JP4794227B2 - 電子放出素子 - Google Patents
電子放出素子 Download PDFInfo
- Publication number
- JP4794227B2 JP4794227B2 JP2005201271A JP2005201271A JP4794227B2 JP 4794227 B2 JP4794227 B2 JP 4794227B2 JP 2005201271 A JP2005201271 A JP 2005201271A JP 2005201271 A JP2005201271 A JP 2005201271A JP 4794227 B2 JP4794227 B2 JP 4794227B2
- Authority
- JP
- Japan
- Prior art keywords
- electron
- emitter
- electrode
- emitting device
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002245 particle Substances 0.000 claims description 171
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 67
- 239000000443 aerosol Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 239000002923 metal particle Substances 0.000 claims description 6
- 239000012141 concentrate Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 116
- 230000005684 electric field Effects 0.000 description 68
- 239000010419 fine particle Substances 0.000 description 62
- 239000010408 film Substances 0.000 description 52
- 239000000843 powder Substances 0.000 description 39
- 239000011521 glass Substances 0.000 description 34
- 239000002994 raw material Substances 0.000 description 27
- 239000003990 capacitor Substances 0.000 description 24
- 230000003746 surface roughness Effects 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 230000010287 polarization Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 238000002156 mixing Methods 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 238000012387 aerosolization Methods 0.000 description 10
- 239000011362 coarse particle Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- 239000011164 primary particle Substances 0.000 description 8
- 239000011575 calcium Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000005470 impregnation Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 239000003575 carbonaceous material Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 5
- 239000011163 secondary particle Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000002612 dispersion medium Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- HEPLMSKRHVKCAQ-UHFFFAOYSA-N lead nickel Chemical compound [Ni].[Pb] HEPLMSKRHVKCAQ-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 3
- MLOKPANHZRKTMG-UHFFFAOYSA-N lead(2+);oxygen(2-);tin(4+) Chemical compound [O-2].[O-2].[O-2].[Sn+4].[Pb+2] MLOKPANHZRKTMG-UHFFFAOYSA-N 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 2
- CJXLIMFTIKVMQN-UHFFFAOYSA-N dimagnesium;oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Mg+2].[Mg+2].[Ta+5].[Ta+5] CJXLIMFTIKVMQN-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 2
- DJZHPOJZOWHJPP-UHFFFAOYSA-N magnesium;dioxido(dioxo)tungsten Chemical compound [Mg+2].[O-][W]([O-])(=O)=O DJZHPOJZOWHJPP-UHFFFAOYSA-N 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/306—Ferroelectric cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/312—Cold cathodes having an electric field perpendicular to the surface thereof
- H01J2201/3125—Metal-insulator-Metal [MIM] emission type cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005201271A JP4794227B2 (ja) | 2004-07-15 | 2005-07-11 | 電子放出素子 |
| EP05254421A EP1635369A1 (en) | 2004-07-15 | 2005-07-14 | Electron emitter |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004208893 | 2004-07-15 | ||
| JP2004208893 | 2004-07-15 | ||
| JP2005017127 | 2005-01-25 | ||
| JP2005017127 | 2005-01-25 | ||
| JP2005201271A JP4794227B2 (ja) | 2004-07-15 | 2005-07-11 | 電子放出素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006236965A JP2006236965A (ja) | 2006-09-07 |
| JP2006236965A5 JP2006236965A5 (enExample) | 2006-12-28 |
| JP4794227B2 true JP4794227B2 (ja) | 2011-10-19 |
Family
ID=35506856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005201271A Expired - Fee Related JP4794227B2 (ja) | 2004-07-15 | 2005-07-11 | 電子放出素子 |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP1635369A1 (enExample) |
| JP (1) | JP4794227B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7482739B2 (en) | 2004-07-15 | 2009-01-27 | Ngk Insulators, Ltd. | Electron emitter comprised of dielectric material mixed with metal |
| JP4662140B2 (ja) * | 2004-07-15 | 2011-03-30 | 日本碍子株式会社 | 電子放出素子 |
| JP5312757B2 (ja) * | 2007-02-19 | 2013-10-09 | 日本碍子株式会社 | 誘電体デバイス及びその製造方法 |
| JP4303308B2 (ja) | 2007-11-20 | 2009-07-29 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、電子線硬化装置、および電子放出素子の製造方法 |
| US8299700B2 (en) | 2009-02-05 | 2012-10-30 | Sharp Kabushiki Kaisha | Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device |
| CN101814405B (zh) | 2009-02-24 | 2012-04-25 | 夏普株式会社 | 电子发射元件及其制造方法、使用电子发射元件的各装置 |
| JP4932873B2 (ja) | 2009-05-19 | 2012-05-16 | シャープ株式会社 | 自発光素子、自発光装置、画像表示装置、自発光素子駆動方法、および自発光素子の製造方法 |
| JP4732534B2 (ja) | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
| JP4777448B2 (ja) | 2009-05-19 | 2011-09-21 | シャープ株式会社 | 電子放出素子、電子放出装置、自発光デバイス、画像表示装置、送風装置、冷却装置、帯電装置、画像形成装置、及び電子線硬化装置 |
| JP4732533B2 (ja) | 2009-05-19 | 2011-07-27 | シャープ株式会社 | 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
| CN101930884B (zh) | 2009-06-25 | 2012-04-18 | 夏普株式会社 | 电子发射元件及其制造方法、电子发射装置、自发光设备、图像显示装置 |
| JP4880740B2 (ja) | 2009-12-01 | 2012-02-22 | シャープ株式会社 | 電子放出素子及びその製造方法、並びに、電子放出装置、帯電装置、画像形成装置、電子線硬化装置、自発光デバイス、画像表示装置、送風装置、冷却装置 |
| JP5491326B2 (ja) * | 2010-08-31 | 2014-05-14 | シャープ株式会社 | 電子放出素子及びその製造方法並びに電子放出装置 |
| IL243367B (en) * | 2015-12-27 | 2020-11-30 | Ariel Scient Innovations Ltd | A method and device for generating an electron beam and creating radiation |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3084286B2 (ja) * | 1990-11-22 | 2000-09-04 | 真空冶金株式会社 | セラミツクス誘電体厚膜コンデンサ、その製造方法および製造装置 |
| JPH0990882A (ja) * | 1995-09-20 | 1997-04-04 | Komatsu Ltd | 発光表示素子 |
| KR100369066B1 (ko) * | 1995-12-29 | 2003-03-28 | 삼성에스디아이 주식회사 | 강유전성에미터를적용한음극구조체및이를적용한전자총과음극선관 |
| JPH10241553A (ja) * | 1997-02-25 | 1998-09-11 | Yamaha Corp | 冷陰極型電界放出素子及びその製造方法 |
| US6541375B1 (en) * | 1998-06-30 | 2003-04-01 | Matsushita Electric Industrial Co., Ltd. | DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention |
| JP3265481B2 (ja) * | 1999-04-23 | 2002-03-11 | 独立行政法人産業技術総合研究所 | 脆性材料超微粒子成形体の低温成形法 |
| JP2001152360A (ja) * | 1999-11-25 | 2001-06-05 | Ricoh Co Ltd | セラミックス誘電体膜の形成方法、セラミックス誘電体膜／基板の積層構造体、及び電気−機械変換素子 |
| JP2003277948A (ja) * | 2000-10-23 | 2003-10-02 | National Institute Of Advanced Industrial & Technology | 複合構造物およびその製造方法 |
| JP2003165773A (ja) * | 2001-11-29 | 2003-06-10 | Kyocera Corp | 高誘電率ガラスセラミックス及びそれを用いた配線基板 |
| JP2004146364A (ja) * | 2002-09-30 | 2004-05-20 | Ngk Insulators Ltd | 発光素子及びそれを具えるフィールドエミッションディスプレイ |
| JP2004172087A (ja) * | 2002-11-05 | 2004-06-17 | Ngk Insulators Ltd | ディスプレイ |
| JP3869819B2 (ja) * | 2002-11-29 | 2007-01-17 | 日本碍子株式会社 | 電子放出素子 |
| JP4273026B2 (ja) * | 2003-03-26 | 2009-06-03 | 日本碍子株式会社 | 表示装置、表示装置の駆動方法、電子放出素子、電子放出素子の駆動方法、電子放出素子の駆動装置、電子放出装置、電子放出装置の駆動方法 |
| JP2005183361A (ja) * | 2003-10-03 | 2005-07-07 | Ngk Insulators Ltd | 電子放出素子、電子放出装置、ディスプレイ及び光源 |
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| JP2006236965A (ja) | 2006-09-07 |
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