JP4776792B2 - 発光装置および電気器具 - Google Patents

発光装置および電気器具 Download PDF

Info

Publication number
JP4776792B2
JP4776792B2 JP2001053361A JP2001053361A JP4776792B2 JP 4776792 B2 JP4776792 B2 JP 4776792B2 JP 2001053361 A JP2001053361 A JP 2001053361A JP 2001053361 A JP2001053361 A JP 2001053361A JP 4776792 B2 JP4776792 B2 JP 4776792B2
Authority
JP
Japan
Prior art keywords
region
electrode
insulating film
tft
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001053361A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001318628A5 (enExample
JP2001318628A (ja
Inventor
舜平 山崎
潤 小山
和隆 犬飼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001053361A priority Critical patent/JP4776792B2/ja
Publication of JP2001318628A publication Critical patent/JP2001318628A/ja
Publication of JP2001318628A5 publication Critical patent/JP2001318628A5/ja
Application granted granted Critical
Publication of JP4776792B2 publication Critical patent/JP4776792B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001053361A 2000-02-28 2001-02-28 発光装置および電気器具 Expired - Lifetime JP4776792B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001053361A JP4776792B2 (ja) 2000-02-28 2001-02-28 発光装置および電気器具

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-50584 2000-02-28
JP2000050584 2000-02-28
JP2000050584 2000-02-28
JP2001053361A JP4776792B2 (ja) 2000-02-28 2001-02-28 発光装置および電気器具

Publications (3)

Publication Number Publication Date
JP2001318628A JP2001318628A (ja) 2001-11-16
JP2001318628A5 JP2001318628A5 (enExample) 2008-04-10
JP4776792B2 true JP4776792B2 (ja) 2011-09-21

Family

ID=26586176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001053361A Expired - Lifetime JP4776792B2 (ja) 2000-02-28 2001-02-28 発光装置および電気器具

Country Status (1)

Country Link
JP (1) JP4776792B2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100637433B1 (ko) 2004-05-24 2006-10-20 삼성에스디아이 주식회사 발광 표시 장치
US7483001B2 (en) * 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
JP3939666B2 (ja) * 2002-01-18 2007-07-04 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4490403B2 (ja) * 2002-01-18 2010-06-23 株式会社半導体エネルギー研究所 発光装置
CN101673508B (zh) * 2002-01-18 2013-01-09 株式会社半导体能源研究所 发光器件
JP3706107B2 (ja) * 2002-01-18 2005-10-12 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP3818261B2 (ja) * 2002-01-24 2006-09-06 セイコーエプソン株式会社 発光装置及び電子機器
JP2003255858A (ja) * 2002-02-28 2003-09-10 Sanyo Electric Co Ltd 表示装置
US7230592B2 (en) 2002-03-04 2007-06-12 Hitachi, Ltd. Organic electroluminescent light emitting display device
JP3989761B2 (ja) * 2002-04-09 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
US7038239B2 (en) 2002-04-09 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
JP4463493B2 (ja) 2002-04-15 2010-05-19 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4640690B2 (ja) 2002-07-24 2011-03-02 日本電気株式会社 アクティブマトリクス有機ｅｌ表示装置の製造方法
KR100768972B1 (ko) 2002-11-25 2007-10-22 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 유기 ｅｌ 표시 패널
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
JP4287337B2 (ja) * 2003-11-24 2009-07-01 三星モバイルディスプレイ株式會社 有機電界発光表示装置及びその製造方法
KR100684825B1 (ko) * 2003-11-24 2007-02-20 삼성에스디아이 주식회사 유기 전계발광 표시 장치 및 그 제조 방법
KR100612392B1 (ko) 2004-10-13 2006-08-16 삼성에스디아이 주식회사 발광 표시 장치 및 발광 표시 패널
KR100688801B1 (ko) 2004-11-22 2007-03-02 삼성에스디아이 주식회사 델타 화소회로 및 발광 표시장치
KR100688802B1 (ko) 2004-11-22 2007-03-02 삼성에스디아이 주식회사 화소 및 발광 표시장치
JP5177962B2 (ja) * 2005-05-20 2013-04-10 株式会社半導体エネルギー研究所 半導体装置
US7705346B2 (en) * 2005-06-06 2010-04-27 Xerox Corporation Barrier layer for an organic electronic device
KR101324756B1 (ko) 2005-10-18 2013-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그의 구동방법
JP4661557B2 (ja) * 2005-11-30 2011-03-30 セイコーエプソン株式会社 発光装置および電子機器
KR101433680B1 (ko) * 2005-12-02 2014-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 디스플레이 장치, 및 전자 장치
JP5250960B2 (ja) * 2006-01-24 2013-07-31 セイコーエプソン株式会社 発光装置および電子機器
KR20070092455A (ko) 2006-03-10 2007-09-13 삼성전자주식회사 표시 장치 및 그 제조 방법
JP5026019B2 (ja) * 2006-08-08 2012-09-12 三菱電機株式会社 薄膜トランジスタ基板、薄膜トランジスタの製造方法、及び表示装置
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6122275B2 (ja) * 2011-11-11 2017-04-26 株式会社半導体エネルギー研究所 表示装置
JP6056175B2 (ja) * 2012-04-03 2017-01-11 セイコーエプソン株式会社 電気光学装置及び電子機器
US9905585B2 (en) * 2012-12-25 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising capacitor
KR102479472B1 (ko) * 2013-04-15 2022-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치
JP5979272B2 (ja) * 2015-04-07 2016-08-24 セイコーエプソン株式会社 発光装置および電子機器
JP6702492B2 (ja) * 2019-09-02 2020-06-03 セイコーエプソン株式会社 電気光学装置及び電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04313729A (ja) * 1991-04-09 1992-11-05 Mitsubishi Electric Corp 液晶表示装置
US5550066A (en) * 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
JP3383535B2 (ja) * 1995-12-14 2003-03-04 株式会社半導体エネルギー研究所 半導体装置
JPH1027913A (ja) * 1996-07-09 1998-01-27 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH11231805A (ja) * 1998-02-10 1999-08-27 Sanyo Electric Co Ltd 表示装置
DE69925216T2 (de) * 1998-03-12 2005-10-06 Seiko Epson Corp. Aktivmatrix-lichtemittierende vorrichtung und herstellungsverfahren
JP3807096B2 (ja) * 1998-05-15 2006-08-09 セイコーエプソン株式会社 アクティブマトリクス基板及びこれを備えた電気光学パネル

Also Published As

Publication number Publication date
JP2001318628A (ja) 2001-11-16

Similar Documents

Publication Publication Date Title
JP4776792B2 (ja) 発光装置および電気器具
KR100688049B1 (ko) 전자 디바이스
JP3656819B2 (ja) Ｅｌ表示装置
JP4780826B2 (ja) 電気光学装置の作製方法
CN1400673B (zh) 电光装置和电子设备
JP4730994B2 (ja) 電気光学装置及びその作製方法並びに電子装置
JP3904807B2 (ja) 表示装置
JP2006228744A (ja) カーオーディオ、表示装置及び携帯情報端末
JP2006011454A (ja) 電気光学装置及び電子装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110223

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110314

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110621

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110629

R150 Certificate of patent or registration of utility model

Ref document number: 4776792

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140708

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140708

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term