JP4780818B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4780818B2
JP4780818B2 JP2000058560A JP2000058560A JP4780818B2 JP 4780818 B2 JP4780818 B2 JP 4780818B2 JP 2000058560 A JP2000058560 A JP 2000058560A JP 2000058560 A JP2000058560 A JP 2000058560A JP 4780818 B2 JP4780818 B2 JP 4780818B2
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JP
Japan
Prior art keywords
metal
metal film
silicon substrate
contact hole
film
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000058560A
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English (en)
Japanese (ja)
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JP2001250791A (ja
JP2001250791A5 (enExample
Inventor
雅彦 藤澤
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2000058560A priority Critical patent/JP4780818B2/ja
Priority to US09/635,901 priority patent/US6593217B1/en
Publication of JP2001250791A publication Critical patent/JP2001250791A/ja
Publication of JP2001250791A5 publication Critical patent/JP2001250791A5/ja
Application granted granted Critical
Publication of JP4780818B2 publication Critical patent/JP4780818B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2000058560A 2000-03-03 2000-03-03 半導体装置の製造方法 Expired - Fee Related JP4780818B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000058560A JP4780818B2 (ja) 2000-03-03 2000-03-03 半導体装置の製造方法
US09/635,901 US6593217B1 (en) 2000-03-03 2000-08-11 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000058560A JP4780818B2 (ja) 2000-03-03 2000-03-03 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011129206A Division JP2011176372A (ja) 2011-06-09 2011-06-09 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2001250791A JP2001250791A (ja) 2001-09-14
JP2001250791A5 JP2001250791A5 (enExample) 2007-04-26
JP4780818B2 true JP4780818B2 (ja) 2011-09-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000058560A Expired - Fee Related JP4780818B2 (ja) 2000-03-03 2000-03-03 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6593217B1 (enExample)
JP (1) JP4780818B2 (enExample)

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JP4668530B2 (ja) * 2003-12-15 2011-04-13 シチズンホールディングス株式会社 半導体装置の製造方法
JP2005294360A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp 半導体装置の製造方法
US7183780B2 (en) * 2004-09-17 2007-02-27 International Business Machines Corporation Electrical open/short contact alignment structure for active region vs. gate region
US7317217B2 (en) * 2004-09-17 2008-01-08 International Business Machines Corporation Semiconductor scheme for reduced circuit area in a simplified process
KR100600380B1 (ko) * 2004-12-29 2006-07-18 동부일렉트로닉스 주식회사 반도체 소자의 제조 방법
JP4515305B2 (ja) * 2005-03-29 2010-07-28 富士通セミコンダクター株式会社 ｐチャネルＭＯＳトランジスタおよびその製造方法、半導体集積回路装置の製造方法
KR100675294B1 (ko) * 2005-10-18 2007-01-29 삼성전자주식회사 리세스된 랜딩패드를 갖는 반도체소자 및 그 제조방법
US7648871B2 (en) * 2005-10-21 2010-01-19 International Business Machines Corporation Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same
JP4936709B2 (ja) * 2005-11-25 2012-05-23 東京エレクトロン株式会社 プラズマエッチング方法および半導体装置の製造方法
US7696019B2 (en) * 2006-03-09 2010-04-13 Infineon Technologies Ag Semiconductor devices and methods of manufacturing thereof
US8435873B2 (en) * 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
US20080076246A1 (en) * 2006-09-25 2008-03-27 Peterson Brennan L Through contact layer opening silicide and barrier layer formation
KR100835521B1 (ko) * 2006-12-27 2008-06-04 동부일렉트로닉스 주식회사 반도체 소자의 구조 및 그의 제조방법
JP5165954B2 (ja) * 2007-07-27 2013-03-21 セイコーインスツル株式会社 半導体装置
US8299455B2 (en) * 2007-10-15 2012-10-30 International Business Machines Corporation Semiconductor structures having improved contact resistance
EP2232537B1 (de) 2008-01-17 2014-08-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrische kontaktierung von halbleiter-bauelementen mit geringem kontaktwiderstand
JP5353093B2 (ja) * 2008-07-15 2013-11-27 株式会社デンソー 半導体装置の製造方法
KR101552938B1 (ko) * 2009-02-02 2015-09-14 삼성전자주식회사 스트레스 생성층을 갖는 반도체 소자의 제조방법
DE102009031114B4 (de) * 2009-06-30 2011-07-07 Globalfoundries Dresden Module One LLC & CO. KG, 01109 Halbleiterelement, das in einem kristallinen Substratmaterial hergestellt ist und ein eingebettetes in-situ n-dotiertes Halbleitermaterial aufweist, und Verfahren zur Herstellung desselben
US8193081B2 (en) * 2009-10-20 2012-06-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for metal gate formation with wider metal gate fill margin
JP4786741B2 (ja) * 2009-12-28 2011-10-05 株式会社東芝 半導体装置
DE102010029532B4 (de) * 2010-05-31 2012-01-26 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Transistor mit eingebettetem verformungsinduzierenden Material, das in diamantförmigen Aussparungen auf der Grundlage einer Voramorphisierung hergestellt ist
KR101728135B1 (ko) * 2010-06-11 2017-04-18 삼성전자 주식회사 반도체 소자의 제조방법
US8358012B2 (en) * 2010-08-03 2013-01-22 International Business Machines Corporation Metal semiconductor alloy structure for low contact resistance
CN102468326B (zh) * 2010-10-29 2015-01-07 中国科学院微电子研究所 接触电极制造方法和半导体器件
KR101812036B1 (ko) * 2011-01-06 2017-12-26 삼성전자 주식회사 금속 실리사이드층을 포함하는 반도체 소자 및 그 제조 방법
US8415250B2 (en) * 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
KR101873911B1 (ko) * 2011-06-07 2018-07-04 삼성전자주식회사 콘택 구조체를 포함하는 반도체 소자와 그 제조방법, 및 그것을 포함하는 전자 시스템
US9496270B2 (en) * 2014-05-30 2016-11-15 Qualcomm Incorporated High density single-transistor antifuse memory cell
US9214396B1 (en) * 2014-06-03 2015-12-15 Globalfoundries Inc. Transistor with embedded stress-inducing layers
US20150372100A1 (en) * 2014-06-19 2015-12-24 GlobalFoundries, Inc. Integrated circuits having improved contacts and methods for fabricating same
US9691804B2 (en) * 2015-04-17 2017-06-27 Taiwan Semiconductor Manufacturing Company Ltd. Image sensing device and manufacturing method thereof
US9887289B2 (en) 2015-12-14 2018-02-06 International Business Machines Corporation Method and structure of improving contact resistance for passive and long channel devices
US10141438B2 (en) * 2016-03-07 2018-11-27 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
CN111276486B (zh) 2018-12-07 2021-03-12 长江存储科技有限责任公司 新型3d nand存储器件及其形成方法
KR102554692B1 (ko) * 2019-02-18 2023-07-12 양쯔 메모리 테크놀로지스 씨오., 엘티디. 집적 구조체 및 형성 방법
CN111755403B (zh) * 2020-07-16 2022-09-20 福建省晋华集成电路有限公司 接触插塞结构、其制作方法及半导体器件的制作方法
US11825661B2 (en) 2020-09-23 2023-11-21 Taiwan Semiconductor Manufacturing Company Limited Mobility enhancement by source and drain stress layer of implantation in thin film transistors
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JP2001250791A (ja) 2001-09-14
US6593217B1 (en) 2003-07-15

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