JP4771714B2 - パターン検査装置および方法 - Google Patents

パターン検査装置および方法 Download PDF

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Publication number
JP4771714B2
JP4771714B2 JP2005039871A JP2005039871A JP4771714B2 JP 4771714 B2 JP4771714 B2 JP 4771714B2 JP 2005039871 A JP2005039871 A JP 2005039871A JP 2005039871 A JP2005039871 A JP 2005039871A JP 4771714 B2 JP4771714 B2 JP 4771714B2
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Japan
Prior art keywords
pattern
inspection
image
edge
defect
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JP2005039871A
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Japanese (ja)
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JP2005277395A (ja
JP2005277395A5 (enrdf_load_stackoverflow
Inventor
正 北村
和文 久保田
伸一 中澤
ヴォーラ ニーティー
昌宏 山本
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Tasmit Inc
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NGR Inc
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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Image Processing (AREA)
  • Image Analysis (AREA)
JP2005039871A 2004-02-23 2005-02-16 パターン検査装置および方法 Expired - Fee Related JP4771714B2 (ja)

Priority Applications (1)

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JP2005039871A JP4771714B2 (ja) 2004-02-23 2005-02-16 パターン検査装置および方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004047098 2004-02-23
JP2004047098 2004-02-23
JP2005039871A JP4771714B2 (ja) 2004-02-23 2005-02-16 パターン検査装置および方法

Related Child Applications (1)

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JP2010188301A Division JP4827269B2 (ja) 2004-02-23 2010-08-25 パターン検査装置および方法

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JP2005277395A JP2005277395A (ja) 2005-10-06
JP2005277395A5 JP2005277395A5 (enrdf_load_stackoverflow) 2008-03-27
JP4771714B2 true JP4771714B2 (ja) 2011-09-14

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103071B2 (en) 2016-11-04 2018-10-16 Samsung Electronics Co., Ltd. Pattern inspection methods and methods of fabricating reticles using the same via directing charged particle beams through discharge layers
US11468555B2 (en) 2018-03-30 2022-10-11 Tasmit, Inc. Method and apparatus for generating a correction line indicating relationship between deviation of an edge of a wafer pattern from an edge of a reference pattern and space width of the reference pattern, and a computer-readable recording medium

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Publication number Priority date Publication date Assignee Title
JP4787673B2 (ja) * 2005-05-19 2011-10-05 株式会社Ngr パターン検査装置および方法
JP4824987B2 (ja) * 2005-10-28 2011-11-30 株式会社日立ハイテクノロジーズ パターンマッチング装置およびそれを用いた半導体検査システム
KR101682838B1 (ko) * 2005-11-18 2016-12-12 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
JP5196723B2 (ja) * 2005-12-14 2013-05-15 株式会社ジャパンディスプレイウェスト 欠陥修正装置及び欠陥修正方法
JP5058489B2 (ja) 2006-01-25 2012-10-24 株式会社荏原製作所 試料表面検査装置及び検査方法
JP4851253B2 (ja) * 2006-07-05 2012-01-11 株式会社ニューフレアテクノロジー 描画装置、及び描画装置におけるエラー検出方法
JP5010207B2 (ja) 2006-08-14 2012-08-29 株式会社日立ハイテクノロジーズ パターン検査装置及び半導体検査システム
JP4909729B2 (ja) * 2006-12-13 2012-04-04 株式会社東芝 検査データ作成方法および検査方法
JP5153212B2 (ja) 2007-06-07 2013-02-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5321775B2 (ja) 2007-07-30 2013-10-23 株式会社東芝 パターン検査方法およびパターン検査装置
JP4659004B2 (ja) 2007-08-10 2011-03-30 株式会社日立ハイテクノロジーズ 回路パターン検査方法、及び回路パターン検査システム
JP5075646B2 (ja) 2008-01-09 2012-11-21 株式会社日立ハイテクノロジーズ 半導体欠陥検査装置ならびにその方法
JP5065943B2 (ja) 2008-02-29 2012-11-07 株式会社日立ハイテクノロジーズ 製造プロセスモニタリングシステム
JP2009252959A (ja) 2008-04-04 2009-10-29 Toshiba Corp パターン検査装置、パターン検査方法および半導体装置の製造方法
JP5114302B2 (ja) 2008-06-12 2013-01-09 株式会社日立ハイテクノロジーズ パターン検査方法,パターン検査装置及びパターン処理装置
US20120092482A1 (en) * 2009-04-03 2012-04-19 Shinichi Shinoda Method and device for creating composite image
JP5400882B2 (ja) 2009-06-30 2014-01-29 株式会社日立ハイテクノロジーズ 半導体検査装置及びそれを用いた半導体検査方法
JP5010701B2 (ja) * 2010-03-17 2012-08-29 株式会社ニューフレアテクノロジー 検査装置および検査方法
JP5254270B2 (ja) 2010-04-09 2013-08-07 株式会社ニューフレアテクノロジー 検査方法および検査装置
JP5604208B2 (ja) * 2010-07-28 2014-10-08 株式会社日立ハイテクノロジーズ 欠陥検出装置及びコンピュータプログラム
JP5603720B2 (ja) * 2010-09-13 2014-10-08 新日本工機株式会社 検査画像の生成方法、それを用いた画像検査方法、並びに外観検査装置
JP7188870B2 (ja) * 2017-05-31 2022-12-13 株式会社キーエンス 画像検査装置
US10957033B2 (en) * 2017-07-10 2021-03-23 Kla-Tencor Corporation Repeater defect detection
JP7042118B2 (ja) * 2018-03-08 2022-03-25 株式会社東芝 検査装置、検査方法、及びプログラム
JP7157580B2 (ja) * 2018-07-19 2022-10-20 東京エレクトロン株式会社 基板検査方法及び基板検査装置
JP7237872B2 (ja) 2020-02-14 2023-03-13 株式会社東芝 検査装置、検査方法、及びプログラム
JP7273748B2 (ja) 2020-02-28 2023-05-15 株式会社東芝 検査装置、検査方法、及びプログラム
JP7627101B2 (ja) * 2020-10-06 2025-02-05 東レエンジニアリング株式会社 外観検査装置および方法
CN113096119B (zh) * 2021-04-30 2024-06-07 上海众壹云计算科技有限公司 晶圆缺陷分类的方法、装置、电子设备以及存储介质
KR102844222B1 (ko) * 2021-12-02 2025-08-07 세메스 주식회사 반도체 소자 검사 장치 및 이를 이용한 반도체 소자 검사 방법
CN118658046B (zh) * 2024-08-19 2024-10-29 安徽高哲信息技术有限公司 多视角谷物图像处理方法、存储介质和电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6408219B2 (en) * 1998-05-11 2002-06-18 Applied Materials, Inc. FAB yield enhancement system
JP3524853B2 (ja) * 1999-08-26 2004-05-10 株式会社ナノジオメトリ研究所 パターン検査装置、パターン検査方法および記録媒体
JP2002310929A (ja) * 2001-04-13 2002-10-23 Mitsubishi Electric Corp 欠陥検査装置
JP3870052B2 (ja) * 2001-09-20 2007-01-17 株式会社日立製作所 半導体装置の製造方法及び欠陥検査データ処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103071B2 (en) 2016-11-04 2018-10-16 Samsung Electronics Co., Ltd. Pattern inspection methods and methods of fabricating reticles using the same via directing charged particle beams through discharge layers
US11468555B2 (en) 2018-03-30 2022-10-11 Tasmit, Inc. Method and apparatus for generating a correction line indicating relationship between deviation of an edge of a wafer pattern from an edge of a reference pattern and space width of the reference pattern, and a computer-readable recording medium

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JP2005277395A (ja) 2005-10-06

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