JP4732475B2 - 表面処理方法及びその装置 - Google Patents
表面処理方法及びその装置 Download PDFInfo
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- JP4732475B2 JP4732475B2 JP2008070713A JP2008070713A JP4732475B2 JP 4732475 B2 JP4732475 B2 JP 4732475B2 JP 2008070713 A JP2008070713 A JP 2008070713A JP 2008070713 A JP2008070713 A JP 2008070713A JP 4732475 B2 JP4732475 B2 JP 4732475B2
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- gas
- wafer
- oxide film
- plasma
- heating
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- Expired - Lifetime
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- 238000000034 method Methods 0.000 title claims description 44
- 238000004381 surface treatment Methods 0.000 title description 52
- 238000010438 heat treatment Methods 0.000 claims description 49
- 238000012545 processing Methods 0.000 claims description 48
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 3
- 230000002195 synergetic effect Effects 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 9
- 239000000654 additive Substances 0.000 claims 5
- 230000000996 additive effect Effects 0.000 claims 5
- 239000007789 gas Substances 0.000 description 160
- 238000001816 cooling Methods 0.000 description 21
- 238000012546 transfer Methods 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000010453 quartz Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 10
- 239000002826 coolant Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005108 dry cleaning Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005092 sublimation method Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012806 monitoring device Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Description
10 処理容器
13 石英ライニング
15 石英ドーム
18 加熱部カバー
19 加熱ランプ
20 ウエハ載置台
21 クランプリング
24 ウエハリフト手段
25 ピン駆動機構
26 反応ガス(NF3 )供給管
28 NF3 ガス源
29 基台
30 プラズマ形成管(プラズマ発生部)
31 プラズマキャビティ
32 マイクロ波発生源
33 プラズマガス導入部
35 N2 ガス源
36 H2 ガス源
40 排気管
41 真空ポンプ
100 真空クラスタ装置
101 自然酸化膜除去チャンバ
102 加熱チャンバ
103 配線形成チャンバ
104 ロードロックチャンバ
105 搬送チャンバ
106 搬送ロボット
107 ゲートバルブ
200 真空クラスタ装置
201 自然酸化膜除去チャンバ
202 加熱チャンバ
203 配線形成チャンバ
204 冷却チャンバ
205 ロードロックチャンバ
206 搬送チャンバ
207 搬送ロボット
208 ゲートバルブ
Claims (5)
- 表面に酸化膜を有する被処理体を処理する処理方法において、
排気手段により処理容器内を真空排気する工程と、
ガス導入部よりNとHを含むガスを導入する工程と、
プラズマ発生部により前記NとHを含むガスを活性化して第1活性ガス種を形成する工程と、
ガス供給管よりNF3ガスからなる添加ガスを前記プラズマ発生部と前記被処理体の間の位置に供給する工程と、
前記第1活性ガス種により前記添加ガスを活性化して第2活性ガス種を形成する工程と、
前記被処理体の表面上の前記酸化膜と、前記第1活性ガス種と、前記第2活性ガス種との相乗作用によりSi、N、H、F、Oの混合した反応膜を前記被処理体上に形成する工程と、
前記ガス導入部よりの前記NとHを含むガスの導入を停止する工程と、
前記ガス供給管よりの前記添加ガスの供給を停止する工程と、
排気手段による処理容器内の真空排気を停止する工程と、
を実施することを特徴とする処理方法。 - 請求項1の処理方法において、
前記ガス導入部より前記NとHを含むガスを導入する工程の後に、
前記ガス供給管より前記添加ガスを前記プラズマ発生部と前記被処理体の間の位置に供給する工程を実施することを特徴とする処理方法。 - 請求項1の処理方法において、
加熱手段により前記被処理体を加熱して前記反応膜を昇華することにより前記被処理体から前記酸化膜を除去する工程と、
をさらに実施することを特徴とする処理方法。 - 請求項3の処理方法において、
前記ガス供給管よりの前記添加ガスの供給を停止する工程の後に、
前記加熱手段により前記被処理体を加熱して前記反応膜を昇華することにより前記被処理体から前記酸化膜を除去する工程を実施することを特徴とする処理方法。 - 請求項3の処理方法において、
前記加熱手段により前記被処理体を加熱して前記反応膜を昇華することにより前記被処理体から前記酸化膜を除去する工程の後に、
前記排気手段による前記処理容器内の真空排気を停止する工程を実施することを特徴とする処理方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008070713A JP4732475B2 (ja) | 1998-11-11 | 2008-03-19 | 表面処理方法及びその装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1998320478 | 1998-11-11 | ||
JP32047898 | 1998-11-11 | ||
JP2008070713A JP4732475B2 (ja) | 1998-11-11 | 2008-03-19 | 表面処理方法及びその装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32062799A Division JP4124543B2 (ja) | 1998-11-11 | 1999-11-11 | 表面処理方法及びその装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008322099A Division JP4750176B2 (ja) | 1998-11-11 | 2008-12-18 | 表面処理方法及びその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008166848A JP2008166848A (ja) | 2008-07-17 |
JP4732475B2 true JP4732475B2 (ja) | 2011-07-27 |
Family
ID=18121900
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008013588A Expired - Fee Related JP4732469B2 (ja) | 1998-11-11 | 2008-01-24 | 表面処理方法及びその装置 |
JP2008070713A Expired - Lifetime JP4732475B2 (ja) | 1998-11-11 | 2008-03-19 | 表面処理方法及びその装置 |
JP2008322099A Expired - Lifetime JP4750176B2 (ja) | 1998-11-11 | 2008-12-18 | 表面処理方法及びその装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008013588A Expired - Fee Related JP4732469B2 (ja) | 1998-11-11 | 2008-01-24 | 表面処理方法及びその装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008322099A Expired - Lifetime JP4750176B2 (ja) | 1998-11-11 | 2008-12-18 | 表面処理方法及びその装置 |
Country Status (4)
Country | Link |
---|---|
EP (4) | EP1981077A3 (ja) |
JP (3) | JP4732469B2 (ja) |
KR (1) | KR100605884B1 (ja) |
TW (1) | TW448499B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4057198B2 (ja) | 1999-08-13 | 2008-03-05 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP4644943B2 (ja) * | 2001-01-23 | 2011-03-09 | 東京エレクトロン株式会社 | 処理装置 |
KR20040104004A (ko) * | 2003-06-02 | 2004-12-10 | 주성엔지니어링(주) | 액정표시장치용 클러스터 장치 |
JP5274649B2 (ja) * | 2009-03-26 | 2013-08-28 | 株式会社アルバック | 真空処理方法及び真空処理装置 |
JP2012004188A (ja) * | 2010-06-14 | 2012-01-05 | Toshiba Corp | エッチング方法 |
JP2012089805A (ja) * | 2010-10-22 | 2012-05-10 | Toshiba Corp | エッチング装置およびエッチング方法 |
JP2012119539A (ja) * | 2010-12-01 | 2012-06-21 | Ulvac Japan Ltd | ラジカルクリーニング方法及びラジカルクリーニング装置 |
FR2972563B1 (fr) | 2011-03-07 | 2013-03-01 | Altis Semiconductor Snc | Procédé de traitement d'une couche de nitrure de métal oxydée |
KR101870667B1 (ko) * | 2011-08-17 | 2018-06-26 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP6059165B2 (ja) | 2014-02-19 | 2017-01-11 | 東京エレクトロン株式会社 | エッチング方法、及びプラズマ処理装置 |
JP6326295B2 (ja) | 2014-06-04 | 2018-05-16 | 東京エレクトロン株式会社 | 冷却処理装置、及び、冷却処理装置の運用方法 |
JP6488164B2 (ja) * | 2015-03-23 | 2019-03-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6818402B2 (ja) * | 2015-07-17 | 2021-01-20 | 株式会社日立ハイテク | プラズマ処理装置 |
KR102493574B1 (ko) * | 2015-10-13 | 2023-01-31 | 세메스 주식회사 | 기판 처리 장치 |
JP6625891B2 (ja) | 2016-02-10 | 2019-12-25 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP6812284B2 (ja) * | 2017-03-28 | 2021-01-13 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
JP6825069B2 (ja) * | 2019-11-28 | 2021-02-03 | 株式会社日立ハイテク | 真空処理装置 |
CN113133305B (zh) * | 2021-06-03 | 2023-11-10 | 常州井芯半导体设备有限公司 | 配备等离子发生装置的回流焊设备及回流焊方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208498A (ja) * | 1998-11-11 | 2000-07-28 | Tokyo Electron Ltd | 表面処理方法及びその装置 |
Family Cites Families (12)
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JPS6360529A (ja) * | 1986-09-01 | 1988-03-16 | Hitachi Ltd | プラズマ処理方法 |
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JP2981243B2 (ja) * | 1988-12-27 | 1999-11-22 | 株式会社東芝 | 表面処理方法 |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
JPH05163097A (ja) * | 1991-12-11 | 1993-06-29 | Hitachi Koki Co Ltd | ダイヤモンド気相合成法 |
JP3084497B2 (ja) | 1992-03-25 | 2000-09-04 | 東京エレクトロン株式会社 | SiO2膜のエッチング方法 |
JPH05306192A (ja) * | 1992-05-07 | 1993-11-19 | Fujitsu Ltd | ダイヤモンド膜の合成方法および装置 |
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JP3328416B2 (ja) * | 1994-03-18 | 2002-09-24 | 富士通株式会社 | 半導体装置の製造方法と製造装置 |
JP3379302B2 (ja) | 1995-10-13 | 2003-02-24 | 富士通株式会社 | プラズマ処理方法 |
JPH10321610A (ja) * | 1997-03-19 | 1998-12-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JP3627451B2 (ja) * | 1997-06-04 | 2005-03-09 | 東京エレクトロン株式会社 | 表面処理方法及びその装置 |
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1999
- 1999-11-08 TW TW088119461A patent/TW448499B/zh not_active IP Right Cessation
- 1999-11-08 KR KR1019990049242A patent/KR100605884B1/ko active IP Right Grant
- 1999-11-11 EP EP08161432A patent/EP1981077A3/en not_active Withdrawn
- 1999-11-11 EP EP08161431A patent/EP1983565A3/en not_active Withdrawn
- 1999-11-11 EP EP08161430A patent/EP1981073A3/en not_active Withdrawn
- 1999-11-11 EP EP99122000.5A patent/EP1001454B1/en not_active Expired - Lifetime
-
2008
- 2008-01-24 JP JP2008013588A patent/JP4732469B2/ja not_active Expired - Fee Related
- 2008-03-19 JP JP2008070713A patent/JP4732475B2/ja not_active Expired - Lifetime
- 2008-12-18 JP JP2008322099A patent/JP4750176B2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208498A (ja) * | 1998-11-11 | 2000-07-28 | Tokyo Electron Ltd | 表面処理方法及びその装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2008205452A (ja) | 2008-09-04 |
JP2009071334A (ja) | 2009-04-02 |
EP1001454B1 (en) | 2017-04-26 |
KR100605884B1 (ko) | 2006-08-01 |
JP4750176B2 (ja) | 2011-08-17 |
EP1001454A3 (en) | 2001-01-17 |
EP1983565A2 (en) | 2008-10-22 |
JP2008166848A (ja) | 2008-07-17 |
KR20000035303A (ko) | 2000-06-26 |
EP1981077A3 (en) | 2011-11-02 |
JP4732469B2 (ja) | 2011-07-27 |
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EP1983565A3 (en) | 2011-11-02 |
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