JP4758846B2 - 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム - Google Patents

乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム Download PDF

Info

Publication number
JP4758846B2
JP4758846B2 JP2006216464A JP2006216464A JP4758846B2 JP 4758846 B2 JP4758846 B2 JP 4758846B2 JP 2006216464 A JP2006216464 A JP 2006216464A JP 2006216464 A JP2006216464 A JP 2006216464A JP 4758846 B2 JP4758846 B2 JP 4758846B2
Authority
JP
Japan
Prior art keywords
supply
drying
carrier gas
mixed fluid
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006216464A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007165833A (ja
Inventor
裕司 田中
秀俊 中尾
尚樹 新藤
敦 山下
司 平山
広太郎 鶴崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006216464A priority Critical patent/JP4758846B2/ja
Priority to US11/594,232 priority patent/US7581335B2/en
Priority to KR1020060111687A priority patent/KR101061926B1/ko
Priority to TW095142662A priority patent/TW200731386A/zh
Publication of JP2007165833A publication Critical patent/JP2007165833A/ja
Application granted granted Critical
Publication of JP4758846B2 publication Critical patent/JP4758846B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H10P72/0406—
    • H10P52/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H10P72/0408—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
JP2006216464A 2005-11-18 2006-08-09 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム Expired - Fee Related JP4758846B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006216464A JP4758846B2 (ja) 2005-11-18 2006-08-09 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム
US11/594,232 US7581335B2 (en) 2005-11-18 2006-11-08 Substrate drying processing apparatus, method, and program recording medium
KR1020060111687A KR101061926B1 (ko) 2005-11-18 2006-11-13 건조 장치, 건조 방법, 기판 처리 장치, 기판 처리 방법,프로그램이 기록된 컴퓨터 판독가능한 기록 매체
TW095142662A TW200731386A (en) 2005-11-18 2006-11-17 Drying device, drying method, substrate treating device, substrate treating method and computer readable recording medium having program

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005334538 2005-11-18
JP2005334538 2005-11-18
JP2006216464A JP4758846B2 (ja) 2005-11-18 2006-08-09 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム

Publications (2)

Publication Number Publication Date
JP2007165833A JP2007165833A (ja) 2007-06-28
JP4758846B2 true JP4758846B2 (ja) 2011-08-31

Family

ID=38052054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006216464A Expired - Fee Related JP4758846B2 (ja) 2005-11-18 2006-08-09 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム

Country Status (4)

Country Link
US (1) US7581335B2 (OSRAM)
JP (1) JP4758846B2 (OSRAM)
KR (1) KR101061926B1 (OSRAM)
TW (1) TW200731386A (OSRAM)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4758846B2 (ja) * 2005-11-18 2011-08-31 東京エレクトロン株式会社 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム
US20080155852A1 (en) * 2006-12-29 2008-07-03 Olgado Donald J K Multiple substrate vapor drying systems and methods
JP4805862B2 (ja) * 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
JP5104174B2 (ja) * 2007-10-01 2012-12-19 富士通株式会社 洗浄乾燥装置及び洗浄乾燥方法
KR100921520B1 (ko) * 2007-10-05 2009-10-12 세메스 주식회사 척 세정 장치 및 방법 그리고 이를 구비하는 기판 처리장치 및 그의 척 세정 방법
JP5122371B2 (ja) * 2008-05-26 2013-01-16 東京エレクトロン株式会社 基板処理装置、基板処理方法、プログラムならびに記憶媒体
US20110186088A1 (en) * 2010-01-31 2011-08-04 Miller Kenneth C Substrate nest with drip remover
JP5522028B2 (ja) * 2010-03-09 2014-06-18 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
DE202011110123U1 (de) * 2011-11-29 2013-02-21 Rena Gmbh Vorrichtung zum Trocknen von Substraten
US9254510B2 (en) * 2012-02-03 2016-02-09 Stmicroelectronics, Inc. Drying apparatus with exhaust control cap for semiconductor wafers and associated methods
CN103377972B (zh) * 2012-04-30 2016-12-28 细美事有限公司 基板处理装置和供给处理溶液的方法
KR101430750B1 (ko) * 2012-04-30 2014-08-14 세메스 주식회사 기판 처리 장치 및 이의 처리 유체 공급 방법
JP6454470B2 (ja) * 2013-03-14 2019-01-16 東京エレクトロン株式会社 乾燥装置及び乾燥処理方法
US9829249B2 (en) * 2015-03-10 2017-11-28 Mei, Llc Wafer dryer apparatus and method
JP6430870B2 (ja) * 2015-03-20 2018-11-28 東京エレクトロン株式会社 クランプ装置及びこれを用いた基板搬入出装置、並びに基板処理装置
US9810480B2 (en) * 2015-06-12 2017-11-07 Targeted Microwave Solutions Inc. Methods and apparatus for electromagnetic processing of phyllosilicate minerals
CN205561438U (zh) * 2016-03-23 2016-09-07 常州捷佳创精密机械有限公司 一种槽式烘干结构
US10656525B2 (en) * 2017-09-01 2020-05-19 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Photoresist baking apparatus
US10890377B2 (en) * 2018-05-01 2021-01-12 Rochester Institute Of Technology Volcano-shaped enhancement features for enhanced pool boiling
US10801777B2 (en) * 2018-09-30 2020-10-13 HKC Corporation Limited Baking device
TWI792146B (zh) * 2021-01-07 2023-02-11 弘塑科技股份有限公司 晶圓浸泡清洗裝置
CN118009647B (zh) * 2024-04-09 2024-06-07 常州比太科技有限公司 一种硅片生产烘干装置及其烘干方法

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2174170A (en) * 1936-05-05 1939-09-26 Celluloid Corp Manufacture of stiffening material
US2376095A (en) * 1942-10-15 1945-05-15 Davison Chemical Corp Dehydrating process
US2443443A (en) * 1943-09-22 1948-06-15 Chavannes Marc Alfred Apparatus for producing films
US3218728A (en) * 1963-04-08 1965-11-23 Fmc Corp Low pressure carrier gas sublimation
US3396477A (en) * 1966-11-07 1968-08-13 Pillsbury Co Agglomerating apparatus
AU511678B2 (en) * 1977-08-29 1980-08-28 Airco Inc. Recovering solvents from drying ovens
US4497121A (en) * 1981-05-04 1985-02-05 Polaroid Corporation Process simulator
US4876802A (en) * 1983-12-21 1989-10-31 Gerhard Gergely Process and means for the heat treatment of powdery or granulate material
US4736758A (en) * 1985-04-15 1988-04-12 Wacom Co., Ltd. Vapor drying apparatus
LU86156A1 (fr) * 1985-11-12 1987-06-26 Xrg Systems Procede et dispositif pour extraire des liquides d'agregate et de melanges gaz-vapeur
US5105557A (en) * 1991-03-11 1992-04-21 Vadasz Jozsef T System for rapidly drying parts
US5361514A (en) * 1991-10-30 1994-11-08 Westinghouse Electric Corporation Removal of volatile and semi-volatile contaminants from solids using thermal desorption and gas transport at the solids entrance
US5675909A (en) * 1992-02-10 1997-10-14 Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Environment Microwave-assisted separations using volatiles
US5732476A (en) * 1992-02-10 1998-03-31 Pare; J.R. Jocelyn Microwave-assisted separations using volatiles, and apparatus therefor
JP3003016B2 (ja) * 1992-12-25 2000-01-24 東京エレクトロン株式会社 処理装置及び処理方法
JP3347814B2 (ja) * 1993-05-17 2002-11-20 大日本スクリーン製造株式会社 基板の洗浄・乾燥処理方法並びにその処理装置
US5571337A (en) * 1994-11-14 1996-11-05 Yieldup International Method for cleaning and drying a semiconductor wafer
US5634978A (en) * 1994-11-14 1997-06-03 Yieldup International Ultra-low particle semiconductor method
US5964958A (en) * 1995-06-07 1999-10-12 Gary W. Ferrell Methods for drying and cleaning objects using aerosols
US5752532A (en) * 1995-08-17 1998-05-19 Schwenkler; Robert S. Method for the precision cleaning and drying surfaces
US5715612A (en) * 1995-08-17 1998-02-10 Schwenkler; Robert S. Method for precision drying surfaces
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
KR980012044A (ko) * 1996-03-01 1998-04-30 히가시 데츠로 기판건조장치 및 기판건조방법
DE19654043C2 (de) * 1996-12-23 1998-05-28 Martin Dipl Ing Knabe Trockner mit Abgasreinigung mittels thermischer Nachverbrennung
US5906862A (en) * 1997-04-02 1999-05-25 Minnesota Mining And Manufacturing Company Apparatus and method for drying a coating on a substrate
JP3151613B2 (ja) * 1997-06-17 2001-04-03 東京エレクトロン株式会社 洗浄・乾燥処理方法及びその装置
US6695926B1 (en) * 1997-07-09 2004-02-24 Ses Co., Ltd. Treatment method of semiconductor wafers and the like and treatment system for the same
JP3341148B2 (ja) 1997-12-19 2002-11-05 東京エレクトロン株式会社 洗浄・乾燥処理装置及び洗浄・乾燥処理方法
JP3897404B2 (ja) * 1997-07-22 2007-03-22 オメガセミコン電子株式会社 ベーパ乾燥装置及び乾燥方法
US6131307A (en) * 1997-08-07 2000-10-17 Tokyo Electron Limited Method and device for controlling pressure and flow rate
US5884640A (en) * 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
US5913981A (en) * 1998-03-05 1999-06-22 Micron Technology, Inc. Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall
US6158141A (en) * 1998-05-07 2000-12-12 Sony Corporation Apparatus and method for drying semiconductor substrate
US6207020B1 (en) * 1998-05-12 2001-03-27 International Paper Company Method for conditioning paper and paperboard webs
US6216709B1 (en) * 1998-09-04 2001-04-17 Komag, Inc. Method for drying a substrate
TW442836B (en) * 1998-11-24 2001-06-23 Toho Kasei Co Ltd Wafer drying device and method
US6128830A (en) * 1999-05-15 2000-10-10 Dean Bettcher Apparatus and method for drying solid articles
US6729040B2 (en) * 1999-05-27 2004-05-04 Oliver Design, Inc. Apparatus and method for drying a substrate using hydrophobic and polar organic compounds
WO2000074113A1 (en) * 1999-05-27 2000-12-07 Lam Research Corporation Wafer drying apparatus and method
US6625901B1 (en) * 1999-05-27 2003-09-30 Oliver Design, Inc. Apparatus and method for drying a thin substrate
NZ518014A (en) * 1999-10-21 2004-02-27 Aspen Systems Inc Rapid aerogel production process comprising the application of pressure pulses to hasten the exchange of fluids within the gel
EP1265643B1 (en) * 2000-01-10 2004-07-28 Honeywell International Inc. Method for the fumigation of closed systems
US6286231B1 (en) * 2000-01-12 2001-09-11 Semitool, Inc. Method and apparatus for high-pressure wafer processing and drying
WO2001053766A1 (en) * 2000-01-17 2001-07-26 Toho Kasei Co., Ltd. Method and device for drying substrate
US20040250700A1 (en) * 2000-04-19 2004-12-16 Renaud Regis Phillip Method and apparatus for treating refuse with steam
US20020069899A1 (en) * 2000-06-26 2002-06-13 Verhaverbeke Steven Verhaverbeke Method and apparatus for removing adhered moisture form a wafer
JP4069316B2 (ja) * 2000-07-24 2008-04-02 東京エレクトロン株式会社 洗浄処理方法および洗浄処理装置
KR100417040B1 (ko) * 2000-08-03 2004-02-05 삼성전자주식회사 웨이퍼를 건조시키기 위한 방법 및 이를 수행하기 위한웨이퍼 건조장치
JP3837016B2 (ja) * 2000-09-28 2006-10-25 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
US6401361B1 (en) * 2000-11-15 2002-06-11 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for drying wafers by a solvent
WO2002075784A2 (en) * 2001-03-15 2002-09-26 Akrion Llc Drying vapor generation
KR100435808B1 (ko) * 2001-06-26 2004-06-10 삼성전자주식회사 마란고니 방식 웨이퍼 건조 방법 및 그 방법에 적합한 장치
KR20080095310A (ko) * 2001-11-02 2008-10-28 어플라이드 머티어리얼스, 인코포레이티드 미세 전자 소자의 세정 방법
US7513062B2 (en) * 2001-11-02 2009-04-07 Applied Materials, Inc. Single wafer dryer and drying methods
KR100456527B1 (ko) * 2001-12-11 2004-11-09 삼성전자주식회사 마란고니 효과를 증대시키기 위한 건조 장비 및 건조 방법
JP3684356B2 (ja) * 2002-03-05 2005-08-17 株式会社カイジョー 洗浄物の乾燥装置及び乾燥方法
JP3939178B2 (ja) * 2002-03-25 2007-07-04 大日本スクリーン製造株式会社 高圧乾燥装置、高圧乾燥方法および基板処理装置
US6988327B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Methods and systems for processing a substrate using a dynamic liquid meniscus
KR100493849B1 (ko) * 2002-09-30 2005-06-08 삼성전자주식회사 웨이퍼 건조 장치
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
AT412999B (de) * 2002-11-12 2005-09-26 Wiedl Alfred Anlage zum trocknen von gütern
JP2004198066A (ja) * 2002-12-20 2004-07-15 Matsui Mfg Co 粉粒体材料の乾燥貯留装置及び粉粒体材料の供給システム
JP3592702B1 (ja) * 2003-08-12 2004-11-24 エス・イー・エス株式会社 基板処理方法及び基板処理装置
US6928748B2 (en) * 2003-10-16 2005-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Method to improve post wafer etch cleaning process
KR100564582B1 (ko) * 2003-10-28 2006-03-29 삼성전자주식회사 전자 소자 기판의 표면 처리 장치 및 이를 이용한 표면처리 방법
JP4357943B2 (ja) * 2003-12-02 2009-11-04 エス・イー・エス株式会社 基板処理法及び基板処理装置
US7181863B2 (en) * 2004-03-09 2007-02-27 Sez America, Inc. Wafer dryer and method for drying a wafer
CN100573826C (zh) * 2004-04-02 2009-12-23 东京毅力科创株式会社 基板处理装置、基板处理方法、记录介质以及软件
US7637029B2 (en) * 2005-07-08 2009-12-29 Tokyo Electron Limited Vapor drying method, apparatus and recording medium for use in the method
JP4758846B2 (ja) * 2005-11-18 2011-08-31 東京エレクトロン株式会社 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム
JP4812563B2 (ja) * 2006-08-29 2011-11-09 大日本スクリーン製造株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
TWI361455B (OSRAM) 2012-04-01
JP2007165833A (ja) 2007-06-28
KR101061926B1 (ko) 2011-09-02
US7581335B2 (en) 2009-09-01
TW200731386A (en) 2007-08-16
US20070113423A1 (en) 2007-05-24
KR20070053112A (ko) 2007-05-23

Similar Documents

Publication Publication Date Title
JP4758846B2 (ja) 乾燥装置、乾燥方法、及び乾燥プログラム、並びに、これらを有する基板処理装置、基板処理方法、及び基板処理プログラム
KR101390900B1 (ko) 기판처리장치
CN110828332B (zh) 基片处理装置的颗粒除去方法和基片处理装置
CN101271833B (zh) 基板处理装置
KR101506203B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP6707412B2 (ja) 基板液処理装置、基板液処理方法および記憶媒体
CN108962793B (zh) 使用磷酸水溶液的蚀刻处理控制装置、方法以及存储介质
JP3837026B2 (ja) 基板洗浄装置及び基板洗浄方法
TW202125678A (zh) 基板處理裝置及基板處理方法
CN109698142B (zh) 基板处理装置、基板处理方法以及存储介质
CN107579020B (zh) 基板液处理装置、基板液处理方法以及存储介质
JP6441198B2 (ja) 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
KR20180127217A (ko) 기판 처리 장치
KR102559412B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
US6620260B2 (en) Substrate rinsing and drying method
KR102530228B1 (ko) 기판 액처리 장치 및 기판 액처리 방법, 및 기판 액처리 프로그램을 기억한 컴퓨터 판독 가능한 기억 매체
JP2004321971A (ja) 洗浄装置および基板処理装置
WO2006033186A1 (ja) 基板処理装置
KR102611293B1 (ko) 기판 액처리 장치, 기판 액처리 방법 및 기억 매체
JP2002050600A (ja) 基板処理方法及び基板処理装置
KR101870660B1 (ko) 기판처리장치 및 기판처리방법
JP7321052B2 (ja) 基板処理装置および装置洗浄方法
JP7339044B2 (ja) 基板処理装置、基板処理システム及び基板処理方法
KR20130116850A (ko) 기판처리장치 및 기판처리방법
JP2018148245A (ja) リン酸水溶液を用いたエッチング処理制御装置及びリン酸水溶液を用いたエッチング処理制御方法並びに基板をリン酸水溶液でエッチング処理させるプログラムを記憶したコンピュータ読み取り可能な記憶媒体

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090113

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101019

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101102

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101224

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110531

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110603

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4758846

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140610

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees