JP2005526371A5 - - Google Patents

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Publication number
JP2005526371A5
JP2005526371A5 JP2003513046A JP2003513046A JP2005526371A5 JP 2005526371 A5 JP2005526371 A5 JP 2005526371A5 JP 2003513046 A JP2003513046 A JP 2003513046A JP 2003513046 A JP2003513046 A JP 2003513046A JP 2005526371 A5 JP2005526371 A5 JP 2005526371A5
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JP
Japan
Prior art keywords
electrode
insulating layer
electron transistor
face
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003513046A
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English (en)
Japanese (ja)
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JP2005526371A (ja
JP4814487B2 (ja
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Publication date
Priority claimed from US09/905,319 external-priority patent/US6483125B1/en
Application filed filed Critical
Publication of JP2005526371A publication Critical patent/JP2005526371A/ja
Publication of JP2005526371A5 publication Critical patent/JP2005526371A5/ja
Application granted granted Critical
Publication of JP4814487B2 publication Critical patent/JP4814487B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003513046A 2001-07-13 2002-07-12 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法 Expired - Fee Related JP4814487B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/905,319 2001-07-13
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
PCT/US2002/022137 WO2003007384A2 (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods

Publications (3)

Publication Number Publication Date
JP2005526371A JP2005526371A (ja) 2005-09-02
JP2005526371A5 true JP2005526371A5 (https=) 2010-02-12
JP4814487B2 JP4814487B2 (ja) 2011-11-16

Family

ID=25420626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003513046A Expired - Fee Related JP4814487B2 (ja) 2001-07-13 2002-07-12 絶縁層の厚さが電極間の間隔を形成する単一電子トランジスタ及び製造方法

Country Status (8)

Country Link
US (2) US6483125B1 (https=)
EP (1) EP1407492B1 (https=)
JP (1) JP4814487B2 (https=)
AT (1) ATE468611T1 (https=)
AU (1) AU2002322459A1 (https=)
DE (1) DE60236436D1 (https=)
TW (1) TW557546B (https=)
WO (1) WO2003007384A2 (https=)

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US10737263B2 (en) 2016-02-09 2020-08-11 Roswell Biotechnologies, Inc. Electronic label-free DNA and genome sequencing
US10597767B2 (en) 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US9829456B1 (en) 2016-07-26 2017-11-28 Roswell Biotechnologies, Inc. Method of making a multi-electrode structure usable in molecular sensing devices
WO2018132457A1 (en) 2017-01-10 2018-07-19 Roswell Biotechnologies, Inc. Methods and systems for dna data storage
CN110520517A (zh) 2017-01-19 2019-11-29 罗斯威尔生命技术公司 包括二维层材料的固态测序装置
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
KR102879682B1 (ko) 2017-04-25 2025-10-30 로스웰 엠이 아이엔씨. 분자 센서들을 위한 효소 회로들
CA3057155A1 (en) 2017-05-09 2018-11-15 Roswell Biotechnologies, Inc. Binding probe circuits for molecular sensors
EP3676389A4 (en) 2017-08-30 2021-06-02 Roswell Biotechnologies, Inc PROCESSIVE ENZYMATIC MOLECULAR ELECTRONIC SENSORS FOR STORING DNA DATA
EP3694990A4 (en) 2017-10-10 2022-06-15 Roswell Biotechnologies, Inc. METHODS, DEVICE AND SYSTEMS FOR AMPLIFICATION-FREE DNA DATA STORAGE
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