JP4752825B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4752825B2
JP4752825B2 JP2007217876A JP2007217876A JP4752825B2 JP 4752825 B2 JP4752825 B2 JP 4752825B2 JP 2007217876 A JP2007217876 A JP 2007217876A JP 2007217876 A JP2007217876 A JP 2007217876A JP 4752825 B2 JP4752825 B2 JP 4752825B2
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JP
Japan
Prior art keywords
layer
insulating film
semiconductor device
wiring
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007217876A
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English (en)
Japanese (ja)
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JP2009054666A (ja
Inventor
裕康 定別当
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
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Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP2007217876A priority Critical patent/JP4752825B2/ja
Priority to US12/194,846 priority patent/US7727862B2/en
Priority to KR1020107003112A priority patent/KR101167384B1/ko
Priority to CN200880104037.1A priority patent/CN101785106B/zh
Priority to TW097131903A priority patent/TW200917395A/zh
Priority to PCT/JP2008/065348 priority patent/WO2009028578A2/en
Publication of JP2009054666A publication Critical patent/JP2009054666A/ja
Priority to US12/729,608 priority patent/US8063490B2/en
Application granted granted Critical
Publication of JP4752825B2 publication Critical patent/JP4752825B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9413—Dispositions of bond pads on encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
JP2007217876A 2007-08-24 2007-08-24 半導体装置の製造方法 Expired - Fee Related JP4752825B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2007217876A JP4752825B2 (ja) 2007-08-24 2007-08-24 半導体装置の製造方法
US12/194,846 US7727862B2 (en) 2007-08-24 2008-08-20 Semiconductor device including semiconductor constituent and manufacturing method thereof
CN200880104037.1A CN101785106B (zh) 2007-08-24 2008-08-21 包括半导体组件的半导体装置及其制造方法
TW097131903A TW200917395A (en) 2007-08-24 2008-08-21 Semiconductor device and manufacturing method thereof
KR1020107003112A KR101167384B1 (ko) 2007-08-24 2008-08-21 반도체 구성요소를 구비한 반도체 장치 및 그 제조 방법
PCT/JP2008/065348 WO2009028578A2 (en) 2007-08-24 2008-08-21 Semiconductor device including semiconductor constituent and manufacturing method thereof
US12/729,608 US8063490B2 (en) 2007-08-24 2010-03-23 Semiconductor device including semiconductor constituent

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007217876A JP4752825B2 (ja) 2007-08-24 2007-08-24 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011110928A Division JP2011155313A (ja) 2011-05-18 2011-05-18 半導体装置

Publications (2)

Publication Number Publication Date
JP2009054666A JP2009054666A (ja) 2009-03-12
JP4752825B2 true JP4752825B2 (ja) 2011-08-17

Family

ID=40340690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007217876A Expired - Fee Related JP4752825B2 (ja) 2007-08-24 2007-08-24 半導体装置の製造方法

Country Status (6)

Country Link
US (2) US7727862B2 (enExample)
JP (1) JP4752825B2 (enExample)
KR (1) KR101167384B1 (enExample)
CN (1) CN101785106B (enExample)
TW (1) TW200917395A (enExample)
WO (1) WO2009028578A2 (enExample)

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EP2244288A4 (en) * 2008-02-14 2011-11-02 Mitsubishi Heavy Ind Ltd SEMICONDUCTOR ELEMENT MODULE AND METHOD FOR THE PRODUCTION THEREOF
US7989950B2 (en) * 2008-08-14 2011-08-02 Stats Chippac Ltd. Integrated circuit packaging system having a cavity
US8535989B2 (en) 2010-04-02 2013-09-17 Intel Corporation Embedded semiconductive chips in reconstituted wafers, and systems containing same
US9570376B2 (en) 2010-06-29 2017-02-14 General Electric Company Electrical interconnect for an integrated circuit package and method of making same
US8653670B2 (en) * 2010-06-29 2014-02-18 General Electric Company Electrical interconnect for an integrated circuit package and method of making same
US8937382B2 (en) 2011-06-27 2015-01-20 Intel Corporation Secondary device integration into coreless microelectronic device packages
US8848380B2 (en) 2011-06-30 2014-09-30 Intel Corporation Bumpless build-up layer package warpage reduction
US9257368B2 (en) 2012-05-14 2016-02-09 Intel Corporation Microelectric package utilizing multiple bumpless build-up structures and through-silicon vias
DE112012006469B4 (de) 2012-06-08 2022-05-05 Intel Corporation Mikroelektronisches Gehäuse mit nicht komplanaren gekapselten mikroelektronischen Bauelementen und einer Aufbauschicht ohne Kontaktierhügel
US8853058B2 (en) * 2012-06-22 2014-10-07 Freescale Semiconductor, Inc. Method of making surface mount stacked semiconductor devices
CN103889168A (zh) * 2012-12-21 2014-06-25 宏启胜精密电子(秦皇岛)有限公司 承载电路板、承载电路板的制作方法及封装结构
US8836094B1 (en) * 2013-03-14 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package device including an opening in a flexible substrate and methods of forming the same
JP6695066B2 (ja) * 2014-11-27 2020-05-20 ツーハイ アクセス セミコンダクター カンパニー リミテッド フレームがコンデンサと直列に少なくとも１個のビアを備えるようなチップ用のポリマーフレーム
US10276467B2 (en) 2016-03-25 2019-04-30 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package
US10068855B2 (en) * 2016-09-12 2018-09-04 Samsung Electro-Mechanics Co., Ltd. Semiconductor package, method of manufacturing the same, and electronic device module
WO2018096830A1 (ja) * 2016-11-28 2018-05-31 株式会社村田製作所 電子部品及びその製造方法
CN110050338B (zh) 2016-12-07 2023-02-28 株式会社村田制作所 电子部件及其制造方法
CN110036472A (zh) * 2016-12-08 2019-07-19 日立化成株式会社 半导体装置的制造方法
KR102540829B1 (ko) * 2018-10-05 2023-06-08 삼성전자주식회사 반도체 패키지, 반도체 패키지 제조방법 및 재배선 구조체 제조방법
KR102568705B1 (ko) * 2018-10-05 2023-08-22 삼성전자주식회사 반도체 패키지, 반도체 패키지 제조방법 및 재배선 구조체 제조방법
US10818569B2 (en) 2018-12-04 2020-10-27 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor device and a method of manufacturing a semiconductor device
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CN113555326A (zh) * 2021-06-03 2021-10-26 珠海越亚半导体股份有限公司 可润湿侧面的封装结构与其制作方法及垂直封装模块
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Also Published As

Publication number Publication date
US8063490B2 (en) 2011-11-22
CN101785106A (zh) 2010-07-21
US20100193938A1 (en) 2010-08-05
TW200917395A (en) 2009-04-16
TWI378519B (enExample) 2012-12-01
KR101167384B1 (ko) 2012-07-19
WO2009028578A8 (en) 2009-11-26
JP2009054666A (ja) 2009-03-12
US7727862B2 (en) 2010-06-01
WO2009028578A2 (en) 2009-03-05
CN101785106B (zh) 2012-05-30
KR20100038232A (ko) 2010-04-13
US20090051038A1 (en) 2009-02-26
WO2009028578A3 (en) 2009-05-14

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