JP4793791B2 - 微細パターン複製用金型の作製方法 - Google Patents
微細パターン複製用金型の作製方法 Download PDFInfo
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- JP4793791B2 JP4793791B2 JP2006511494A JP2006511494A JP4793791B2 JP 4793791 B2 JP4793791 B2 JP 4793791B2 JP 2006511494 A JP2006511494 A JP 2006511494A JP 2006511494 A JP2006511494 A JP 2006511494A JP 4793791 B2 JP4793791 B2 JP 4793791B2
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- mold
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 230000010076 replication Effects 0.000 title claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 90
- 238000007747 plating Methods 0.000 claims description 74
- 229910052759 nickel Inorganic materials 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- -1 polysiloxane Polymers 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 14
- 229920001296 polysiloxane Polymers 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 5
- 125000003342 alkenyl group Chemical group 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 23
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- 239000011521 glass Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 9
- 239000004205 dimethyl polysiloxane Substances 0.000 description 9
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 9
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 6
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 6
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 229940046892 lead acetate Drugs 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001921 poly-methyl-phenyl-siloxane Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000000807 solvent casting Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
- B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/20—Separation of the formed objects from the electrodes with no destruction of said electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H1/024—Hologram nature or properties
- G03H1/0244—Surface relief holograms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/04—Processes or apparatus for producing holograms
- G03H1/08—Synthesising holograms, i.e. holograms synthesized from objects or objects from holograms
- G03H1/0891—Processes or apparatus adapted to convert digital holographic data into a hologram
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H1/0276—Replicating a master hologram without interference recording
- G03H2001/0288—Replicating a master hologram without interference recording by electroforming
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H1/00—Holographic processes or apparatus using light, infrared or ultraviolet waves for obtaining holograms or for obtaining an image from them; Details peculiar thereto
- G03H1/02—Details of features involved during the holographic process; Replication of holograms without interference recording
- G03H1/0276—Replicating a master hologram without interference recording
- G03H2001/0296—Formation of the master hologram
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03H—HOLOGRAPHIC PROCESSES OR APPARATUS
- G03H2260/00—Recording materials or recording processes
- G03H2260/14—Photoresist
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Chemically Coating (AREA)
Description
(2)得られた塗膜上に露光し、現像してパターニングする工程、
(3)得られたレジストパターン上に、メッキして金属メッキ層を形成する工程、及び
(4)形成された金属メッキ層を、基板及びレジストパターンから剥離する工程
を含むことを特徴とする微細パターン複製用金型の作製方法。
RnSiO(4−n)/2 (I)
(式中、Rは、アルキル基、アリール基、アルケニル基、アラルキル基又は水素原子を示す。nは、0<n≦2の範囲の数である。)で表され、その重量平均分子量が10万〜150万であるポリシロキサンを樹脂成分として含有するものである上記項1に記載の金型の作製方法。
(1)基板上に、シリコン含有レジストを塗布し、乾燥して製膜する工程、
(2)得られた塗膜上に露光し、現像してパターニングする工程、
(3)得られたレジストパターン上に、メッキして金属メッキ層を形成する工程、及び
(4)形成された金属メッキ層を、基板及びレジストパターンから剥離する工程
を含むことを特徴としている。
基板上に、シリコン含有レジストを塗布し、乾燥して製膜する工程である。
RnSiO(4−n)/2 (I)
(式中、Rは、アルキル基、アリール基、アルケニル基、アラルキル基又は水素原子を示す。nは、0<n≦2の範囲の数である。)で表され、その重量平均分子量が10万〜150万程度であるポリシロキサンを樹脂成分として含有するレジスト組成物が、電子線に対する感度が高い点等から、特に好ましい。
工程(1)で得られた塗膜上に露光し、現像してパターニングする工程である。
工程(2)で得られたレジストパターン上に、メッキして金属メッキ層を形成する工程である。このメッキの際、レジストパターン上に、いかなる処理もする必要がない。このメッキにより、シリコン含有レジストの撥水性に基づいて、レジストパターン(マスターパターン)に対応した精密な反転パターンが金属メッキ層上に転写される。
工程(3)で形成された金属メッキ層を、基板及びレジストパターン(マスターパターン)から剥離して、金型を得る工程である。このレジストパターンは、シリコン含有レジストからなるため、その接着性の低さから離型性に優れるので、金属メッキ層を容易に剥離することができる。剥離は、通常、金属メッキ層を軽く引っ張る程度で容易に行うことができる。
本発明の微細パターン複製用金型を用いることにより、計算機ホログラム(CGH)、回折格子、マイクロレンズ、プリズム等の光学素子等のレプリカを、容易に作成することができる。
2 シリコン含有レジスト
3 露光
4 レジストパターン
5 金属メッキ層
6 微細パターン複製用金型
7 アクリル系レジスト
8 ニッケル蒸着膜
9 ニッケルメッキ層
10 微細パターン複製用ニッケル金型
ポリジメチルシロキサン(PDMS、分子量40万、分散度(Dp)80)をトルエンに溶かして2.5重量%溶液として得たレジスト組成物を、ITO薄膜付きガラス基板上に、スピンコーターを用いて3,500rpm、60秒間の条件で塗布した。この塗布された基板を、ホットプレートで170℃、2分間乾燥して、膜厚約1μmのPDMSからなるレジスト膜を形成した。
ポリジメチルシロキサン(PDMS、分子量40万、分散度(Dp)80)をトルエンに溶かして2.5重量%溶液として得たレジスト組成物を、ガラス基板上に、スピンコーターを用いて3,500rpm、60秒間の条件で塗布した。この塗布された基板を、ホットプレートで170℃、2分間乾燥して、膜厚約1μmのPDMSからなるレジスト膜を形成した。
Claims (4)
- (1)基板上に、シリコン含有レジストを塗布し、乾燥して製膜する工程、
(2)得られた塗膜上に露光し、現像してパターニングする工程、
(3)得られたレジストパターン上に、直接メッキして金属メッキ層を形成する工程、及び
(4)形成された金属メッキ層を、基板及びレジストパターンから剥離する工程
を含むことを特徴とする微細パターン複製用金型の作製方法であって、
レジストパターンが、一般式
RnSiO(4−n)/2 (I)
(式中、Rは、アルキル基、アリール基、アルケニル基、アラルキル基又は水素原子を示す。nは、0<n≦2の範囲の数である。)で表され、その重量平均分子量が10万〜150万であるポリシロキサンを樹脂成分として含有するものであり、
工程(3)のメッキが、電解メッキ又は無電解メッキである金型の作製方法。 - 露光を電子線描画により行う請求項1に記載の金型の作製方法。
- 基板が、導電性基板であり、且つレジストパターン上に電解ニッケルメッキする請求項1に記載の金型の作製方法。
- 基板が、非導電性基板であり、且つレジストパターン上に無電解ニッケルメッキする請求項1に記載の金型の作製方法。
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PCT/JP2005/005368 WO2005093131A1 (ja) | 2004-03-26 | 2005-03-24 | 微細パターン複製用金型の作製方法 |
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CN106154382A (zh) * | 2016-08-18 | 2016-11-23 | 中国科学技术大学 | 具有高衍射效率的大口径薄膜衍射元件的制作方法 |
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WO2008093511A1 (ja) * | 2007-01-30 | 2008-08-07 | Konica Minolta Opto, Inc. | 光学素子の成形装置及び光学素子の成形方法 |
JP5327743B2 (ja) * | 2009-02-18 | 2013-10-30 | 国立大学法人信州大学 | 凹凸パターン形成方法 |
FR2958761B1 (fr) | 2010-04-12 | 2012-03-23 | Delphi Tech Inc | Systeme d?indexage et d?affichage holographique pour interface de |
KR102370558B1 (ko) * | 2018-07-12 | 2022-03-08 | 한국기계연구원 | 나노 또는 마이크로 구조물이 형성된 마스터를 제작하는 방법 |
CN112904664B (zh) * | 2019-11-19 | 2024-04-30 | 苏州维业达科技有限公司 | 微纳模具及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156015A (en) * | 1979-05-23 | 1980-12-04 | Seikosha Co Ltd | Manufacture of electroforming mold |
JPH10282677A (ja) * | 1997-04-09 | 1998-10-23 | Hitachi Ltd | 光ディスク原盤の作製方法及び光ディスク基板 |
JP2002196494A (ja) * | 2000-12-27 | 2002-07-12 | Japan Science & Technology Corp | ポジ型レジスト組成物及びパターニング方法 |
JP2002365805A (ja) * | 2001-03-26 | 2002-12-18 | Nippon Paint Co Ltd | 金属パターンの形成方法 |
JP2003279716A (ja) * | 2002-03-20 | 2003-10-02 | Japan Science & Technology Corp | 回折光学素子の製造法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55156015A (en) * | 1979-05-23 | 1980-12-04 | Seikosha Co Ltd | Manufacture of electroforming mold |
JPH10282677A (ja) * | 1997-04-09 | 1998-10-23 | Hitachi Ltd | 光ディスク原盤の作製方法及び光ディスク基板 |
JP2002196494A (ja) * | 2000-12-27 | 2002-07-12 | Japan Science & Technology Corp | ポジ型レジスト組成物及びパターニング方法 |
JP2002365805A (ja) * | 2001-03-26 | 2002-12-18 | Nippon Paint Co Ltd | 金属パターンの形成方法 |
JP2003279716A (ja) * | 2002-03-20 | 2003-10-02 | Japan Science & Technology Corp | 回折光学素子の製造法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106154382A (zh) * | 2016-08-18 | 2016-11-23 | 中国科学技术大学 | 具有高衍射效率的大口径薄膜衍射元件的制作方法 |
CN106154382B (zh) * | 2016-08-18 | 2018-12-14 | 中国科学技术大学 | 具有高衍射效率的大口径薄膜衍射元件的制作方法 |
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