射するレーザー照射方法であって、
前記レーザビームのパルス幅をｔ（秒）、前記ガラス基板の屈折率をｎ（単位無し）、前記ガラス基板の厚さをｄ（メートル）、真空中の光速をｃ（メートル／秒）とした場合に、
前記レーザビームのパルス幅であるｔを、ｔ＜４ｎｄ／ｃという式により算出し、
前記レーザビームのパルス幅を前記算出したｔの範囲から選択して前記レーザビームを照射することを特徴とするレーザ照射方法。 The pulse oscillation laser beam in the irradiation object, which is formed on a glass substrate to a laser irradiation method of irradiating,
The pulse width of the laser beam is t (seconds), the refractive index of the glass substrate is n (no unit), the thickness of the glass substrate is d (meters), and the speed of light in vacuum is c (meters / second). In case,
T, which is the pulse width of the laser beam, is calculated by the equation t <4nd / c,
A laser irradiation method comprising: irradiating the laser beam by selecting a pulse width of the laser beam from the calculated range of t . ガラス基板上に形成された被照射物にパルス発振されたエネルギー揺らぎを有するレーザビームを照射するレーザー照射方法であって、A laser irradiation method for irradiating an irradiation object formed on a glass substrate with a laser beam having pulsed energy fluctuation,
前記レーザビームのパルス幅をｔ（秒）、前記ガラス基板の屈折率をｎ（単位無し）、前記ガラス基板の厚さをｄ（メートル）、真空中の光速をｃ（メートル／秒）、前記エネルギー揺らぎの低減率をＸ（パーセント）とした場合に、The pulse width of the laser beam is t (second), the refractive index of the glass substrate is n (no unit), the thickness of the glass substrate is d (meter), the speed of light in vacuum is c (meter / second), When the reduction rate of energy fluctuation is X (percent),
前記レーザビームのパルス幅であるｔを、ｔ＜２００ｎｄ／（ｃ（１００−Ｘ））という式により算出し、T, which is the pulse width of the laser beam, is calculated by the equation t <200nd / (c (100−X)),
前記レーザビームのパルス幅を前記算出したｔの範囲から選択して前記レーザビームを照射することによって、前記エネルギー揺らぎをＸ（パーセント）以下に低減させることを特徴とするレーザ照射方法。A laser irradiation method characterized by reducing the energy fluctuation to X (percent) or less by selecting the pulse width of the laser beam from the calculated range of t and irradiating the laser beam. 請求項１乃至請求項３のいずれか一項において、In any one of Claims 1 thru | or 3,
前記レーザビームを前記被照射物に対して垂直方向に入射しながら、前記被照射物に前記レーザビームを照射することを特徴とするレーザ照射方法。A laser irradiation method, comprising: irradiating the irradiated object with the laser beam while the laser beam is incident on the irradiated object in a direction perpendicular to the irradiated object. 請求項１乃至請求項４のいずれか一項において、In any one of Claims 1 thru | or 4,
前記ガラス基板には、ゆがみ又は凹凸が存在することを特徴とするレーザ照射方法。A laser irradiation method, wherein the glass substrate has distortion or unevenness. 請求項１乃至請求項５のいずれか一項において、In any one of Claims 1 thru | or 5,
前記真空中の光速であるｃは、３×１０The light speed c in the vacuum is 3 × 10. ８8 （メートル／秒）であることを特徴とするレーザ照射方法。(Meter / second) The laser irradiation method characterized by the above-mentioned. ガラス基板上に形成された半導体膜にパルス発振されたレーザビームを照射する半導体装置の作製方法であって、A method for manufacturing a semiconductor device in which a semiconductor film formed over a glass substrate is irradiated with a pulsed laser beam,
前記レーザビームのパルス幅をｔ（秒）、前記ガラス基板の屈折率をｎ（単位無し）、前記ガラス基板の厚さをｄ（メートル）、真空中の光速をｃ（メートル／秒）とした場合に、The pulse width of the laser beam is t (seconds), the refractive index of the glass substrate is n (no unit), the thickness of the glass substrate is d (meters), and the speed of light in vacuum is c (meters / second). In case,
前記レーザビームのパルス幅であるｔを、ｔ＜２ｎｄ／ｃという式により算出し、T, which is the pulse width of the laser beam, is calculated by the equation t <2nd / c,
前記レーザビームのパルス幅を前記算出したｔの範囲から選択して前記レーザビームを照射することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the laser beam is irradiated by selecting a pulse width of the laser beam from the calculated range of t. ガラス基板上に形成された半導体膜にパルス発振されたレーザビームを照射する半導体装置の作製方法であって、A method for manufacturing a semiconductor device in which a semiconductor film formed over a glass substrate is irradiated with a pulsed laser beam,
前記レーザビームのパルス幅をｔ（秒）、前記ガラス基板の屈折率をｎ（単位無し）、前記ガラス基板の厚さをｄ（メートル）、真空中の光速をｃ（メートル／秒）とした場合に、The pulse width of the laser beam is t (seconds), the refractive index of the glass substrate is n (no unit), the thickness of the glass substrate is d (meters), and the speed of light in vacuum is c (meters / second). In case,
前記レーザビームのパルス幅であるｔを、ｔ＜４ｎｄ／ｃという式により算出し、T, which is the pulse width of the laser beam, is calculated by the equation t <4nd / c,
前記レーザビームのパルス幅を前記算出したｔの範囲から選択して前記レーザビームを照射することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the laser beam is irradiated by selecting a pulse width of the laser beam from the calculated range of t. ガラス基板上に形成された半導体膜にパルス発振されたレーザビームを照射する半導体装置の作製方法であって、A method for manufacturing a semiconductor device in which a semiconductor film formed over a glass substrate is irradiated with a pulsed laser beam,
前記レーザビームのパルス幅をｔ（秒）、前記ガラス基板の屈折率をｎ（単位無し）、前記ガラス基板の厚さをｄ（メートル）、真空中の光速をｃ（メートル／秒）、前記エネルギー揺らぎの低減率をＸ（パーセント）とした場合に、The pulse width of the laser beam is t (second), the refractive index of the glass substrate is n (no unit), the thickness of the glass substrate is d (meter), the speed of light in vacuum is c (meter / second), When the reduction rate of energy fluctuation is X (percent),
前記レーザビームのパルス幅であるｔを、ｔ＜２００ｎｄ／（ｃ（１００−Ｘ））という式により算出し、T, which is the pulse width of the laser beam, is calculated by the equation t <200nd / (c (100−X)),
前記レーザビームのパルス幅を前記算出したｔの範囲から選択して前記レーザビームを照射することによって、前記エネルギー揺らぎをＸ（パーセント）以下に低減させることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the energy fluctuation is reduced to X (percent) or less by selecting the pulse width of the laser beam from the calculated range of t and irradiating the laser beam. 請求項７乃至請求項９のいずれか一項において、In any one of Claims 7 to 9,
前記レーザビームを前記半導体膜に対して垂直方向に入射しながら、前記半導体膜に前記レーザビームを照射することを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, wherein the semiconductor film is irradiated with the laser beam while the laser beam is incident in a direction perpendicular to the semiconductor film. 請求項７乃至請求項１０のいずれか一項において、In any one of Claims 7 to 10,
前記ガラス基板には、ゆがみ又は凹凸が存在することを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the glass substrate has distortion or unevenness. 請求項７乃至請求項１１のいずれか一項において、In any one of Claims 7 to 11,
前記真空中の光速であるｃは、３×１０The light speed c in the vacuum is 3 × 10. ８8 （メートル／秒）であることを特徴とする半導体装置の作製方法。(Meter / second) A method for manufacturing a semiconductor device.




JP2004372794A 2003-12-26 2004-12-24 Manufacturing method and selection method of semiconductor device Expired - Fee Related JP4831961B2 (en)

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JP2005210102A5 true JP2005210102A5 (en) 2007-12-20
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US8034724B2 (en) * 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5255793B2 (en) * 2006-07-21 2013-08-07 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP5007192B2 (en) * 2006-10-06 2012-08-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7811911B2 (en) * 2006-11-07 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2009280909A (en) * 2008-04-25 2009-12-03 Semiconductor Energy Lab Co Ltd Film forming method and method of preparing light emitting device
US9250178B2 (en) * 2011-10-07 2016-02-02 Kla-Tencor Corporation Passivation of nonlinear optical crystals

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JPH04296015A (en) * 1991-03-25 1992-10-20 G T C:Kk Manufacture of semiconductor device
JP3108375B2 (en) * 1997-01-30 2000-11-13 株式会社自由電子レーザ研究所 Semiconductor thin film and method for forming the same
US6734387B2 (en) * 1999-05-27 2004-05-11 Spectra Physics Lasers, Inc. Method and apparatus for micro-machining of articles that include polymeric materials
JP2001077450A (en) * 1999-09-07 2001-03-23 Japan Science & Technology Corp Solid-state laser
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JP2001338894A (en) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd Method for annealing solid state sample and method for forming semiconductor doped layer
JP2002141301A (en) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp Optical system for laser annealing and laser annealing apparatus using the same
JP4137473B2 (en) * 2002-03-11 2008-08-20 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

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