JP4814487B2 - 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法 - Google Patents

絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法 Download PDF

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JP4814487B2
JP4814487B2 JP2003513046A JP2003513046A JP4814487B2 JP 4814487 B2 JP4814487 B2 JP 4814487B2 JP 2003513046 A JP2003513046 A JP 2003513046A JP 2003513046 A JP2003513046 A JP 2003513046A JP 4814487 B2 JP4814487 B2 JP 4814487B2
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electrode
insulating layer
face
single electron
electron transistor
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ブラウシュー，ルイス・シー，ザ・サード
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ノース・キャロライナ・ステイト・ユニヴァーシティ
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2003513046A 2001-07-13 2002-07-12 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法 Expired - Fee Related JP4814487B2 (ja)

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Application Number Priority Date Filing Date Title
US09/905,319 2001-07-13
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
PCT/US2002/022137 WO2003007384A2 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods

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JP2005526371A JP2005526371A (ja) 2005-09-02
JP2005526371A5 JP2005526371A5 (https=) 2010-02-12
JP4814487B2 true JP4814487B2 (ja) 2011-11-16

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US (2) US6483125B1 (https=)
EP (1) EP1407492B1 (https=)
JP (1) JP4814487B2 (https=)
AT (1) ATE468611T1 (https=)
AU (1) AU2002322459A1 (https=)
DE (1) DE60236436D1 (https=)
TW (1) TW557546B (https=)
WO (1) WO2003007384A2 (https=)

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US7309650B1 (en) 2005-02-24 2007-12-18 Spansion Llc Memory device having a nanocrystal charge storage region and method
US7378310B1 (en) 2005-04-27 2008-05-27 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
US7335594B1 (en) 2005-04-27 2008-02-26 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
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US20070202648A1 (en) * 2006-02-28 2007-08-30 Samsung Electronics Co. Ltd. Memory device and method of manufacturing the same
CN101965631B (zh) * 2008-02-11 2012-12-05 库克有限公司 电子或空穴自旋的控制和读出
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CN113985017A (zh) 2016-01-14 2022-01-28 罗斯韦尔生物技术股份有限公司 分子传感器及相关方法
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KR102763291B1 (ko) 2016-01-28 2025-02-04 로스웰 엠이 아이엔씨. 대량 병렬 ｄｎａ 시퀀싱 장치
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CN110431148A (zh) 2017-01-10 2019-11-08 罗斯威尔生命技术公司 用于dna数据存储的方法和系统
CA3052140A1 (en) 2017-01-19 2018-07-26 Roswell Biotechnologies, Inc. Solid state sequencing devices comprising two dimensional layer materials
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EP3622086A4 (en) 2017-05-09 2021-04-21 Roswell Biotechnologies, Inc BINDING PROBE CIRCUITS FOR MOLECULAR SENSORS
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Also Published As

Publication number Publication date
US6784082B2 (en) 2004-08-31
WO2003007384A2 (en) 2003-01-23
EP1407492B1 (en) 2010-05-19
ATE468611T1 (de) 2010-06-15
TW557546B (en) 2003-10-11
WO2003007384A3 (en) 2003-05-08
US20030025133A1 (en) 2003-02-06
EP1407492A2 (en) 2004-04-14
DE60236436D1 (de) 2010-07-01
AU2002322459A1 (en) 2003-01-29
US6483125B1 (en) 2002-11-19
JP2005526371A (ja) 2005-09-02

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