TW557546B - Single-electron transistors and fabrication methods in which the thickness of an insulating layer defines spacing between electrodes - Google Patents

Single-electron transistors and fabrication methods in which the thickness of an insulating layer defines spacing between electrodes Download PDF

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Publication number
TW557546B
TW557546B TW091115527A TW91115527A TW557546B TW 557546 B TW557546 B TW 557546B TW 091115527 A TW091115527 A TW 091115527A TW 91115527 A TW91115527 A TW 91115527A TW 557546 B TW557546 B TW 557546B
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TW
Taiwan
Prior art keywords
electrode
insulating layer
nanoparticle
scope
patent application
Prior art date
Application number
TW091115527A
Other languages
English (en)
Chinese (zh)
Inventor
Louis C Brousseau Iii
Original Assignee
Univ North Carolina State
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Application granted granted Critical
Publication of TW557546B publication Critical patent/TW557546B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4146—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS involving nanosized elements, e.g. nanotubes, nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW091115527A 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods in which the thickness of an insulating layer defines spacing between electrodes TW557546B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/905,319 US6483125B1 (en) 2001-07-13 2001-07-13 Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes

Publications (1)

Publication Number Publication Date
TW557546B true TW557546B (en) 2003-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW091115527A TW557546B (en) 2001-07-13 2002-07-12 Single-electron transistors and fabrication methods in which the thickness of an insulating layer defines spacing between electrodes

Country Status (8)

Country Link
US (2) US6483125B1 (https=)
EP (1) EP1407492B1 (https=)
JP (1) JP4814487B2 (https=)
AT (1) ATE468611T1 (https=)
AU (1) AU2002322459A1 (https=)
DE (1) DE60236436D1 (https=)
TW (1) TW557546B (https=)
WO (1) WO2003007384A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI914058B (zh) 2022-06-20 2026-02-01 日商鎧俠股份有限公司 半導體裝置

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9724642D0 (en) * 1997-11-21 1998-01-21 British Tech Group Single electron devices
US6653653B2 (en) * 2001-07-13 2003-11-25 Quantum Logic Devices, Inc. Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes
TW531890B (en) * 2002-02-27 2003-05-11 Ind Tech Res Inst Single electron device fabricated from nanoparticle derivatives
AU2003247950A1 (en) * 2002-07-08 2004-01-23 The Regents Of The University Of California Surface nanopatterning
US7224039B1 (en) 2003-09-09 2007-05-29 International Technology Center Polymer nanocomposite structures for integrated circuits
US8070988B2 (en) * 2003-09-09 2011-12-06 International Technology Center Nano-carbon hybrid structures
MXPA06005558A (es) 2003-11-20 2006-12-15 Biowarn Llc Metodologia y aparato para la deteccion de sustancias biologicas.
KR100671813B1 (ko) * 2004-10-15 2007-01-19 세이코 엡슨 가부시키가이샤 박막 패턴 형성 방법, 반도체 장치, 전기 광학 장치, 및전자 기기
JP4297106B2 (ja) * 2005-02-23 2009-07-15 セイコーエプソン株式会社 膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
US7309650B1 (en) 2005-02-24 2007-12-18 Spansion Llc Memory device having a nanocrystal charge storage region and method
US7378310B1 (en) 2005-04-27 2008-05-27 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
US7335594B1 (en) 2005-04-27 2008-02-26 Spansion Llc Method for manufacturing a memory device having a nanocrystal charge storage region
JP4613314B2 (ja) * 2005-05-26 2011-01-19 独立行政法人産業技術総合研究所 単結晶の製造方法
US20070202648A1 (en) * 2006-02-28 2007-08-30 Samsung Electronics Co. Ltd. Memory device and method of manufacturing the same
CN101965631B (zh) * 2008-02-11 2012-12-05 库克有限公司 电子或空穴自旋的控制和读出
JP5712129B2 (ja) * 2008-09-02 2015-05-07 ザ ガバニング カウンシル オブ ザ ユニバーシティ オブ トロント ナノ構造化微小電極およびそれを組み込んだバイオセンシング装置
KR102713216B1 (ko) 2015-06-25 2024-10-02 로스웰 엠이 아이엔씨. 바이오분자 센서들 및 방법들
CN113985017A (zh) 2016-01-14 2022-01-28 罗斯韦尔生物技术股份有限公司 分子传感器及相关方法
CN109071212A (zh) 2016-01-28 2018-12-21 罗斯韦尔生物技术股份有限公司 使用大规模分子电子传感器阵列测量分析物的方法和装置
KR102763291B1 (ko) 2016-01-28 2025-02-04 로스웰 엠이 아이엔씨. 대량 병렬 ｄｎａ 시퀀싱 장치
CA3053103A1 (en) 2016-02-09 2017-08-17 Roswell Biotechnologies, Inc. Electronic label-free dna and genome sequencing
US10597767B2 (en) 2016-02-22 2020-03-24 Roswell Biotechnologies, Inc. Nanoparticle fabrication
US9829456B1 (en) 2016-07-26 2017-11-28 Roswell Biotechnologies, Inc. Method of making a multi-electrode structure usable in molecular sensing devices
CN110431148A (zh) 2017-01-10 2019-11-08 罗斯威尔生命技术公司 用于dna数据存储的方法和系统
CA3052140A1 (en) 2017-01-19 2018-07-26 Roswell Biotechnologies, Inc. Solid state sequencing devices comprising two dimensional layer materials
EP3615685B1 (en) 2017-04-25 2025-02-19 Roswell Biotechnologies, Inc Enzymatic circuits for molecular sensors
US10508296B2 (en) 2017-04-25 2019-12-17 Roswell Biotechnologies, Inc. Enzymatic circuits for molecular sensors
EP3622086A4 (en) 2017-05-09 2021-04-21 Roswell Biotechnologies, Inc BINDING PROBE CIRCUITS FOR MOLECULAR SENSORS
CN111373049A (zh) 2017-08-30 2020-07-03 罗斯威尔生命技术公司 用于dna数据存储的进行性酶分子电子传感器
EP3694990A4 (en) 2017-10-10 2022-06-15 Roswell Biotechnologies, Inc. METHODS, DEVICE AND SYSTEMS FOR AMPLIFICATION-FREE DNA DATA STORAGE
EP3953491B8 (en) 2019-04-12 2025-09-10 Roswell Biotechnologies Inc. Polycyclic aromatic bridges for molecular electronic sensors
US12146852B2 (en) 2019-09-06 2024-11-19 Roswell Biotechnologies, Inc. Methods of fabricating nanoscale structures usable in molecular sensors and other devices

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8406955D0 (en) 1984-03-16 1984-04-18 Serono Diagnostics Ltd Assay
DE3513168A1 (de) 1985-04-12 1986-10-16 Thomas 8000 München Dandekar Biosensor bestehend aus einem halbleiter auf silizium oder kohlenstoffbasis (elektronischer teil) und nukleinbasen (od. anderen biol. monomeren)
US4894339A (en) 1985-12-18 1990-01-16 Seitaikinouriyou Kagakuhin Sinseizogijutsu Kenkyu Kumiai Immobilized enzyme membrane for a semiconductor sensor
JPS6350745A (ja) 1986-08-20 1988-03-03 Fuji Photo Film Co Ltd 化学センサ−
DE3827314C1 (https=) 1988-08-11 1989-10-19 Christoff Prof. Dr. Braeuchle
US5219577A (en) 1990-06-22 1993-06-15 The Regents Of The University Of California Biologically active composition having a nanocrystalline core
AU2907092A (en) 1991-10-21 1993-05-21 James W. Holm-Kennedy Method and device for biochemical sensing
US5846708A (en) 1991-11-19 1998-12-08 Massachusetts Institiute Of Technology Optical and electrical methods and apparatus for molecule detection
US5405454A (en) * 1992-03-19 1995-04-11 Matsushita Electric Industrial Co., Ltd. Electrically insulated silicon structure and producing method therefor
US5420746A (en) 1993-04-13 1995-05-30 The United States Of America As Represented By The Secretary Of The Army Single electron device including clusters of pure carbon atoms
DE59502654D1 (de) * 1994-04-19 1998-07-30 Siemens Ag Mikroelektronisches bauelement und verfahren zu dessen herstellung
JPH0878669A (ja) * 1994-09-02 1996-03-22 Hitachi Ltd 半導体装置および半導体装置の製造方法
JP3149718B2 (ja) 1995-02-03 2001-03-26 松下電器産業株式会社 単電子トランジスタ
US5576563A (en) 1995-04-24 1996-11-19 Motorola Inc. Chemical probe field effect transistor for measuring the surface potential of a gate electrode in response to chemical exposure
DE19522351A1 (de) * 1995-06-20 1997-01-09 Max Planck Gesellschaft Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen
US6057556A (en) 1996-03-26 2000-05-02 Samsung Electronics Co., Ltd. Tunneling device and method of producing a tunneling device
DE19621994C1 (de) 1996-05-31 1997-06-12 Siemens Ag Einzelelektron-Speicherzellenanordnung
US6066265A (en) 1996-06-19 2000-05-23 Kionix, Inc. Micromachined silicon probe for scanning probe microscopy
US5747839A (en) 1996-09-30 1998-05-05 Motorola, Inc. Chemical sensing trench field effect transistor
US5922537A (en) 1996-11-08 1999-07-13 N.o slashed.AB Immunoassay, Inc. Nanoparticles biosensor
US6103868A (en) 1996-12-27 2000-08-15 The Regents Of The University Of California Organically-functionalized monodisperse nanocrystals of metals
EP0865078A1 (en) 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
US5900728A (en) 1997-03-20 1999-05-04 International Business Machines Corporation Alternating current magnetic force microscopy system with probe having integrated coil
US5900729A (en) 1997-03-20 1999-05-04 International Business Machines Corporation Magnetic force microscopy probe with integrated coil
US6159620A (en) 1997-03-31 2000-12-12 The Regents Of The University Of California Single-electron solid state electronic device
EP0881691B1 (en) 1997-05-30 2004-09-01 Matsushita Electric Industrial Co., Ltd. Quantum dot device
KR100223807B1 (ko) * 1997-06-04 1999-10-15 구본준 반도체 소자의 제조방법
JP3452764B2 (ja) * 1997-06-11 2003-09-29 科学技術振興事業団 超微細突起構造体の製造方法
US5892252A (en) 1998-02-05 1999-04-06 Motorola, Inc. Chemical sensing trench field effect transistor and method for same
CA2329859A1 (en) 1998-04-20 1999-12-02 Allen C. Templeton Nanometer particles containing a reactive monolayer
US6211530B1 (en) * 1998-06-12 2001-04-03 Motorola, Inc. Sparse-carrier devices and method of fabrication
US6218175B1 (en) * 1998-10-30 2001-04-17 International Business Machines Corporation Nano-devices using block-copolymers
JP2000349275A (ja) * 1999-06-01 2000-12-15 Nec Corp 単一電子素子とその製造方法
JP2003507889A (ja) * 1999-08-18 2003-02-25 ノース・キャロライナ・ステイト・ユニヴァーシティ 化学的にゲート動作する単一電子トランジスタを使用したセンシングデバイス
US6410934B1 (en) * 2001-02-09 2002-06-25 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle electronic switches

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI914058B (zh) 2022-06-20 2026-02-01 日商鎧俠股份有限公司 半導體裝置

Also Published As

Publication number Publication date
US6784082B2 (en) 2004-08-31
WO2003007384A2 (en) 2003-01-23
EP1407492B1 (en) 2010-05-19
JP4814487B2 (ja) 2011-11-16
ATE468611T1 (de) 2010-06-15
WO2003007384A3 (en) 2003-05-08
US20030025133A1 (en) 2003-02-06
EP1407492A2 (en) 2004-04-14
DE60236436D1 (de) 2010-07-01
AU2002322459A1 (en) 2003-01-29
US6483125B1 (en) 2002-11-19
JP2005526371A (ja) 2005-09-02

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