JP4749978B2 - 光検出器が集積可能な光結合装置 - Google Patents
光検出器が集積可能な光結合装置 Download PDFInfo
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- JP4749978B2 JP4749978B2 JP2006241952A JP2006241952A JP4749978B2 JP 4749978 B2 JP4749978 B2 JP 4749978B2 JP 2006241952 A JP2006241952 A JP 2006241952A JP 2006241952 A JP2006241952 A JP 2006241952A JP 4749978 B2 JP4749978 B2 JP 4749978B2
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- photodetector
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- 238000005530 etching Methods 0.000 claims description 46
- 238000010168 coupling process Methods 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 41
- 230000008878 coupling Effects 0.000 claims description 40
- 238000005859 coupling reaction Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 27
- 239000002131 composite material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910020203 CeO Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 34
- 230000035945 sensitivity Effects 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000012792 core layer Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
- G02B6/4203—Optical features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Description
工程から再成長過程を省略できるようにすることが可能である。
全反射面51/無反射面52はフォトリソグラフィを用いて選択的に製作することができる。コーティングの厚さは各物質の屈折率と入射光の波長および入射角によって決定され、一例としてSiO2/TiO2を用いた無反射膜の場合、1.55μm波長光の垂直入射に対してコーティングの厚さは約2000オングストロームである。
光検出器層41に減衰場を介して結合し(evanescently coupled)、IDT電極44を有するMSM(metal-semiconductor-metal)光検出器40に吸収される。側面入射型光検出器としては、MSM光検出器の他にも導波路型p−i−n光検出器、導波路型アバランシェ光検出器、分布された速度接合型光検出器(VMDP)、周期的配列型単一走行キャリア光検出器(p−UTC−PD)などの構造で製作することが可能である。
前述したようなエッチング方式によってエッチングされ、無反射コーティングができる。
21 上部クラッド層
22 コア層
23 下部クラッド層
30、160 光検出器
31 コレクタ層
32 光吸収層
33 p−接合層
36 n−電極
37 p−電極
41 光検出器層
51、151、153、154 全反射面
52、152 無反射面
Claims (6)
- 所定の領域上に表面入射型光検出器が装着される基板と、
前記基板に入射される入射光を通過させるように前記基板と平行に形成された第1無反射面、
入射した光が第1の所定角で全反射されて前記光検出器に伝達されるように前記基板内にコーティングされた第1全反射面、前記光検出器に吸収されずに反射された光を伝達するために前記基板内にコーティングされた第2全反射面、および、前記第2全反射面から伝達された光を再度前記第2全反射面を経て前記光検出器に伝達されるように前記基板と平行に形成された第3全反射面を備えたエッチング構造複合体を含み、
外部から入射した光は、前記第1無反射面を通過し、前記第1全反射面で反射されて前記光検出器へ伝達されて吸収され、
前記光検出器に吸収されずに反射された光は、前記第2全反射面を経て前記第3全反射面に伝達され、前記第3全反射面から反射された光は前記第2全反射面を経て逆経路で前記光検出器に再吸収されることを特徴とする光検出器が集積可能な光結合装置。 - 前記全反射面にはAu、Agなどの金属膜、SiOx、SiNx、CeO2、CeF3、SiO2、TiO2、MgF2、ZnSなどの単一誘電体薄膜、またはこれらの組合せで構成される多重膜でコーティングすることを特徴とする請求項1記載の光検出器が集積可能な光結合装置。
- 前記無反射面にはSiOx、SiNx、CeO2、CeF3、SiO2、TiO2、MgF2、ZnSなどの誘電体薄膜を単一膜、二重膜またはそれ以上の多重膜でコーティングすることを特徴とする請求項1記載の光検出器が集積可能な光結合装置
- 前記基板がInP基板であることを特徴とする請求項1記載の光検出器が集積可能な光結合装置。
- 前記エッチング構造複合体は、前記InP基板をHBr系列またはHCl系列のエッチング液を用いてエッチングマスクの方向、エッチング方式の組合せによって傾斜角を有する傾斜面を製作することを特徴とする請求項4記載の光検出器が集積可能な光結合装置。
- 前記エッチング構造複合体は、前記光検出器と同一のエピー構造で製作することを特徴とする請求項1記載の光検出器が集積可能な光結合装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2003-085550 | 2003-11-28 | ||
KR1020030085550A KR100593307B1 (ko) | 2003-11-28 | 2003-11-28 | 광검출기가 집적 가능한 광결합 장치 |
Related Parent Applications (1)
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---|---|---|---|
JP2004087669A Division JP3917140B2 (ja) | 2003-11-28 | 2004-03-24 | 光検出器が集積可能な光結合装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007013202A JP2007013202A (ja) | 2007-01-18 |
JP4749978B2 true JP4749978B2 (ja) | 2011-08-17 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2004087669A Expired - Fee Related JP3917140B2 (ja) | 2003-11-28 | 2004-03-24 | 光検出器が集積可能な光結合装置 |
JP2006241952A Expired - Fee Related JP4749978B2 (ja) | 2003-11-28 | 2006-09-06 | 光検出器が集積可能な光結合装置 |
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JP2004087669A Expired - Fee Related JP3917140B2 (ja) | 2003-11-28 | 2004-03-24 | 光検出器が集積可能な光結合装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6992360B2 (ja) |
JP (2) | JP3917140B2 (ja) |
KR (1) | KR100593307B1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100754597B1 (ko) * | 2006-01-03 | 2007-09-05 | 삼성전자주식회사 | 광모드 크기 변환기 집적 레이저장치 및 그 제조방법 |
JP5297907B2 (ja) * | 2009-06-18 | 2013-09-25 | 浜松ホトニクス株式会社 | 光検出装置 |
US10115599B2 (en) | 2012-09-28 | 2018-10-30 | The Board Of Trustees Of The University Of Illinois | Spectrally and temporally engineered processing using photoelectrochemistry |
US9224882B2 (en) | 2013-08-02 | 2015-12-29 | Intel Corporation | Low voltage photodetectors |
CN103489953B (zh) * | 2013-09-09 | 2015-12-23 | 中国科学院半导体研究所 | 一种双步消逝场耦合的雪崩光电探测器 |
JP2015138145A (ja) * | 2014-01-22 | 2015-07-30 | 住友大阪セメント株式会社 | 光変調器 |
US9391700B1 (en) * | 2015-06-16 | 2016-07-12 | Sunlight Photonics Inc. | Integrated optical receiver skin |
US10830951B2 (en) * | 2016-11-02 | 2020-11-10 | National Institute Of Advanced Industrial Science And Technology | Optical circuit and optical device |
WO2018156516A1 (en) * | 2017-02-21 | 2018-08-30 | Newport Corporation | High responsivity high bandwidth photodiode and method of manufacture |
KR102093168B1 (ko) * | 2019-02-22 | 2020-03-25 | 이상환 | 이중 광경로를 가진 광 검출기 |
US11268849B2 (en) * | 2019-04-22 | 2022-03-08 | Applied Materials Israel Ltd. | Sensing unit having photon to electron converter and a method |
WO2021024371A1 (ja) * | 2019-08-06 | 2021-02-11 | 三菱電機株式会社 | 半導体レーザ装置 |
JP6918398B1 (ja) * | 2020-06-01 | 2021-08-18 | 株式会社京都セミコンダクター | 端面入射型半導体受光素子 |
WO2024142317A1 (ja) * | 2022-12-27 | 2024-07-04 | 日本電信電話株式会社 | 受光素子 |
WO2024176432A1 (ja) * | 2023-02-24 | 2024-08-29 | 日本電信電話株式会社 | 受光素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2601505B1 (fr) * | 1986-07-09 | 1988-11-10 | Labo Electronique Physique | Dispositif semiconducteur integre du type dispositif de couplage entre un photodetecteur et un guide d'onde lumineuse |
JPH0677518A (ja) * | 1992-08-26 | 1994-03-18 | Nec Corp | 半導体受光素子 |
US5391869A (en) * | 1993-03-29 | 1995-02-21 | United Technologies Corporation | Single-side growth reflection-based waveguide-integrated photodetector |
JPH1140823A (ja) * | 1997-05-22 | 1999-02-12 | Fujitsu Ltd | 光検出器モジュール |
JP2001320081A (ja) * | 2000-05-12 | 2001-11-16 | Fujitsu Ltd | 半導体受光素子 |
JP2002107559A (ja) * | 2000-09-27 | 2002-04-10 | Kyocera Corp | 光集積回路基板 |
-
2003
- 2003-11-28 KR KR1020030085550A patent/KR100593307B1/ko not_active IP Right Cessation
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2004
- 2004-03-19 US US10/803,885 patent/US6992360B2/en not_active Expired - Fee Related
- 2004-03-24 JP JP2004087669A patent/JP3917140B2/ja not_active Expired - Fee Related
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2006
- 2006-09-06 JP JP2006241952A patent/JP4749978B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2005165254A (ja) | 2005-06-23 |
JP3917140B2 (ja) | 2007-05-23 |
KR20050051882A (ko) | 2005-06-02 |
KR100593307B1 (ko) | 2006-06-26 |
JP2007013202A (ja) | 2007-01-18 |
US20050116311A1 (en) | 2005-06-02 |
US6992360B2 (en) | 2006-01-31 |
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