JP4742057B2 - 裏面照射型固体撮像素子 - Google Patents

裏面照射型固体撮像素子 Download PDF

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Publication number
JP4742057B2
JP4742057B2 JP2007040558A JP2007040558A JP4742057B2 JP 4742057 B2 JP4742057 B2 JP 4742057B2 JP 2007040558 A JP2007040558 A JP 2007040558A JP 2007040558 A JP2007040558 A JP 2007040558A JP 4742057 B2 JP4742057 B2 JP 4742057B2
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Japan
Prior art keywords
well
semiconductor substrate
type semiconductor
region
imaging device
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Expired - Fee Related
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JP2007040558A
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English (en)
Japanese (ja)
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JP2008205256A (ja
JP2008205256A5 (enExample
Inventor
眞司 宇家
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Fujifilm Corp
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Fujifilm Corp
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Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007040558A priority Critical patent/JP4742057B2/ja
Priority to US12/032,393 priority patent/US20080217724A1/en
Publication of JP2008205256A publication Critical patent/JP2008205256A/ja
Publication of JP2008205256A5 publication Critical patent/JP2008205256A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1532—Frame-interline transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2007040558A 2007-02-21 2007-02-21 裏面照射型固体撮像素子 Expired - Fee Related JP4742057B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007040558A JP4742057B2 (ja) 2007-02-21 2007-02-21 裏面照射型固体撮像素子
US12/032,393 US20080217724A1 (en) 2007-02-21 2008-02-15 Backside illuminated solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007040558A JP4742057B2 (ja) 2007-02-21 2007-02-21 裏面照射型固体撮像素子

Publications (3)

Publication Number Publication Date
JP2008205256A JP2008205256A (ja) 2008-09-04
JP2008205256A5 JP2008205256A5 (enExample) 2010-08-26
JP4742057B2 true JP4742057B2 (ja) 2011-08-10

Family

ID=39740794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007040558A Expired - Fee Related JP4742057B2 (ja) 2007-02-21 2007-02-21 裏面照射型固体撮像素子

Country Status (2)

Country Link
US (1) US20080217724A1 (enExample)
JP (1) JP4742057B2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7804113B2 (en) * 2006-09-08 2010-09-28 Sarnoff Corporation Anti-blooming structures for back-illuminated imagers
US7781715B2 (en) * 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
JP4799594B2 (ja) * 2008-08-19 2011-10-26 株式会社東芝 固体撮像装置およびその製造方法
US9041841B2 (en) * 2008-10-10 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor having enhanced backside illumination quantum efficiency
KR101786069B1 (ko) 2009-02-17 2017-10-16 가부시키가이샤 니콘 이면 조사형 촬상 소자, 그 제조 방법 및 촬상 장치
JP5453832B2 (ja) 2009-02-20 2014-03-26 ソニー株式会社 固体撮像装置および撮像装置
JP2010232387A (ja) * 2009-03-26 2010-10-14 Panasonic Corp 固体撮像素子
JP4741015B2 (ja) * 2009-03-27 2011-08-03 富士フイルム株式会社 撮像素子
JP2010251558A (ja) * 2009-04-16 2010-11-04 Toshiba Corp 固体撮像装置
US20100327390A1 (en) * 2009-06-26 2010-12-30 Mccarten John P Back-illuminated image sensor with electrically biased conductive material and backside well
JP2011129627A (ja) * 2009-12-16 2011-06-30 Panasonic Corp 半導体装置
FR2955700B1 (fr) * 2010-01-28 2012-08-17 St Microelectronics Crolles 2 Photodiode de capteur d'image
US8614495B2 (en) 2010-04-23 2013-12-24 Taiwan Semiconductor Manufacturing Company, Ltd. Back side defect reduction for back side illuminated image sensor
EP2509107A4 (en) * 2010-06-01 2013-07-31 Boly Media Comm Shenzhen Co MULTISPEKTRAL LIGHT-SENSITIVE DEVICE
JP2012124299A (ja) * 2010-12-08 2012-06-28 Toshiba Corp 裏面照射型固体撮像装置及びその製造方法
JP2012234968A (ja) * 2011-04-28 2012-11-29 Sharp Corp 固体撮像装置およびその製造方法、並びに電子情報機器
JP5690228B2 (ja) * 2011-06-22 2015-03-25 日本放送協会 裏面照射型固体撮像素子及びそれを備えた撮像装置
JP2014060199A (ja) * 2012-09-14 2014-04-03 Toshiba Corp 固体撮像装置の製造方法及び固体撮像装置
JP2015053296A (ja) * 2013-01-28 2015-03-19 ソニー株式会社 半導体素子およびこれを備えた半導体装置
JP2014199898A (ja) * 2013-03-11 2014-10-23 ソニー株式会社 固体撮像素子および製造方法、並びに、電子機器
US9860466B2 (en) * 2015-05-14 2018-01-02 Kla-Tencor Corporation Sensor with electrically controllable aperture for inspection and metrology systems
US11791367B2 (en) * 2019-12-02 2023-10-17 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3939430B2 (ja) * 1998-04-03 2007-07-04 富士通株式会社 光検出素子
KR20010090448A (ko) * 2000-03-17 2001-10-18 시마무라 테루오 촬상장치 및 그 제조방법 및 그 촬상장치를 사용하는노광장치, 측정장치, 위치맞춤장치 및 수차측정장치
JP2003204057A (ja) * 2002-01-10 2003-07-18 Nikon Corp 背面照射型撮像装置、収差計測装置、位置計測装置、投影露光装置、背面照射型撮像装置の製造方法、およびデバイス製造方法
US7166878B2 (en) * 2003-11-04 2007-01-23 Sarnoff Corporation Image sensor with deep well region and method of fabricating the image sensor
JP4474962B2 (ja) * 2004-03-19 2010-06-09 ソニー株式会社 裏面照射型固体撮像素子、電子機器モジュール及びカメラモジュール
JP4810806B2 (ja) * 2004-07-30 2011-11-09 ソニー株式会社 固体撮像装置
JP4507769B2 (ja) * 2004-08-31 2010-07-21 ソニー株式会社 固体撮像素子、カメラモジュール及び電子機器モジュール

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Publication number Publication date
US20080217724A1 (en) 2008-09-11
JP2008205256A (ja) 2008-09-04

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