JP4722634B2 - オボニック閾値スイッチを有する相変化メモリ - Google Patents
オボニック閾値スイッチを有する相変化メモリ Download PDFInfo
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- JP4722634B2 JP4722634B2 JP2005261966A JP2005261966A JP4722634B2 JP 4722634 B2 JP4722634 B2 JP 4722634B2 JP 2005261966 A JP2005261966 A JP 2005261966A JP 2005261966 A JP2005261966 A JP 2005261966A JP 4722634 B2 JP4722634 B2 JP 4722634B2
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- 239000012782 phase change material Substances 0.000 claims 7
- 239000004020 conductor Substances 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
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- 150000004767 nitrides Chemical class 0.000 description 8
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- 238000005530 etching Methods 0.000 description 5
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- 229910052751 metal Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- 229910008482 TiSiN Inorganic materials 0.000 description 2
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- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 2
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- 229910052714 tellurium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Description
OTSはOMSより大きい比抵抗を有することが可能である。メモリセルが読み取られるときであって、後者が高抵抗状態(ディジタルの“0”状態と対応付けられる)にあるとき、電圧降下が、OMSをトリガするに不十分であるセルに加えられる。それと同じ電圧降下は、OMSが既に低抵抗状態(ディジタルの“1”状態と対応付けられる)にあるとき、OTS及びOMSを低抵抗状態にするに十分である。
2 メモリセル
3 相変化メモリ要素
4 選択要素
5 ワードライン
6 ビットライン
10 ウェーハ
11 基板
12 絶縁層
13 行ライン
14 第1誘電体層
18 第2窒化物層
19 第1酸化物層
20 開口
20a 垂直表面
21 垂直方向の部分
22 保護領域
23 ヒータ領域
23a 第1の垂直方向に伸びた壁
23b 第2の垂直方向に伸びた壁
24 シース層
25 第2酸化物層
27 第1カルコゲン層
28 第1バリア層
29 第2カルコゲンイッチング層
30 第2バリア層
31 ドット
32 シーリング層
33 層間誘電体
35 ビア開口
36a トレンチ
36b トレンチ
37 接触領域
40 ビア
41a 列ライン
41b 行ライン
50 グルー層
50a グルー領域
Claims (20)
- サブリソグラフィック寸法の部分を有するヒータと、
前記部分と接する相変化材料と、
前記相変化材料上のカルコゲン選択材料であって、前記相変化材料及び前記カルコゲン選択材料は共通の端部を有する、カルコゲン選択材料と、
を有することを特徴とする相変化メモリ。 - 請求項1に記載の相変化メモリであって、前記サブリソグラフィック寸法を有する接触領域において前記相変化材料と接触する抵抗性壁要素を有する、ことを特徴とする相変化メモリ。
- 請求項2に記載の相変化メモリであって、前記壁要素は、前記底部領域から前記スタックの方に伸びている壁及び底部領域を有するボックス状構造の一部である、ことを特徴とする相変化メモリ。
- 請求項3に記載の相変化メモリであって前記ボックス状構造は平行六面体であり、前記壁は前記壁要素を有する、ことを特徴とする相変化メモリ。
- 請求項4に記載の相変化メモリであって、前記壁要素は矩形である、ことを特徴とする相変化メモリ。
- 請求項4に記載の相変化メモリであって、前記壁要素は、少なくとも前記接触領域を規定する凸部分を有する、矩形である、ことを特徴とする相変化メモリ。
- 請求項6に記載の相変化メモリであって、前記壁要素の1つの側部において伸びているグルー領域を有する、ことを特徴とする相変化メモリ。
- 請求項7に記載の相変化メモリであって、グルー領域はチタンを有する、ことを特徴とする相変化メモリ。
- 請求項2に記載の相変化メモリであって、前記壁要素は、酸化回避領域により側部を囲まれている、ことを特徴とする相変化メモリ。
- 請求項1に記載の相変化メモリであって、選択領域により囲まれたスタックを有する、ことを特徴とする相変化メモリ。
- 請求項10に記載の相変化メモリであって、前記スタックは、前記記憶領域と、第1バリア領域と、前記選択要素と、第2バリア領域とを有する、ことを特徴とする相変化メモリ。
- 請求項1に記載の相変化メモリであって、前記抵抗性要素と電気的接触状態にあって、その抵抗性要素の下に伸びている導電性材料の第1接続ラインと前記壁要素において伸びている前記スタックと電気的接触状態にあって、その壁要素において伸びている導電性材料の第2接続ラインとを更に有する、ことを特徴とする相変化メモリ。
- 相変化メモリを形成する方法であって:
サブリソグラフィック寸法の部分を有するヒータを形成する段階;
前記部分と接する相変化材料を形成する段階;並びに
前記相変化材料上にカルコゲン選択材料を形成する段階であって、前記相変化材料及び前記カルコゲン選択材料は共通の端部を有する、段階;
を有することを特徴とする方法。 - 請求項13に記載の方法であって:
絶縁層の第1開口において抵抗性要素を形成する段階;
前記第1開口の側壁及び底部を覆うヒータ層を堆積する段階であって、前記ヒータ層の前記側壁の部分は前記抵抗性要素を構成する、段階;
絶縁体材料で前記開口を満たす段階;並びに
カプセル化構造により囲まれたヒータ領域を形成するために前記開口から突き出した前記絶縁性材料と前記ヒータ層の部分を除去する段階;
を更に有する、ことを特徴とする方法。 - 請求項14に記載の方法であって、前記ヒータ層を堆積する段階の前に、前記第1開口の前記側壁においてスペーサ領域を形成する段階を有する、ことを特徴とする方法。
- 請求項14に記載の方法であって、前記開口を満たす段階の前に、前記ヒータ層においてシース層を堆積する段階を有する、ことを特徴とする方法。
- 請求項14に記載の方法であって、前記第1開口を形成する段階の前に、グルー材料層を堆積する段階であって、前記第1開口を形成する段階は、前記グルー材料層の選択された部分を除去する手順と、前記ヒータ層の側部のみにおいて伸びているグルー材料部分を形成するために前記スタックの側面方向に伸びている前記グルー材料層を除去する手順とを有する、グルー材料層を堆積する段階を有する、ことを特徴とする方法。
- 請求項13に記載の方法であって、前記スタックを側面に沿って囲むシーリング領域を形成する段階を更に有する、ことを特徴とする方法。
- 請求項13に記載の方法であって、前記スタックを形成する段階は、第1カルコゲン材料の第1層と、バリア材料の第2層と、第2の異なるカルコゲン材料の第3層と、バリア材料の第4層とを堆積する手順を有する、ことを特徴とする方法。
- 請求項13に記載の方法であって、前記ヒータを挟む一対の層を用いて前記ヒータに前記スタックを固定する段階であって、前記層は酸化から前記ヒータを保護する、段階を有する、ことを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/943,409 | 2004-09-17 | ||
US10/943,409 US7687830B2 (en) | 2004-09-17 | 2004-09-17 | Phase change memory with ovonic threshold switch |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006086526A JP2006086526A (ja) | 2006-03-30 |
JP4722634B2 true JP4722634B2 (ja) | 2011-07-13 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005261966A Expired - Fee Related JP4722634B2 (ja) | 2004-09-17 | 2005-09-09 | オボニック閾値スイッチを有する相変化メモリ |
Country Status (4)
Country | Link |
---|---|
US (2) | US7687830B2 (ja) |
JP (1) | JP4722634B2 (ja) |
KR (1) | KR100632324B1 (ja) |
TW (1) | TWI296435B (ja) |
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TW200616151A (en) | 2006-05-16 |
JP2006086526A (ja) | 2006-03-30 |
TWI296435B (en) | 2008-05-01 |
US20100136742A1 (en) | 2010-06-03 |
US20060073652A1 (en) | 2006-04-06 |
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