JP4814259B2 - プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法 - Google Patents

プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法 Download PDF

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JP4814259B2
JP4814259B2 JP2007555173A JP2007555173A JP4814259B2 JP 4814259 B2 JP4814259 B2 JP 4814259B2 JP 2007555173 A JP2007555173 A JP 2007555173A JP 2007555173 A JP2007555173 A JP 2007555173A JP 4814259 B2 JP4814259 B2 JP 4814259B2
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gas
zone
distribution member
gas flow
zones
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JP2008537628A (ja
JP2008537628A5 (https=
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ロバート， ジェイ． シュテーガー，
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49764—Method of mechanical manufacture with testing or indicating
    • Y10T29/49771—Quantitative measuring or gauging

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Chemical Vapour Deposition (AREA)
JP2007555173A 2005-02-15 2006-02-08 プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法 Expired - Fee Related JP4814259B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/057,433 2005-02-15
US11/057,433 US7480974B2 (en) 2005-02-15 2005-02-15 Methods of making gas distribution members for plasma processing apparatuses
PCT/US2006/004284 WO2006088697A2 (en) 2005-02-15 2006-02-08 Methods of making gas distribution members for plasma processing apparatuses

Publications (3)

Publication Number Publication Date
JP2008537628A JP2008537628A (ja) 2008-09-18
JP2008537628A5 JP2008537628A5 (https=) 2009-03-26
JP4814259B2 true JP4814259B2 (ja) 2011-11-16

Family

ID=36814467

Family Applications (1)

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JP2007555173A Expired - Fee Related JP4814259B2 (ja) 2005-02-15 2006-02-08 プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法

Country Status (6)

Country Link
US (2) US7480974B2 (https=)
JP (1) JP4814259B2 (https=)
KR (1) KR101323025B1 (https=)
CN (1) CN101495268B (https=)
TW (1) TWI378152B (https=)
WO (1) WO2006088697A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP4849247B2 (ja) * 2006-12-22 2012-01-11 三菱マテリアル株式会社 比抵抗値の面内バラツキの小さい複合シリコン電極およびその製造方法
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
KR101623458B1 (ko) * 2008-03-26 2016-05-23 지티에이티 코포레이션 화학 증착 반응기의 가스 분배 시스템 및 방법
US20100071210A1 (en) * 2008-09-24 2010-03-25 Applied Materials, Inc. Methods for fabricating faceplate of semiconductor apparatus
KR101460555B1 (ko) * 2008-12-29 2014-11-14 주식회사 케이씨텍 샤워헤드 및 이를 구비하는 원자층 증착장치
JP5336968B2 (ja) * 2009-07-30 2013-11-06 東京エレクトロン株式会社 プラズマ処理装置用電極及びプラズマ処理装置
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8883029B2 (en) 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US9484190B2 (en) 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
US9275840B2 (en) 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
US9570289B2 (en) * 2015-03-06 2017-02-14 Lam Research Corporation Method and apparatus to minimize seam effect during TEOS oxide film deposition
JP6421294B1 (ja) * 2017-05-25 2018-11-14 株式会社三井Ｅ＆Ｓマシナリー シャワーヘッド加工工具およびシャワーヘッド加工工具の製造方法
JP7716425B2 (ja) * 2020-04-29 2025-07-31 ラム リサーチ コーポレーション 基板処理システムにおけるシャワーヘッドのグルーピングフィーチャ
JP7563846B2 (ja) * 2020-12-21 2024-10-08 東京エレクトロン株式会社 流量測定方法及び基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718441U (ja) * 1993-09-10 1995-03-31 日新電機株式会社 薄膜気相成長装置
JP2001185494A (ja) * 1999-12-27 2001-07-06 Toshiba Corp マグネトロンプラズマ処理装置及びプラズマ処理方法
JP2002064084A (ja) * 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd プラズマ処理用ガス導入装置およびプラズマ処理方法
JP2002155366A (ja) * 2000-11-15 2002-05-31 Tokyo Electron Ltd 枚葉式熱処理方法および枚葉式熱処理装置
WO2005019496A1 (en) * 2003-08-20 2005-03-03 Veeco Instruments Inc. Alkyl push flow for vertical flow rotating disk reactors

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539609A (en) * 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
US5644467A (en) * 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6090304A (en) * 1997-08-28 2000-07-18 Lam Research Corporation Methods for selective plasma etch
US6537418B1 (en) * 1997-09-19 2003-03-25 Siemens Aktiengesellschaft Spatially uniform gas supply and pump configuration for large wafer diameters
US6098568A (en) * 1997-12-01 2000-08-08 Applied Materials, Inc. Mixed frequency CVD apparatus
KR19990065416A (ko) * 1998-01-13 1999-08-05 윤종용 샤워 헤드를 포함하는 반도체장치 제조용 챔버 장비
US6464843B1 (en) * 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6106663A (en) * 1998-06-19 2000-08-22 Lam Research Corporation Semiconductor process chamber electrode
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
JP4162773B2 (ja) * 1998-08-31 2008-10-08 東京エレクトロン株式会社 プラズマ処理装置および検出窓
KR20000010029U (ko) * 1998-11-14 2000-06-15 김영환 반도체 증착장비용 샤워헤드
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
US6451157B1 (en) * 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6408786B1 (en) * 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
KR100338955B1 (ko) * 1999-12-31 2002-05-31 박종섭 반도체의 건식각 공정용 가스 공급 장치
US6444040B1 (en) * 2000-05-05 2002-09-03 Applied Materials Inc. Gas distribution plate
US6506254B1 (en) * 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
JP4484185B2 (ja) * 2000-08-29 2010-06-16 コバレントマテリアル株式会社 シリコン半導体基板の化学的気相薄膜成長方法
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
US6716302B2 (en) * 2000-11-01 2004-04-06 Applied Materials Inc. Dielectric etch chamber with expanded process window
US6620520B2 (en) * 2000-12-29 2003-09-16 Lam Research Corporation Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof
US20020127853A1 (en) * 2000-12-29 2002-09-12 Hubacek Jerome S. Electrode for plasma processes and method for manufacture and use thereof
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6852167B2 (en) * 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6830622B2 (en) * 2001-03-30 2004-12-14 Lam Research Corporation Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US7543547B1 (en) * 2002-07-31 2009-06-09 Lam Research Corporation Electrode assembly for plasma processing apparatus
JP2005019606A (ja) * 2003-06-25 2005-01-20 Anelva Corp プラズマ処理装置におけるガスシャワーヘッドまたはターゲットプレートを電極に固定する装置
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718441U (ja) * 1993-09-10 1995-03-31 日新電機株式会社 薄膜気相成長装置
JP2001185494A (ja) * 1999-12-27 2001-07-06 Toshiba Corp マグネトロンプラズマ処理装置及びプラズマ処理方法
JP2002064084A (ja) * 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd プラズマ処理用ガス導入装置およびプラズマ処理方法
JP2002155366A (ja) * 2000-11-15 2002-05-31 Tokyo Electron Ltd 枚葉式熱処理方法および枚葉式熱処理装置
WO2005019496A1 (en) * 2003-08-20 2005-03-03 Veeco Instruments Inc. Alkyl push flow for vertical flow rotating disk reactors

Also Published As

Publication number Publication date
US7480974B2 (en) 2009-01-27
JP2008537628A (ja) 2008-09-18
KR101323025B1 (ko) 2013-11-04
WO2006088697A3 (en) 2009-04-16
US20090120583A1 (en) 2009-05-14
TW200639268A (en) 2006-11-16
CN101495268A (zh) 2009-07-29
WO2006088697A2 (en) 2006-08-24
KR20070103508A (ko) 2007-10-23
TWI378152B (en) 2012-12-01
CN101495268B (zh) 2011-06-08
US20060180275A1 (en) 2006-08-17

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