JP4805828B2 - 緑色発光led - Google Patents
緑色発光led Download PDFInfo
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- JP4805828B2 JP4805828B2 JP2006527271A JP2006527271A JP4805828B2 JP 4805828 B2 JP4805828 B2 JP 4805828B2 JP 2006527271 A JP2006527271 A JP 2006527271A JP 2006527271 A JP2006527271 A JP 2006527271A JP 4805828 B2 JP4805828 B2 JP 4805828B2
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- led
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- emission
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/55—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing beryllium, magnesium, alkali metals or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77347—Silicon Nitrides or Silicon Oxynitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Description
通常では、有色発光LEDは相応して適合するチップにより実現される。しかしながら、緑色発光の場合には、確立された技術、例えばInGaNチップ(青色)又はInGaAIPチップ(赤色)は効率がよくないために使用できないために問題となっている。その代わりに特別な解決手段を使用しなければならない。この種の特別な解決手段の例は、EP 584 599, DE 198 06 536及びDE 100 24 924に記載されている。しかしながら、これらの解決策はいまだになお比較的低い効率を示す。更に、前記解決策は前記発光の色度座標の比較的強い温度ドリフトを示す。
本発明の課題は、できる限り効率が高い請求項1記載の上位概念に記載の緑色発光LEDを提供することであった。他の課題は色度座標の安定化である。
次に、2つの実施例に基づき本発明について詳しく説明する。
図1は、第1のオキシニトリドシリケートの発光スペクトルを表す。
本発明による蛍光体についての具体的な例を図1に示した。これはHT変態の形の蛍光体SrSi2N2O2:(5%Eu2+)の発光であり、この場合Eu割合はSrが配置される格子位置の5mol%である。この発光極大は540nmにあり、平均波長λdomは558nmにある。この色度座標はx=0.357;y=0.605である。励起は、この場合460nmで行った。FWHMは76nmである。量子効率は約90%である。この色度座標はx=0.357;y=0.605である。
(1) : x/y=0.22/0.595;
(2) : x/y=0.37/0.46;
(3) : x/y=0.41/0.59及び
(4) : x/y=0.225/0.755
を有するほぼ四角形により規定される領域が、この場合に目標とされている利用可能な純粋に緑色の領域(ピュアグリーン)と見なされる(これについては図4参照)。
Claims (11)
- UV又は青色放射線領域で発光するチップである一次放射線源と、その前方に配置された蛍光体の層とからなり、前記蛍光体は前記チップの放射線を部分的に又は完全に主波長λdom=550〜570nmの緑色光に変換する波長変換型LEDとして構成されている緑色発光LEDにおいて、前記種類の蛍光体は、カチオンMを有しかつ基本式M(1-c)Si2O2N2:Dc(式中Dは二価のユーロピウムによるドーピングを意味し、Mは成分としてSrを有し、かつM=Sr単独又はM=Sr(1-x-y)BayCax(0≦x+y<0.5))であり)で示されるオキシニトリドシリケートに属し、かつ前記オキシニトリドシリケートは完全に又はほぼ、高温安定性のHT相からなり、前記蛍光体の出発成分のSi 3 N 4 はそれぞれ50ppmより少ないW及びCoを有することを特徴とする、緑色発光LED。
- Euの割合がMの0.1〜20mol%であることを特徴とする、請求項1記載のLED。
- MとしてSrは大部分の割合を占めていて、かつMの30mol%までがBa及び/又はCaに置き換えられていることを特徴とする、請求項1記載のLED。
- Mの30mol%までがLi及び/又はLa及び/又はZnに置き換えられていることを特徴とする、請求項1記載のLED。
- 式MSi2O2N2のオキシニトリドシリケート中の基SiNの30mol%までが基AlOに置き換えられていることを特徴とする、請求項1記載のLED。
- Euの30mol%までがMnに置き換えられていることを特徴とする、請求項1記載のLED。
- 一次発光が340〜430nmのピーク波長を有することを特徴とする、請求項1記載のLED。
- 緑色発光は556〜564nmの領域内の主波長を有することを特徴とする、請求項1記載のLED。
- 一次放射線が完全に変換されることを特徴とする、請求項1記載のLED。
- チップが430〜465nmの領域内のピーク発光波長を有するInGaNチップであることを特徴とする、請求項1記載のLED。
- LEDが調光可能であることを特徴とする、請求項1記載のLED。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10344376.2 | 2003-09-24 | ||
DE10344376 | 2003-09-24 | ||
PCT/DE2004/002136 WO2005030904A1 (de) | 2003-09-24 | 2004-09-24 | Grün emittierende led |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007507095A JP2007507095A (ja) | 2007-03-22 |
JP4805828B2 true JP4805828B2 (ja) | 2011-11-02 |
Family
ID=34384263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006527271A Active JP4805828B2 (ja) | 2003-09-24 | 2004-09-24 | 緑色発光led |
Country Status (7)
Country | Link |
---|---|
US (1) | US7851988B2 (ja) |
EP (2) | EP2275512B1 (ja) |
JP (1) | JP4805828B2 (ja) |
KR (1) | KR101130029B1 (ja) |
CN (1) | CN1856561B (ja) |
TW (1) | TWI356503B (ja) |
WO (1) | WO2005030904A1 (ja) |
Families Citing this family (19)
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TW200523340A (en) * | 2003-09-24 | 2005-07-16 | Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh | Hochefeizienter leuchtstoff |
DE102004051395A1 (de) * | 2004-10-21 | 2006-04-27 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Hocheffizienter stabiler Oxinitrid-Leuchtstoff |
DE102005030761A1 (de) * | 2005-07-01 | 2007-01-04 | Carl Zeiss Jena Gmbh | Beleuchtungseinrichtung für Mikroskope |
DE102005059521A1 (de) | 2005-12-13 | 2007-06-14 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Rot emittierender Leuchtstoff und Lichtquelle mit einem derartigen Leuchtstoff |
US7857994B2 (en) | 2007-05-30 | 2010-12-28 | GE Lighting Solutions, LLC | Green emitting phosphors and blends thereof |
CN101157854B (zh) * | 2007-07-02 | 2010-10-13 | 北京宇极科技发展有限公司 | 一种氮氧化合物发光材料、其制备方法及其应用 |
US20100195322A1 (en) * | 2007-07-30 | 2010-08-05 | Sharp Kabushiki Kaisha | Light emitting device, illuminating apparatus and clean room equipped with illuminating apparatus |
WO2009017206A1 (ja) * | 2007-08-01 | 2009-02-05 | Mitsubishi Chemical Corporation | 蛍光体及びその製造方法、結晶性窒化珪素及びその製造方法、蛍光体含有組成物、並びに、該蛍光体を用いた発光装置、画像表示装置及び照明装置 |
ATE510901T1 (de) * | 2007-12-03 | 2011-06-15 | Koninkl Philips Electronics Nv | Lichtemittierende vorrichtung mit einem grünes licht emittierenden material auf sialonbasis |
US8957435B2 (en) * | 2009-04-28 | 2015-02-17 | Cree, Inc. | Lighting device |
CN101775292A (zh) * | 2010-02-23 | 2010-07-14 | 厦门大学 | 一种Eu掺杂氮氧化物荧光粉的制备方法 |
CN101818063B (zh) * | 2010-05-14 | 2013-03-06 | 中国科学技术大学 | 制备硅基氧氮化物荧光粉的方法 |
CN102344797A (zh) * | 2010-07-29 | 2012-02-08 | 福华电子股份有限公司 | 一种荧光粉组成物及使用该荧光粉的交流电发光二极管 |
KR101890185B1 (ko) * | 2012-01-27 | 2018-08-21 | 엘지이노텍 주식회사 | 형광체 및 발광 장치 |
CN102618261A (zh) * | 2012-03-09 | 2012-08-01 | 东华大学 | 一种CaSi2O2N2:Eu2+, Dy3+, Li+荧光粉及其制备方法 |
KR102235612B1 (ko) | 2015-01-29 | 2021-04-02 | 삼성전자주식회사 | 일-함수 금속을 갖는 반도체 소자 및 그 형성 방법 |
EP3308603B1 (en) | 2015-06-12 | 2022-05-18 | Signify Holding B.V. | Ac-led with hybrid led channels |
CN105838371A (zh) * | 2016-04-27 | 2016-08-10 | 山东盈光新材料有限公司 | 一种led用氮氧化物荧光粉及制备方法 |
DE102018212724A1 (de) | 2018-07-31 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Grüner leuchtstoff und beleuchtungsvorrichtung |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004134805A (ja) * | 2002-10-14 | 2004-04-30 | Lumileds Lighting Us Llc | 蛍光体変換発光デバイス |
JP2005530917A (ja) * | 2002-09-24 | 2005-10-13 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光材料たとえばled用の発光材料 |
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EP0584599B1 (de) | 1992-08-28 | 1998-06-03 | Siemens Aktiengesellschaft | Leuchtdiode |
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US6255670B1 (en) * | 1998-02-06 | 2001-07-03 | General Electric Company | Phosphors for light generation from light emitting semiconductors |
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DE10024924A1 (de) | 2000-05-19 | 2001-11-29 | Osram Opto Semiconductors Gmbh | Licht emittierendes Halbleiterbauelement |
EP1328959A1 (en) * | 2000-07-28 | 2003-07-23 | Osram Opto Semiconductors GmbH & Co. OHG | Luminescence conversion based light emitting diode and phosphors for wavelength conversion |
JP2002076434A (ja) * | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | 発光装置 |
US6632379B2 (en) * | 2001-06-07 | 2003-10-14 | National Institute For Materials Science | Oxynitride phosphor activated by a rare earth element, and sialon type phosphor |
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US7061024B2 (en) * | 2002-10-14 | 2006-06-13 | Koninklijke Philips Electronics N.V. | Light-emitting device comprising an EU(II)-activated phosphor |
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TW200523340A (en) * | 2003-09-24 | 2005-07-16 | Patent Treuhand Ges Fur Elek Sche Gluhlampen Mbh | Hochefeizienter leuchtstoff |
TWI359187B (en) * | 2003-11-19 | 2012-03-01 | Panasonic Corp | Method for preparing nitridosilicate-based compoun |
JP4524468B2 (ja) * | 2004-05-14 | 2010-08-18 | Dowaエレクトロニクス株式会社 | 蛍光体とその製造方法および当該蛍光体を用いた光源並びにled |
JP4888624B2 (ja) * | 2004-07-30 | 2012-02-29 | 独立行政法人物質・材料研究機構 | α型サイアロン粉末の製造方法 |
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2004
- 2004-09-24 EP EP10190226A patent/EP2275512B1/de active Active
- 2004-09-24 US US10/572,891 patent/US7851988B2/en active Active
- 2004-09-24 WO PCT/DE2004/002136 patent/WO2005030904A1/de active Application Filing
- 2004-09-24 CN CN2004800275916A patent/CN1856561B/zh active Active
- 2004-09-24 JP JP2006527271A patent/JP4805828B2/ja active Active
- 2004-09-24 TW TW093128945A patent/TWI356503B/zh active
- 2004-09-24 KR KR1020067007848A patent/KR101130029B1/ko active IP Right Grant
- 2004-09-24 EP EP04786852.6A patent/EP1664238B1/de active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005530917A (ja) * | 2002-09-24 | 2005-10-13 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光材料たとえばled用の発光材料 |
JP2004134805A (ja) * | 2002-10-14 | 2004-04-30 | Lumileds Lighting Us Llc | 蛍光体変換発光デバイス |
Also Published As
Publication number | Publication date |
---|---|
US7851988B2 (en) | 2010-12-14 |
EP2275512A2 (de) | 2011-01-19 |
TWI356503B (en) | 2012-01-11 |
EP2275512A3 (de) | 2011-09-28 |
CN1856561A (zh) | 2006-11-01 |
EP1664238A1 (de) | 2006-06-07 |
EP2275512B1 (de) | 2012-07-25 |
TW200516789A (en) | 2005-05-16 |
KR101130029B1 (ko) | 2012-03-28 |
WO2005030904A1 (de) | 2005-04-07 |
CN1856561B (zh) | 2011-09-21 |
KR20060096442A (ko) | 2006-09-11 |
EP1664238B1 (de) | 2015-11-18 |
JP2007507095A (ja) | 2007-03-22 |
US20070034885A1 (en) | 2007-02-15 |
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