TW200601453A - Plasma processing method and post-processing method - Google Patents

Plasma processing method and post-processing method

Info

Publication number
TW200601453A
TW200601453A TW094120824A TW94120824A TW200601453A TW 200601453 A TW200601453 A TW 200601453A TW 094120824 A TW094120824 A TW 094120824A TW 94120824 A TW94120824 A TW 94120824A TW 200601453 A TW200601453 A TW 200601453A
Authority
TW
Taiwan
Prior art keywords
plasma
processing method
processing
processed
post
Prior art date
Application number
TW094120824A
Other languages
Chinese (zh)
Inventor
Akitaka Shimizu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200601453A publication Critical patent/TW200601453A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A plasma processing method and a post-processing method can certainly prevent corrosion not only in a processing chamber but also in a transfer system. The plasma processing method for performing a plasma process on an object to be processed in a chamber includes a first plasma process for processing the object to be processed by a first plasma that is generated by plasmarizing a gas containing at least a halogen element; a second plasma process for processing the chamber and the object to be processed by supplying an oxygen-containing gas in the chamber to generate a second plasma after the first plasma process; and a third plasma process for processing the object to be processed after the second plasma process by using a third plasma that is generated by plasmarizing a gas containing at least nitrogen and hydrogen.
TW094120824A 2004-06-23 2005-06-22 Plasma processing method and post-processing method TW200601453A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004184489A JP4727170B2 (en) 2004-06-23 2004-06-23 Plasma processing method and post-processing method

Publications (1)

Publication Number Publication Date
TW200601453A true TW200601453A (en) 2006-01-01

Family

ID=35779843

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120824A TW200601453A (en) 2004-06-23 2005-06-22 Plasma processing method and post-processing method

Country Status (4)

Country Link
JP (1) JP4727170B2 (en)
KR (1) KR100743275B1 (en)
CN (1) CN100359647C (en)
TW (1) TW200601453A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5823160B2 (en) 2011-05-11 2015-11-25 東京エレクトロン株式会社 Deposit removal method
JP5859262B2 (en) 2011-09-29 2016-02-10 東京エレクトロン株式会社 Deposit removal method
CN105097700B (en) * 2014-04-24 2018-07-20 中芯国际集成电路制造(上海)有限公司 A kind of preparation method of semiconductor devices
JP6749090B2 (en) * 2015-11-12 2020-09-02 東京エレクトロン株式会社 Processing method in processing apparatus using halogen-based gas
JP2019504507A (en) * 2016-02-05 2019-02-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Integrated layer etching system having multiple types of chambers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635532A (en) * 1986-06-25 1988-01-11 Matsushita Electric Ind Co Ltd Plasma cleaning process
JP3191407B2 (en) * 1991-08-29 2001-07-23 ソニー株式会社 Wiring formation method
JPH06151389A (en) * 1992-11-10 1994-05-31 Sony Corp Post-treatment method of dry etching
JPH0799224A (en) * 1993-09-28 1995-04-11 Hitachi Ltd Multiple-chamber type semiconductor manufacturing apparatus
US5451263A (en) * 1994-02-03 1995-09-19 Harris Corporation Plasma cleaning method for improved ink brand permanency on IC packages with metallic parts
US6536449B1 (en) * 1997-11-17 2003-03-25 Mattson Technology Inc. Downstream surface cleaning process
US6372657B1 (en) * 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
JP2002151474A (en) * 2000-11-08 2002-05-24 Hitachi Ltd Apparatus for manufacturing semiconductor device
JP3925088B2 (en) * 2001-01-16 2007-06-06 株式会社日立製作所 Dry cleaning method
US20030141820A1 (en) * 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing

Also Published As

Publication number Publication date
CN100359647C (en) 2008-01-02
KR100743275B1 (en) 2007-07-26
JP2006012940A (en) 2006-01-12
CN1734724A (en) 2006-02-15
JP4727170B2 (en) 2011-07-20
KR20060046505A (en) 2006-05-17

Similar Documents

Publication Publication Date Title
TW200635446A (en) Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
TW200943455A (en) Apparatus and method for processing substrate
TW200511430A (en) Plasma processing apparatus and plasma processing method
TW200636855A (en) Vertical batch processing apparatus
TW200741803A (en) Substrate processing apparatus, method for examining substrate processing conditions, and storage medium
TW200632787A (en) Methods and apparatuses for video encoding
EP1748687A4 (en) Power supply circuit for plasma generation, plasma generating apparatus, plasma processing apparatus and plasma-processed object
TW200710253A (en) Integrated metrology tools for monitoring and controlling large area substrate processing chambers
TW200717648A (en) Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
TW200710990A (en) Plasma processing method
TW200501254A (en) Method for removing silicon oxide film and processing apparatus
TW200802592A (en) Etching method and system, and computer readable recording medium
GB2432413A (en) Systems and methods for low-temperature gas separation
TWI263271B (en) Method for enhancing fluorine utilization
TW200601453A (en) Plasma processing method and post-processing method
TW200721248A (en) Product-related feedback for process control
TW200500498A (en) Method for etching an aluminum layer using an amorphous carbon mask
TW200611363A (en) Methods and apparatus for determining endpoint in a plasma processing system
TW200731879A (en) Plasma producing method and apparatus as well as plasma processing apparatus
SG142223A1 (en) Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition
TW200802587A (en) Treating apparatus, method of treating and plasma source
WO2009104918A3 (en) Apparatus and method for processing substrate
MY139113A (en) Methods of etching photoresist on substrates
SG10201808438SA (en) Substrate processing apparatus, substrate processing method, and computer storage medium
TW200718809A (en) Plasma etching of tapered structures