JP4727170B2 - プラズマ処理方法、および後処理方法 - Google Patents

プラズマ処理方法、および後処理方法 Download PDF

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Publication number
JP4727170B2
JP4727170B2 JP2004184489A JP2004184489A JP4727170B2 JP 4727170 B2 JP4727170 B2 JP 4727170B2 JP 2004184489 A JP2004184489 A JP 2004184489A JP 2004184489 A JP2004184489 A JP 2004184489A JP 4727170 B2 JP4727170 B2 JP 4727170B2
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JP
Japan
Prior art keywords
plasma
chamber
gas
wafer
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004184489A
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English (en)
Japanese (ja)
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JP2006012940A (ja
Inventor
昭貴 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004184489A priority Critical patent/JP4727170B2/ja
Priority to CNB2005100770642A priority patent/CN100359647C/zh
Priority to TW094120824A priority patent/TW200601453A/zh
Priority to KR1020050054031A priority patent/KR100743275B1/ko
Priority to US11/159,228 priority patent/US20060011580A1/en
Publication of JP2006012940A publication Critical patent/JP2006012940A/ja
Application granted granted Critical
Publication of JP4727170B2 publication Critical patent/JP4727170B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP2004184489A 2004-06-23 2004-06-23 プラズマ処理方法、および後処理方法 Expired - Lifetime JP4727170B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004184489A JP4727170B2 (ja) 2004-06-23 2004-06-23 プラズマ処理方法、および後処理方法
CNB2005100770642A CN100359647C (zh) 2004-06-23 2005-06-15 等离子体处理方法及后处理方法
TW094120824A TW200601453A (en) 2004-06-23 2005-06-22 Plasma processing method and post-processing method
KR1020050054031A KR100743275B1 (ko) 2004-06-23 2005-06-22 플라즈마 처리 방법 및 후처리방법
US11/159,228 US20060011580A1 (en) 2004-06-23 2005-06-23 Plasma processing method and post-processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004184489A JP4727170B2 (ja) 2004-06-23 2004-06-23 プラズマ処理方法、および後処理方法

Publications (2)

Publication Number Publication Date
JP2006012940A JP2006012940A (ja) 2006-01-12
JP4727170B2 true JP4727170B2 (ja) 2011-07-20

Family

ID=35779843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004184489A Expired - Lifetime JP4727170B2 (ja) 2004-06-23 2004-06-23 プラズマ処理方法、および後処理方法

Country Status (4)

Country Link
JP (1) JP4727170B2 (zh)
KR (1) KR100743275B1 (zh)
CN (1) CN100359647C (zh)
TW (1) TW200601453A (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5823160B2 (ja) 2011-05-11 2015-11-25 東京エレクトロン株式会社 堆積物除去方法
JP5859262B2 (ja) * 2011-09-29 2016-02-10 東京エレクトロン株式会社 堆積物除去方法
CN105097700B (zh) * 2014-04-24 2018-07-20 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制备方法
JP6749090B2 (ja) * 2015-11-12 2020-09-02 東京エレクトロン株式会社 ハロゲン系ガスを用いる処理装置における処理方法
JP2019504507A (ja) * 2016-02-05 2019-02-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 複数種類のチャンバを有する集積型の層エッチングシステム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160123A (ja) * 1991-08-29 1993-06-25 Sony Corp 配線形成方法
JPH06151389A (ja) * 1992-11-10 1994-05-31 Sony Corp ドライエッチングの後処理方法
JPH0799224A (ja) * 1993-09-28 1995-04-11 Hitachi Ltd 多チャンバ型半導体製造装置
JP2002151474A (ja) * 2000-11-08 2002-05-24 Hitachi Ltd 半導体デバイスの製造装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635532A (ja) * 1986-06-25 1988-01-11 Matsushita Electric Ind Co Ltd プラズマクリ−ニング方法
US5451263A (en) * 1994-02-03 1995-09-19 Harris Corporation Plasma cleaning method for improved ink brand permanency on IC packages with metallic parts
US6536449B1 (en) * 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process
US6372657B1 (en) * 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
JP3925088B2 (ja) * 2001-01-16 2007-06-06 株式会社日立製作所 ドライ洗浄方法
US20030141820A1 (en) * 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160123A (ja) * 1991-08-29 1993-06-25 Sony Corp 配線形成方法
JPH06151389A (ja) * 1992-11-10 1994-05-31 Sony Corp ドライエッチングの後処理方法
JPH0799224A (ja) * 1993-09-28 1995-04-11 Hitachi Ltd 多チャンバ型半導体製造装置
JP2002151474A (ja) * 2000-11-08 2002-05-24 Hitachi Ltd 半導体デバイスの製造装置

Also Published As

Publication number Publication date
JP2006012940A (ja) 2006-01-12
KR20060046505A (ko) 2006-05-17
CN1734724A (zh) 2006-02-15
CN100359647C (zh) 2008-01-02
KR100743275B1 (ko) 2007-07-26
TW200601453A (en) 2006-01-01

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