JP4799825B2 - レーザ照射方法 - Google Patents

レーザ照射方法 Download PDF

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Publication number
JP4799825B2
JP4799825B2 JP2004058378A JP2004058378A JP4799825B2 JP 4799825 B2 JP4799825 B2 JP 4799825B2 JP 2004058378 A JP2004058378 A JP 2004058378A JP 2004058378 A JP2004058378 A JP 2004058378A JP 4799825 B2 JP4799825 B2 JP 4799825B2
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Japan
Prior art keywords
laser
laser beam
irradiation
semiconductor film
substrate
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JP2004058378A
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Japanese (ja)
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JP2004289140A (ja
JP2004289140A5 (enExample
Inventor
智昭 森若
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2004289140A5 publication Critical patent/JP2004289140A5/ja
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  • Lasers (AREA)
JP2004058378A 2003-03-03 2004-03-03 レーザ照射方法 Expired - Fee Related JP4799825B2 (ja)

Priority Applications (1)

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JP2004058378A JP4799825B2 (ja) 2003-03-03 2004-03-03 レーザ照射方法

Applications Claiming Priority (3)

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JP2003055289 2003-03-03
JP2003055289 2003-03-03
JP2004058378A JP4799825B2 (ja) 2003-03-03 2004-03-03 レーザ照射方法

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JP2004289140A JP2004289140A (ja) 2004-10-14
JP2004289140A5 JP2004289140A5 (enExample) 2006-07-20
JP4799825B2 true JP4799825B2 (ja) 2011-10-26

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JP2004058378A Expired - Fee Related JP4799825B2 (ja) 2003-03-03 2004-03-03 レーザ照射方法

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4429586B2 (ja) 2002-11-08 2010-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7160762B2 (en) 2002-11-08 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus
JP4481040B2 (ja) * 2003-03-07 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1728271B1 (en) 2004-03-26 2016-06-08 Semiconductor Energy Laboratory Co, Ltd. Laser irradiation method and laser irradiation apparatus
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP5068975B2 (ja) * 2006-09-29 2012-11-07 富士フイルム株式会社 レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP5688203B2 (ja) * 2007-11-01 2015-03-25 株式会社半導体エネルギー研究所 半導体基板の作製方法
KR101391695B1 (ko) * 2012-04-24 2014-05-07 삼성디스플레이 주식회사 레이저 결정화 장비 및 이를 이용한 박막 트랜지스터 기판 제조 방법
JP7795880B2 (ja) * 2021-07-12 2026-01-08 住友重機械工業株式会社 アニール装置の制御装置、アニール装置、及びアニール方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183023A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPH04282869A (ja) * 1991-03-11 1992-10-07 G T C:Kk 薄膜半導体装置の製造方法及びこれを実施するための装置
JP3477888B2 (ja) * 1995-02-07 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法
JPH09270393A (ja) * 1996-03-29 1997-10-14 Sanyo Electric Co Ltd レーザー光照射装置
JPH11340160A (ja) * 1998-05-29 1999-12-10 Sumitomo Heavy Ind Ltd レーザアニーリング装置及び方法
JP2002139697A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp 複数レーザビームを用いたレーザ光学系とレーザアニーリング装置
JP4845309B2 (ja) * 2000-12-27 2011-12-28 株式会社半導体エネルギー研究所 レーザアニール方法及び半導体装置の作製方法
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法

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