JP4808467B2 - 基板リングアセンブリ及び基板処理チャンバ - Google Patents

基板リングアセンブリ及び基板処理チャンバ Download PDF

Info

Publication number
JP4808467B2
JP4808467B2 JP2005320823A JP2005320823A JP4808467B2 JP 4808467 B2 JP4808467 B2 JP 4808467B2 JP 2005320823 A JP2005320823 A JP 2005320823A JP 2005320823 A JP2005320823 A JP 2005320823A JP 4808467 B2 JP4808467 B2 JP 4808467B2
Authority
JP
Japan
Prior art keywords
annular band
substrate
peripheral edge
substrate support
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005320823A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006140473A5 (https=
JP2006140473A (ja
Inventor
エー． ミラー キース
ラヴィトスキー イリヤ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2006140473A publication Critical patent/JP2006140473A/ja
Publication of JP2006140473A5 publication Critical patent/JP2006140473A5/ja
Application granted granted Critical
Publication of JP4808467B2 publication Critical patent/JP4808467B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
JP2005320823A 2004-11-03 2005-11-04 基板リングアセンブリ及び基板処理チャンバ Expired - Lifetime JP4808467B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/981,261 2004-11-03
US10/981,261 US7670436B2 (en) 2004-11-03 2004-11-03 Support ring assembly

Publications (3)

Publication Number Publication Date
JP2006140473A JP2006140473A (ja) 2006-06-01
JP2006140473A5 JP2006140473A5 (https=) 2011-03-31
JP4808467B2 true JP4808467B2 (ja) 2011-11-02

Family

ID=36260375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005320823A Expired - Lifetime JP4808467B2 (ja) 2004-11-03 2005-11-04 基板リングアセンブリ及び基板処理チャンバ

Country Status (5)

Country Link
US (1) US7670436B2 (https=)
JP (1) JP4808467B2 (https=)
KR (1) KR101267466B1 (https=)
CN (1) CN100437969C (https=)
TW (1) TWI328267B (https=)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US20060237043A1 (en) * 2005-04-25 2006-10-26 Applied Materials, Inc. Method and apparatus for cleaning semiconductor substrates
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US20070071583A1 (en) * 2005-09-29 2007-03-29 Stats Chippac Ltd. Substrate indexing system
US7736528B2 (en) * 2005-10-12 2010-06-15 Panasonic Corporation Plasma processing apparatus and plasma processing method
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP4609669B2 (ja) * 2006-06-27 2011-01-12 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 静電チャックモジュール
WO2008079722A2 (en) * 2006-12-19 2008-07-03 Applied Materials, Inc. Non-contact process kit
US8221602B2 (en) * 2006-12-19 2012-07-17 Applied Materials, Inc. Non-contact process kit
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
KR101397124B1 (ko) * 2007-02-28 2014-05-19 주성엔지니어링(주) 기판지지프레임 및 이를 포함하는 기판처리장치, 이를이용한 기판의 로딩 및 언로딩 방법
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
CN101328571B (zh) * 2007-06-22 2012-01-25 中芯国际集成电路制造(上海)有限公司 物理气相沉积装置及其维护方法
US20090050272A1 (en) * 2007-08-24 2009-02-26 Applied Materials, Inc. Deposition ring and cover ring to extend process components life and performance for process chambers
US9062379B2 (en) 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
CN102007572B (zh) * 2008-04-16 2013-01-16 应用材料公司 晶圆处理沉积屏蔽构件
KR101663844B1 (ko) * 2008-09-26 2016-10-07 램 리써치 코포레이션 정전 척에 대해 사용하기 위한 클로킹가능 디바이스
US20100122655A1 (en) * 2008-11-14 2010-05-20 Tiner Robin L Ball supported shadow frame
KR200483057Y1 (ko) * 2010-01-29 2017-03-30 어플라이드 머티어리얼스, 인코포레이티드 물리 기상 증착 챔버를 위한 실드, 스퍼터링 타겟의 스퍼터링 표면을 에워싸기 위한 실드, 및 프로세스 키트
US8920564B2 (en) * 2010-07-02 2014-12-30 Applied Materials, Inc. Methods and apparatus for thermal based substrate processing with variable temperature capability
WO2012024061A2 (en) * 2010-08-20 2012-02-23 Applied Materials, Inc. Extended life deposition ring
CN108359957A (zh) * 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
US9719169B2 (en) * 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US9905443B2 (en) * 2011-03-11 2018-02-27 Applied Materials, Inc. Reflective deposition rings and substrate processing chambers incorporating same
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
US9376752B2 (en) * 2012-04-06 2016-06-28 Applied Materials, Inc. Edge ring for a deposition chamber
JP2014080645A (ja) * 2012-10-15 2014-05-08 I Plant:Kk 基板保持装置
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
WO2014159222A1 (en) * 2013-03-14 2014-10-02 Applied Materials, Inc. Methods and apparatus for processing a substrate using a selectively grounded and movable process kit ring
WO2015023329A1 (en) * 2013-08-10 2015-02-19 Applied Materials, Inc. A method of polishing a new or a refurbished electrostatic chuck
US9799497B2 (en) * 2013-08-16 2017-10-24 Taiwan Semiconductor Manufacturing Company Limited Patterned processing kits for material processing
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
WO2015116245A1 (en) * 2014-01-30 2015-08-06 Applied Materials, Inc. Gas confiner assembly for eliminating shadow frame
CN104862660B (zh) 2014-02-24 2017-10-13 北京北方华创微电子装备有限公司 承载装置及等离子体加工设备
WO2015188879A1 (en) * 2014-06-13 2015-12-17 Applied Materials, Inc. Flat edge design for better uniformity and increased edge lifetime
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
JP2016184610A (ja) * 2015-03-25 2016-10-20 株式会社東芝 上部電極、エッジリングおよびプラズマ処理装置
TWI676357B (zh) * 2015-06-05 2019-11-01 美商蘭姆研究公司 配方組之執行同步系統與方法
GB201511282D0 (en) * 2015-06-26 2015-08-12 Spts Technologies Ltd Plasma etching apparatus
JP6976925B2 (ja) * 2015-07-03 2021-12-08 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 背高の堆積リングと堆積リングクランプとを有するプロセスキット
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
CN106702342B (zh) * 2015-11-17 2019-01-29 宁波江丰电子材料股份有限公司 用于靶材溅射工艺的压紧环
US10651015B2 (en) * 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US11043364B2 (en) * 2017-06-05 2021-06-22 Applied Materials, Inc. Process kit for multi-cathode processing chamber
CN109023287B (zh) * 2017-06-08 2024-05-17 北京北方华创微电子装备有限公司 沉积环及卡盘组件
CN109256357B (zh) * 2017-07-13 2020-06-19 北京北方华创微电子装备有限公司 高温静电卡盘
CN109837518B (zh) * 2017-11-28 2021-06-08 北京北方华创微电子装备有限公司 沉积环固定组件、承载装置及反应腔室
US20190272983A1 (en) * 2018-03-01 2019-09-05 Varian Semiconductor Equipment Associates, Inc. Substrate halo arrangement for improved process uniformity
CN111819679A (zh) 2018-03-13 2020-10-23 应用材料公司 具有等离子体喷涂涂层的支撑环
US10411448B1 (en) * 2018-08-20 2019-09-10 Siemens Industry, Inc. Ring assembly of radially-concentric rings with quick fastening mechanism to detachably connect such rings to one another
US11551965B2 (en) 2018-12-07 2023-01-10 Applied Materials, Inc. Apparatus to reduce polymers deposition
US11961723B2 (en) 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
KR102726757B1 (ko) * 2019-12-24 2024-11-08 주식회사 제우스 기판 처리장치
WO2021167581A1 (en) * 2020-02-17 2021-08-26 Jabil Inc. Apparatus, system and method for providing a semiconductor wafer leveling rim
USD933726S1 (en) 2020-07-31 2021-10-19 Applied Materials, Inc. Deposition ring for a semiconductor processing chamber
US11581166B2 (en) 2020-07-31 2023-02-14 Applied Materials, Inc. Low profile deposition ring for enhanced life
JP7546456B2 (ja) * 2020-11-13 2024-09-06 東京エレクトロン株式会社 エッジリングおよび基板処理装置
US11670493B2 (en) * 2020-11-13 2023-06-06 Applied Materials, Inc. Isolator ring clamp and physical vapor deposition chamber incorporating same
TWI749935B (zh) * 2020-12-03 2021-12-11 天虹科技股份有限公司 用以產生穩定偏壓的晶圓承載盤及應用該晶圓承載盤的薄膜沉積設備
US12112971B2 (en) * 2021-03-12 2024-10-08 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US12106943B2 (en) 2021-05-25 2024-10-01 Applied Materials, Inc. Substrate halo arrangement for improved process uniformity
US11915918B2 (en) 2021-06-29 2024-02-27 Applied Materials, Inc. Cleaning of sin with CCP plasma or RPS clean
CN118996336B (zh) * 2023-05-19 2025-11-11 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备

Family Cites Families (201)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482082A (en) 1966-03-18 1969-12-02 Techicon Corp Sample identification apparatus
US3679460A (en) 1970-10-08 1972-07-25 Union Carbide Corp Composite wear resistant material and method of making same
US4384918A (en) 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
US4419201A (en) 1981-08-24 1983-12-06 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
US4412133A (en) 1982-01-05 1983-10-25 The Perkin-Elmer Corp. Electrostatic cassette
JPS6059104B2 (ja) 1982-02-03 1985-12-23 株式会社東芝 静電チヤツク板
FR2538987A1 (fr) 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
GB2147459A (en) 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
US4606802A (en) 1983-12-21 1986-08-19 Hitachi, Ltd. Planar magnetron sputtering with modified field configuration
JPS6131636U (ja) 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
US5215639A (en) 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
DE3523958A1 (de) 1985-07-04 1987-01-08 Licentia Gmbh Verfahren zur chemischen behandlung von keramikkoerpern mit nachfolgender metallisierung
JP2515731B2 (ja) 1985-10-25 1996-07-10 株式会社日立製作所 薄膜形成装置および薄膜形成方法
US4684447A (en) 1986-03-24 1987-08-04 Conoco Inc. Method for applying protective coatings
CH670970A5 (https=) 1986-09-18 1989-07-31 Grob Ernst Fa
US4832781A (en) 1988-01-07 1989-05-23 Varian Associates, Inc. Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
DE68909665T2 (de) 1988-04-26 1994-02-10 Toto Ltd Verfahren zur Herstellung dielektrischer Keramik für elektrostatische Haltevorrichtungen.
JP2665242B2 (ja) 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
JP2807675B2 (ja) * 1988-11-30 1998-10-08 東京エレクトロン株式会社 レジスト処理装置
US5409590A (en) 1989-04-17 1995-04-25 Materials Research Corporation Target cooling and support for magnetron sputter coating apparatus
JP2779950B2 (ja) 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
US4995958A (en) 1989-05-22 1991-02-26 Varian Associates, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
IT1235332B (it) 1989-06-05 1992-06-26 Diaprint S P A Granitura elettrochimica di superfici in alluminio o in lega di alluminio
DE69103915T2 (de) 1990-01-25 1995-05-11 Applied Materials Inc Elektrostatische Klemmvorrichtung und Verfahren.
US5391275A (en) 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5055964A (en) 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
JP3064409B2 (ja) 1990-11-30 2000-07-12 株式会社日立製作所 保持装置およびそれを用いた半導体製造装置
US5280156A (en) 1990-12-25 1994-01-18 Ngk Insulators, Ltd. Wafer heating apparatus and with ceramic substrate and dielectric layer having electrostatic chucking means
US5166856A (en) 1991-01-31 1992-11-24 International Business Machines Corporation Electrostatic chuck with diamond coating
US5191506A (en) 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
US5325261A (en) 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5458759A (en) 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
US5275683A (en) 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
US5539609A (en) 1992-12-02 1996-07-23 Applied Materials, Inc. Electrostatic chuck usable in high density plasma
JPH05166757A (ja) 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
DE69222129T2 (de) 1991-12-18 1998-04-09 Sumitomo Light Metal Ind Automobilkarrosserieblech aus mehrfach beschichteter Aluminiumplatte
US5376223A (en) 1992-01-09 1994-12-27 Varian Associates, Inc. Plasma etch process
US5315473A (en) 1992-01-21 1994-05-24 Applied Materials, Inc. Isolated electrostatic chuck and excitation method
JP2865472B2 (ja) 1992-02-20 1999-03-08 信越化学工業株式会社 静電チャック
US5314597A (en) 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
FR2692599B1 (fr) 1992-06-17 1994-09-16 Prod Ind Cfpi Franc Procédé de traitement de substrats à base d'aluminium en vue de leur anodisation, bain mis en Óoeuvre dans ce procédé et concentré pour préparer le bain.
JP2938679B2 (ja) 1992-06-26 1999-08-23 信越化学工業株式会社 セラミックス製静電チャック
US5401319A (en) 1992-08-27 1995-03-28 Applied Materials, Inc. Lid and door for a vacuum chamber and pretreatment therefor
US6338906B1 (en) 1992-09-17 2002-01-15 Coorstek, Inc. Metal-infiltrated ceramic seal
JP2839801B2 (ja) 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
US5684669A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Method for dechucking a workpiece from an electrostatic chuck
US5350479A (en) 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5542559A (en) 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
JPH06326175A (ja) 1993-04-22 1994-11-25 Applied Materials Inc 集積回路処理装置において使用されるウエハサポートの誘電材への保護被覆とその形成方法
CH690805A5 (de) 1993-05-04 2001-01-15 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und Vakuumbehandlungsanlage hiermit.
US5403459A (en) 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
US5407551A (en) 1993-07-13 1995-04-18 The Boc Group, Inc. Planar magnetron sputtering apparatus
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US5433835B1 (en) 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5463526A (en) 1994-01-21 1995-10-31 Lam Research Corporation Hybrid electrostatic chuck
US5474649A (en) 1994-03-08 1995-12-12 Applied Materials, Inc. Plasma processing apparatus employing a textured focus ring
US5512078A (en) 1994-03-24 1996-04-30 Griffin; Stephen E. Apparatus for making linearly tapered bores in quartz tubing with a controlled laser
US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JP2720420B2 (ja) 1994-04-06 1998-03-04 キヤノン販売株式会社 成膜／エッチング装置
DE4446919A1 (de) 1994-12-28 1996-07-04 Dynamit Nobel Ag Verfahren zur Herstellung von innenverzahnten Teilen
JP2689931B2 (ja) 1994-12-29 1997-12-10 日本電気株式会社 スパッタ方法
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
US6073830A (en) 1995-04-21 2000-06-13 Praxair S.T. Technology, Inc. Sputter target/backing plate assembly and method of making same
US5886863A (en) 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
US5695825A (en) 1995-05-31 1997-12-09 Amorphous Technologies International Titanium-containing ferrous hard-facing material source and method for hard facing a substrate
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
GB2318590B (en) 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
KR100227924B1 (ko) 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US5805408A (en) * 1995-12-22 1998-09-08 Lam Research Corporation Electrostatic clamp with lip seal for clamping substrates
JPH09270400A (ja) 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法
JPH09270401A (ja) 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの研磨方法
US5879524A (en) 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target
JP3620554B2 (ja) 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
EP0803900A3 (en) 1996-04-26 1999-12-29 Applied Materials, Inc. Surface preparation to enhance the adhesion of a dielectric layer
US6108189A (en) 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US5720818A (en) 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
US5948288A (en) 1996-05-28 1999-09-07 Komag, Incorporated Laser disk texturing apparatus
US5824197A (en) 1996-06-05 1998-10-20 Applied Materials, Inc. Shield for a physical vapor deposition chamber
US5812362A (en) 1996-06-14 1998-09-22 Applied Materials, Inc. Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks
US5914018A (en) 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
US6143432A (en) 1998-01-09 2000-11-07 L. Pierre deRochemont Ceramic composites with improved interfacial properties and methods to make such composites
US5916454A (en) 1996-08-30 1999-06-29 Lam Research Corporation Methods and apparatus for reducing byproduct particle generation in a plasma processing chamber
US5942041A (en) 1996-09-16 1999-08-24 Mosel-Vitelic, Inc. Non-sticking semi-conductor wafer clamp and method of making same
US5830327A (en) 1996-10-02 1998-11-03 Intevac, Inc. Methods and apparatus for sputtering with rotating magnet sputter sources
US6007673A (en) 1996-10-02 1999-12-28 Matsushita Electronics Corporation Apparatus and method of producing an electronic device
US5685959A (en) 1996-10-25 1997-11-11 Hmt Technology Corporation Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6152071A (en) 1996-12-11 2000-11-28 Canon Kabushiki Kaisha High-frequency introducing means, plasma treatment apparatus, and plasma treatment method
US5821166A (en) 1996-12-12 1998-10-13 Komatsu Electronic Metals Co., Ltd. Method of manufacturing semiconductor wafers
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
JP4143131B2 (ja) 1996-12-21 2008-09-03 ジングルス・テヒノロギース・アクチェンゲゼルシャフト カソードスパッタリング装置および方法
WO1998031845A1 (en) 1997-01-16 1998-07-23 Bottomfield, Layne, F. Vapor deposition components and corresponding methods
US5963778A (en) 1997-02-13 1999-10-05 Tosoh Smd, Inc. Method for producing near net shape planar sputtering targets and an intermediate therefor
US5808270A (en) 1997-02-14 1998-09-15 Ford Global Technologies, Inc. Plasma transferred wire arc thermal spray apparatus and method
US5844318A (en) 1997-02-18 1998-12-01 Micron Technology, Inc. Aluminum film for semiconductive devices
US5916378A (en) 1997-03-11 1999-06-29 Wj Semiconductor Equipment Group, Inc. Method of reducing metal contamination during semiconductor processing in a reactor having metal components
DE19719133C2 (de) 1997-05-07 1999-09-02 Heraeus Quarzglas Glocke aus Quarzglas und Verfahren für ihre Herstellung
US6051114A (en) 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US6162297A (en) 1997-09-05 2000-12-19 Applied Materials, Inc. Embossed semiconductor fabrication parts
US6010583A (en) 1997-09-09 2000-01-04 Sony Corporation Method of making unreacted metal/aluminum sputter target
US5903428A (en) 1997-09-25 1999-05-11 Applied Materials, Inc. Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same
US5879523A (en) 1997-09-29 1999-03-09 Applied Materials, Inc. Ceramic coated metallic insulator particularly useful in a plasma sputter reactor
US5920764A (en) 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new
JPH11131254A (ja) 1997-10-24 1999-05-18 Nippon Parkerizing Co Ltd アルミニウム含有金属材料の表面処理方法
US5953827A (en) 1997-11-05 1999-09-21 Applied Materials, Inc. Magnetron with cooling system for process chamber of processing system
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
ES2264221T3 (es) 1997-12-22 2006-12-16 Asahi Kasei Kabushiki Kaisha Fibras para flocado electrico y articulo flocado electricamente.
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6579431B1 (en) 1998-01-14 2003-06-17 Tosoh Smd, Inc. Diffusion bonding of high purity metals and metal alloys to aluminum backing plates using nickel or nickel alloy interlayers
KR100265289B1 (ko) 1998-01-26 2000-09-15 윤종용 플라즈마식각장치의 캐소우드 제조방법 및 이에 따라 제조되는 캐소우드
JP3271658B2 (ja) 1998-03-23 2002-04-02 信越半導体株式会社 半導体シリコン単結晶ウェーハのラップ又は研磨方法
JP3483494B2 (ja) 1998-03-31 2004-01-06 キヤノン株式会社 真空処理装置および真空処理方法、並びに該方法によって作成される電子写真感光体
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
JP3500063B2 (ja) 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
US6086735A (en) 1998-06-01 2000-07-11 Praxair S.T. Technology, Inc. Contoured sputtering target
DE19830817B4 (de) 1998-07-09 2011-06-09 Leifeld Metal Spinning Gmbh Verfahren zum Umformen eines Werkstücks durch Drückwalzen
US6183686B1 (en) 1998-08-04 2001-02-06 Tosoh Smd, Inc. Sputter target assembly having a metal-matrix-composite backing plate and methods of making same
US6071389A (en) 1998-08-21 2000-06-06 Tosoh Smd, Inc. Diffusion bonded sputter target assembly and method of making
US6749103B1 (en) 1998-09-11 2004-06-15 Tosoh Smd, Inc. Low temperature sputter target bonding method and target assemblies produced thereby
KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP2002529600A (ja) 1998-11-06 2002-09-10 シヴァク 高レート・コーティング用のスパッタリング装置および方法
US6447853B1 (en) 1998-11-30 2002-09-10 Kawasaki Microelectronics, Inc. Method and apparatus for processing semiconductor substrates
US6276997B1 (en) 1998-12-23 2001-08-21 Shinhwa Li Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers
JP4141560B2 (ja) 1998-12-28 2008-08-27 日本メクトロン株式会社 回路基板のプラズマ処理装置
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6183614B1 (en) 1999-02-12 2001-02-06 Applied Materials, Inc. Rotating sputter magnetron assembly
KR100343136B1 (ko) 1999-03-18 2002-07-05 윤종용 이중 연마저지층을 이용한 화학기계적 연마방법
US6500321B1 (en) 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US6146509A (en) 1999-06-11 2000-11-14 Scivac Inverted field circular magnetron sputtering device
US6352620B2 (en) 1999-06-28 2002-03-05 Applied Materials, Inc. Staged aluminum deposition process for filling vias
KR100315088B1 (ko) * 1999-09-29 2001-11-24 윤종용 포커스 링을 갖는 반도체 웨이퍼 제조 장치
US6423175B1 (en) 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6190516B1 (en) 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6299740B1 (en) 2000-01-19 2001-10-09 Veeco Instrument, Inc. Sputtering assembly and target therefor
US6780794B2 (en) 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
US6227435B1 (en) 2000-02-02 2001-05-08 Ford Global Technologies, Inc. Method to provide a smooth paintable surface after aluminum joining
JP2002181050A (ja) 2000-03-16 2002-06-26 Nsk Ltd 転がり摺動部材とその製造方法及び転がり摺動ユニット
US6416634B1 (en) 2000-04-05 2002-07-09 Applied Materials, Inc. Method and apparatus for reducing target arcing during sputter deposition
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6287437B1 (en) 2000-05-05 2001-09-11 Alcatel Recessed bonding of target for RF diode sputtering
US6619537B1 (en) 2000-06-12 2003-09-16 Tosoh Smd, Inc. Diffusion bonding of copper sputtering targets to backing plates using nickel alloy interlayers
US6627050B2 (en) 2000-07-28 2003-09-30 Applied Materials, Inc. Method and apparatus for depositing a tantalum-containing layer on a substrate
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
WO2002014571A2 (en) 2000-08-17 2002-02-21 Tosoh Smd, Inc. High purity sputter targets with target end-of-life indication and method of manufacture
EP1322444A4 (en) 2000-09-11 2008-01-23 Tosoh Smd Inc METHOD FOR MANUFACTURING CATHODIC SPUTTER TARGETS WITH INTERNAL COOLING CHANNELS
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6858116B2 (en) 2000-11-17 2005-02-22 Nikko Materials Company, Limited Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles
US6916407B2 (en) 2000-11-27 2005-07-12 Unaxis Trading Ag Target comprising thickness profiling for an RF magnetron
US20020090464A1 (en) 2000-11-28 2002-07-11 Mingwei Jiang Sputter chamber shield
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
WO2002049785A1 (en) 2000-12-18 2002-06-27 Tosoh Smd, Inc. Low temperature sputter target/backing plate joining technique and assemblies made thereby
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
JP2002220661A (ja) 2001-01-29 2002-08-09 Sharp Corp スパッタリング装置に用いられるバッキングプレートおよびスパッタリング方法
US6576909B2 (en) 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
JP4209198B2 (ja) 2001-04-24 2009-01-14 トーソー エスエムディー，インク． ターゲット、およびターゲットプロファイルを最適化する方法
US6599405B2 (en) 2001-05-30 2003-07-29 Praxair S.T. Technology, Inc. Recessed sputter target
US6777045B2 (en) 2001-06-27 2004-08-17 Applied Materials Inc. Chamber components having textured surfaces and method of manufacture
US6620736B2 (en) * 2001-07-24 2003-09-16 Tokyo Electron Limited Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
US20030047464A1 (en) 2001-07-27 2003-03-13 Applied Materials, Inc. Electrochemically roughened aluminum semiconductor processing apparatus surfaces
US6656535B2 (en) 2001-12-21 2003-12-02 Applied Materials, Inc Method of fabricating a coated process chamber component
US6899798B2 (en) 2001-12-21 2005-05-31 Applied Materials, Inc. Reusable ceramic-comprising component which includes a scrificial surface layer
KR100446623B1 (ko) 2002-01-30 2004-09-04 삼성에스디아이 주식회사 전계 방출 표시장치 및 그 제조방법
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
US6623610B1 (en) 2002-03-02 2003-09-23 Shinzo Onishi Magnetron sputtering target for magnetic materials
KR20030071926A (ko) 2002-03-02 2003-09-13 엘지.필립스 엘시디 주식회사 스퍼터링 타겟 어셈블리 및 이를 이용한 스퍼터링 장비
US6730174B2 (en) 2002-03-06 2004-05-04 Applied Materials, Inc. Unitary removable shield assembly
US6812471B2 (en) 2002-03-13 2004-11-02 Applied Materials, Inc. Method of surface texturizing
US6933508B2 (en) 2002-03-13 2005-08-23 Applied Materials, Inc. Method of surface texturizing
US7026009B2 (en) 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
TWI269815B (en) 2002-05-20 2007-01-01 Tosoh Smd Inc Replaceable target sidewall insert with texturing
US6708870B2 (en) 2002-05-24 2004-03-23 Praxair S.T. Technology, Inc. Method for forming sputter target assemblies
US6652668B1 (en) 2002-05-31 2003-11-25 Praxair S.T. Technology, Inc. High-purity ferromagnetic sputter targets and method of manufacture
FR2842648B1 (fr) 2002-07-18 2005-01-14 Commissariat Energie Atomique Procede de transfert d'une couche mince electriquement active
EP1556526B1 (en) 2002-10-21 2009-03-11 Cabot Corporation Method of forming a sputtering target assembly and assembly made therefrom
US7025862B2 (en) * 2002-10-22 2006-04-11 Applied Materials Plating uniformity control by contact ring shaping
US6902628B2 (en) 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
EP1639620A2 (en) 2003-06-20 2006-03-29 Cabot Corporation Method and design for sputter target attachment to a backing plate
US6992261B2 (en) 2003-07-15 2006-01-31 Cabot Corporation Sputtering target assemblies using resistance welding
US7425093B2 (en) 2003-07-16 2008-09-16 Cabot Corporation Thermography test method and apparatus for bonding evaluation in sputtering targets
US20050061857A1 (en) 2003-09-24 2005-03-24 Hunt Thomas J. Method for bonding a sputter target to a backing plate and the assembly thereof
US7431195B2 (en) 2003-09-26 2008-10-07 Praxair S.T. Technology, Inc. Method for centering a sputter target onto a backing plate and the assembly thereof
WO2005074640A2 (en) 2004-02-03 2005-08-18 Honeywell International Inc. Physical vapor deposition target constructions
US20050178653A1 (en) 2004-02-17 2005-08-18 Charles Fisher Method for elimination of sputtering into the backing plate of a target/backing plate assembly
US7018515B2 (en) 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
US20060188742A1 (en) 2005-01-18 2006-08-24 Applied Materials, Inc. Chamber component having grooved surface
US20060005767A1 (en) * 2004-06-28 2006-01-12 Applied Materials, Inc. Chamber component having knurled surface
EP1903123B1 (de) 2004-11-19 2012-02-22 Applied Materials GmbH & Co. KG Trägerplatte mit einer darauf aufgesetzten gekühlten Rückenplatte
US7644745B2 (en) 2005-06-06 2010-01-12 Applied Materials, Inc. Bonding of target tiles to backing plate with patterned bonding agent
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8790499B2 (en) 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
US20070215463A1 (en) 2006-03-14 2007-09-20 Applied Materials, Inc. Pre-conditioning a sputtering target prior to sputtering
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080257263A1 (en) 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber

Also Published As

Publication number Publication date
US20060090706A1 (en) 2006-05-04
TWI328267B (en) 2010-08-01
KR20060052443A (ko) 2006-05-19
TW200629461A (en) 2006-08-16
KR101267466B1 (ko) 2013-05-31
JP2006140473A (ja) 2006-06-01
CN100437969C (zh) 2008-11-26
US7670436B2 (en) 2010-03-02
CN1790659A (zh) 2006-06-21

Similar Documents

Publication Publication Date Title
JP4808467B2 (ja) 基板リングアセンブリ及び基板処理チャンバ
JP7289890B2 (ja) 背高の堆積リングと堆積リングクランプとを有するプロセスキット
CN105177519B (zh) 用于物理气相沉积腔室的沉积环及静电夹盘
KR200482327Y1 (ko) 물리 기상 증착 챔버를 위한 실드, 스퍼터링 타겟의 스퍼터링 표면을 에워싸기 위한 실드, 및 프로세스 키트
KR101504085B1 (ko) 비접촉 프로세스 키트
US8221602B2 (en) Non-contact process kit
TWI471917B (zh) 用於基板處理腔室的冷卻遮蔽件
JP5762281B2 (ja) Ｒｆ物理気相蒸着用処理キット
US20100065216A1 (en) Ring assembly for substrate processing chamber
JP7794862B2 (ja) Ｐｖｄチャンバ用の背の高い堆積リングと小径の静電チャック（ｅｓｃ）とを有する処理キット
CN102007572A (zh) 晶圆处理沉积屏蔽构件
KR101011152B1 (ko) 기판받침대를 가지는 막 형성 장치

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081030

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101109

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110215

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20110215

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20110307

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110317

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110721

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110817

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140826

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4808467

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term