JP4724470B2 - 露光方法 - Google Patents

露光方法 Download PDF

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Publication number
JP4724470B2
JP4724470B2 JP2005162718A JP2005162718A JP4724470B2 JP 4724470 B2 JP4724470 B2 JP 4724470B2 JP 2005162718 A JP2005162718 A JP 2005162718A JP 2005162718 A JP2005162718 A JP 2005162718A JP 4724470 B2 JP4724470 B2 JP 4724470B2
Authority
JP
Japan
Prior art keywords
reticle
measurement
scanning
exposure
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005162718A
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English (en)
Japanese (ja)
Other versions
JP2006339438A (ja
JP2006339438A5 (enExample
Inventor
浩平 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005162718A priority Critical patent/JP4724470B2/ja
Priority to US11/438,459 priority patent/US7498596B2/en
Publication of JP2006339438A publication Critical patent/JP2006339438A/ja
Publication of JP2006339438A5 publication Critical patent/JP2006339438A5/ja
Application granted granted Critical
Publication of JP4724470B2 publication Critical patent/JP4724470B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2005162718A 2005-06-02 2005-06-02 露光方法 Expired - Fee Related JP4724470B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005162718A JP4724470B2 (ja) 2005-06-02 2005-06-02 露光方法
US11/438,459 US7498596B2 (en) 2005-06-02 2006-05-23 Exposure method that obtains, prior to exposure, reticle surface form data and measurement position error, for scanning control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005162718A JP4724470B2 (ja) 2005-06-02 2005-06-02 露光方法

Publications (3)

Publication Number Publication Date
JP2006339438A JP2006339438A (ja) 2006-12-14
JP2006339438A5 JP2006339438A5 (enExample) 2008-07-17
JP4724470B2 true JP4724470B2 (ja) 2011-07-13

Family

ID=37493251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005162718A Expired - Fee Related JP4724470B2 (ja) 2005-06-02 2005-06-02 露光方法

Country Status (2)

Country Link
US (1) US7498596B2 (enExample)
JP (1) JP4724470B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4724470B2 (ja) 2005-06-02 2011-07-13 キヤノン株式会社 露光方法
JP4250637B2 (ja) 2006-06-14 2009-04-08 キヤノン株式会社 走査露光装置及びデバイス製造方法
JP4974821B2 (ja) * 2007-09-20 2012-07-11 富士フイルム株式会社 画像記録方法、および画像記録システム
JP4974826B2 (ja) * 2007-09-27 2012-07-11 富士フイルム株式会社 画像記録方法、および画像記録システム
NL1036307A1 (nl) * 2007-12-21 2009-06-23 Asml Netherlands Bv Lithographic apparatus, method for levelling an object, and lithographic projection method.
NL2003673A (en) * 2008-11-21 2010-05-25 Asml Netherlands Bv Lithographic apparatus and methods for compensating substrate unflatness, determining the effect of patterning device unflatness, and determing the effect of thermal loads on a patterning device.
NL2006190A (en) * 2010-03-11 2011-09-13 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
DE102010041562A1 (de) * 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie sowie Verfahren zur mikrolithographischen Belichtung
DE102010041556A1 (de) 2010-09-28 2012-03-29 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Mikrolithographie und Verfahren zur mikrolithographischen Abbildung
US8994918B2 (en) * 2010-10-21 2015-03-31 Nikon Corporation Apparatus and methods for measuring thermally induced reticle distortion
KR20140061544A (ko) * 2011-09-16 2014-05-21 에이에스엠엘 네델란즈 비.브이. 리소그래피 패터닝 디바이스를 모니터링하는 장치
JP5624580B2 (ja) * 2012-04-03 2014-11-12 株式会社アドテックエンジニアリング 画像記録方法、および画像記録システム
USRE49142E1 (en) * 2014-08-06 2022-07-19 Asml Netherlands B.V. Lithographic apparatus and an object positioning system
JP7324116B2 (ja) * 2019-10-15 2023-08-09 キヤノン株式会社 異物検査装置および異物検査方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3307988B2 (ja) * 1992-07-17 2002-07-29 株式会社ニコン 投影露光方法及び装置
JP3428974B2 (ja) * 1992-08-19 2003-07-22 キヤノン株式会社 投影露光方法及びそれを有する投影露光装置
JPH09293655A (ja) * 1996-04-25 1997-11-11 Nikon Corp 投影露光装置
JPH10214780A (ja) * 1997-01-28 1998-08-11 Nikon Corp 投影露光装置
JPH1145846A (ja) * 1997-07-25 1999-02-16 Nikon Corp 走査型露光方法及び装置
JPH1126345A (ja) * 1997-06-30 1999-01-29 Nikon Corp 投影露光装置
US6549271B2 (en) 1997-01-28 2003-04-15 Nikon Corporation Exposure apparatus and method
JP2002048527A (ja) * 2000-07-31 2002-02-15 Nikon Corp 面形状計測方法
JP4235392B2 (ja) * 2002-03-08 2009-03-11 キヤノン株式会社 位置検出装置、面形状推測装置、露光装置、及びデバイスの製造方法
JP3787531B2 (ja) * 2002-03-20 2006-06-21 キヤノン株式会社 露光方法及び装置
JP3762323B2 (ja) 2002-04-02 2006-04-05 キヤノン株式会社 露光装置
WO2004088417A1 (ja) * 2003-03-31 2004-10-14 Fujitsu Limited フォトマスクのパターン検査方法、フォトマスクのパターン検査装置、およびフォトマスクのパターン検査プログラム
JP4125177B2 (ja) * 2003-05-16 2008-07-30 キヤノン株式会社 露光装置
JP2005085991A (ja) * 2003-09-09 2005-03-31 Canon Inc 露光装置及び該装置を用いたデバイス製造方法
JP2006261418A (ja) * 2005-03-17 2006-09-28 Canon Inc 投影露光装置およびデバイス製造方法
JP4724470B2 (ja) 2005-06-02 2011-07-13 キヤノン株式会社 露光方法

Also Published As

Publication number Publication date
US20060273267A1 (en) 2006-12-07
JP2006339438A (ja) 2006-12-14
US7498596B2 (en) 2009-03-03

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