CN101495268B - 制造用于等离子加工设备的气体分配构件的方法 - Google Patents

制造用于等离子加工设备的气体分配构件的方法 Download PDF

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Publication number
CN101495268B
CN101495268B CN2006800080809A CN200680008080A CN101495268B CN 101495268 B CN101495268 B CN 101495268B CN 2006800080809 A CN2006800080809 A CN 2006800080809A CN 200680008080 A CN200680008080 A CN 200680008080A CN 101495268 B CN101495268 B CN 101495268B
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China
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gas
distribution member
fumarole
gas distribution
permeability
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Expired - Lifetime
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CN2006800080809A
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Chinese (zh)
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CN101495268A (zh
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R·J·斯蒂格
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49764—Method of mechanical manufacture with testing or indicating
    • Y10T29/49771—Quantitative measuring or gauging

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Chemical Vapour Deposition (AREA)
CN2006800080809A 2005-02-15 2006-02-08 制造用于等离子加工设备的气体分配构件的方法 Expired - Lifetime CN101495268B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/057,433 2005-02-15
US11/057,433 US7480974B2 (en) 2005-02-15 2005-02-15 Methods of making gas distribution members for plasma processing apparatuses
PCT/US2006/004284 WO2006088697A2 (en) 2005-02-15 2006-02-08 Methods of making gas distribution members for plasma processing apparatuses

Publications (2)

Publication Number Publication Date
CN101495268A CN101495268A (zh) 2009-07-29
CN101495268B true CN101495268B (zh) 2011-06-08

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800080809A Expired - Lifetime CN101495268B (zh) 2005-02-15 2006-02-08 制造用于等离子加工设备的气体分配构件的方法

Country Status (6)

Country Link
US (2) US7480974B2 (https=)
JP (1) JP4814259B2 (https=)
KR (1) KR101323025B1 (https=)
CN (1) CN101495268B (https=)
TW (1) TWI378152B (https=)
WO (1) WO2006088697A2 (https=)

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US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US8702866B2 (en) * 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP4849247B2 (ja) * 2006-12-22 2012-01-11 三菱マテリアル株式会社 比抵抗値の面内バラツキの小さい複合シリコン電極およびその製造方法
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
KR101623458B1 (ko) * 2008-03-26 2016-05-23 지티에이티 코포레이션 화학 증착 반응기의 가스 분배 시스템 및 방법
US20100071210A1 (en) * 2008-09-24 2010-03-25 Applied Materials, Inc. Methods for fabricating faceplate of semiconductor apparatus
KR101460555B1 (ko) * 2008-12-29 2014-11-14 주식회사 케이씨텍 샤워헤드 및 이를 구비하는 원자층 증착장치
JP5336968B2 (ja) * 2009-07-30 2013-11-06 東京エレクトロン株式会社 プラズマ処理装置用電極及びプラズマ処理装置
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8883029B2 (en) 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US9484190B2 (en) 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
US9275840B2 (en) 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
US9570289B2 (en) * 2015-03-06 2017-02-14 Lam Research Corporation Method and apparatus to minimize seam effect during TEOS oxide film deposition
JP6421294B1 (ja) * 2017-05-25 2018-11-14 株式会社三井Ｅ＆Ｓマシナリー シャワーヘッド加工工具およびシャワーヘッド加工工具の製造方法
JP7716425B2 (ja) * 2020-04-29 2025-07-31 ラム リサーチ コーポレーション 基板処理システムにおけるシャワーヘッドのグルーピングフィーチャ
JP7563846B2 (ja) * 2020-12-21 2024-10-08 東京エレクトロン株式会社 流量測定方法及び基板処理装置

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CN1213848A (zh) * 1997-09-19 1999-04-14 西门子公司 用于大直径晶片的空间均匀的气体供给源和泵结构
CN1323444A (zh) * 1998-06-19 2001-11-21 拉姆研究公司 半导体工艺舱电极及其制作方法
CN1488161A (zh) * 2000-12-29 2004-04-07 ��ķ�о����޹�˾ 用于等离子工艺的电极以及制造和使用此电极的方法

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CN1323444A (zh) * 1998-06-19 2001-11-21 拉姆研究公司 半导体工艺舱电极及其制作方法
CN1488161A (zh) * 2000-12-29 2004-04-07 ��ķ�о����޹�˾ 用于等离子工艺的电极以及制造和使用此电极的方法

Also Published As

Publication number Publication date
US7480974B2 (en) 2009-01-27
JP2008537628A (ja) 2008-09-18
KR101323025B1 (ko) 2013-11-04
WO2006088697A3 (en) 2009-04-16
US20090120583A1 (en) 2009-05-14
TW200639268A (en) 2006-11-16
CN101495268A (zh) 2009-07-29
WO2006088697A2 (en) 2006-08-24
JP4814259B2 (ja) 2011-11-16
KR20070103508A (ko) 2007-10-23
TWI378152B (en) 2012-12-01
US20060180275A1 (en) 2006-08-17

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Granted publication date: 20110608