TWI378152B - Methods of making gas distribution members for plasma processing apparatuses - Google Patents

Methods of making gas distribution members for plasma processing apparatuses Download PDF

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Publication number
TWI378152B
TWI378152B TW095105083A TW95105083A TWI378152B TW I378152 B TWI378152 B TW I378152B TW 095105083 A TW095105083 A TW 095105083A TW 95105083 A TW95105083 A TW 95105083A TW I378152 B TWI378152 B TW I378152B
Authority
TW
Taiwan
Prior art keywords
gas
distribution member
regions
total
gas distribution
Prior art date
Application number
TW095105083A
Other languages
English (en)
Chinese (zh)
Other versions
TW200639268A (en
Inventor
Robert J Steger
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200639268A publication Critical patent/TW200639268A/zh
Application granted granted Critical
Publication of TWI378152B publication Critical patent/TWI378152B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49764—Method of mechanical manufacture with testing or indicating
    • Y10T29/49771—Quantitative measuring or gauging

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Chemical Vapour Deposition (AREA)
TW095105083A 2005-02-15 2006-02-15 Methods of making gas distribution members for plasma processing apparatuses TWI378152B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/057,433 US7480974B2 (en) 2005-02-15 2005-02-15 Methods of making gas distribution members for plasma processing apparatuses

Publications (2)

Publication Number Publication Date
TW200639268A TW200639268A (en) 2006-11-16
TWI378152B true TWI378152B (en) 2012-12-01

Family

ID=36814467

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105083A TWI378152B (en) 2005-02-15 2006-02-15 Methods of making gas distribution members for plasma processing apparatuses

Country Status (6)

Country Link
US (2) US7480974B2 (https=)
JP (1) JP4814259B2 (https=)
KR (1) KR101323025B1 (https=)
CN (1) CN101495268B (https=)
TW (1) TWI378152B (https=)
WO (1) WO2006088697A2 (https=)

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US20100071210A1 (en) * 2008-09-24 2010-03-25 Applied Materials, Inc. Methods for fabricating faceplate of semiconductor apparatus
KR101460555B1 (ko) * 2008-12-29 2014-11-14 주식회사 케이씨텍 샤워헤드 및 이를 구비하는 원자층 증착장치
JP5336968B2 (ja) * 2009-07-30 2013-11-06 東京エレクトロン株式会社 プラズマ処理装置用電極及びプラズマ処理装置
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8883029B2 (en) 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US9484190B2 (en) 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
US9275840B2 (en) 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
US9570289B2 (en) * 2015-03-06 2017-02-14 Lam Research Corporation Method and apparatus to minimize seam effect during TEOS oxide film deposition
JP6421294B1 (ja) * 2017-05-25 2018-11-14 株式会社三井Ｅ＆Ｓマシナリー シャワーヘッド加工工具およびシャワーヘッド加工工具の製造方法
JP7716425B2 (ja) * 2020-04-29 2025-07-31 ラム リサーチ コーポレーション 基板処理システムにおけるシャワーヘッドのグルーピングフィーチャ
JP7563846B2 (ja) * 2020-12-21 2024-10-08 東京エレクトロン株式会社 流量測定方法及び基板処理装置

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Also Published As

Publication number Publication date
US7480974B2 (en) 2009-01-27
JP2008537628A (ja) 2008-09-18
KR101323025B1 (ko) 2013-11-04
WO2006088697A3 (en) 2009-04-16
US20090120583A1 (en) 2009-05-14
TW200639268A (en) 2006-11-16
CN101495268A (zh) 2009-07-29
WO2006088697A2 (en) 2006-08-24
JP4814259B2 (ja) 2011-11-16
KR20070103508A (ko) 2007-10-23
CN101495268B (zh) 2011-06-08
US20060180275A1 (en) 2006-08-17

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