JP4708364B2 - ウルトラバリア膜の製造方法 - Google Patents
ウルトラバリア膜の製造方法 Download PDFInfo
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- JP4708364B2 JP4708364B2 JP2006551734A JP2006551734A JP4708364B2 JP 4708364 B2 JP4708364 B2 JP 4708364B2 JP 2006551734 A JP2006551734 A JP 2006551734A JP 2006551734 A JP2006551734 A JP 2006551734A JP 4708364 B2 JP4708364 B2 JP 4708364B2
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000004888 barrier function Effects 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000919 ceramic Substances 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 37
- 230000008021 deposition Effects 0.000 claims abstract description 34
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 238000009499 grossing Methods 0.000 claims abstract 4
- 238000001771 vacuum deposition Methods 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 148
- 238000000034 method Methods 0.000 claims description 78
- 239000010409 thin film Substances 0.000 claims description 59
- 239000007789 gas Substances 0.000 claims description 41
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 28
- 239000012528 membrane Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 125000002524 organometallic group Chemical group 0.000 claims description 13
- 239000002243 precursor Substances 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 12
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 229920006254 polymer film Polymers 0.000 claims description 2
- 238000009751 slip forming Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000000178 monomer Substances 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 230000009471 action Effects 0.000 description 22
- 230000035699 permeability Effects 0.000 description 16
- 150000002902 organometallic compounds Chemical class 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 235000014633 carbohydrates Nutrition 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/62—Plasma-deposition of organic layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Description
Claims (26)
- 基板に積層膜を真空薄膜形成することによってウルトラバリア膜システムを製造する方法であって、
前記積層膜は、平滑膜(smooth layers)と透明セラミック膜からなる交互成膜システムとして形成されているが、少なくとも1つの前記平滑膜は、スパッタリングにより形成された2つの透明セラミック膜間に含まれており、
前記ウルトラバリア膜システムは、DIN53122−2−AによるWVTR(水蒸気透過度)=0.05g/m 2 d及びDIN53380−3によるOTR(酸素透過度)=0.2cm 3 /m 2 dの透過値を超過しないものであり、
平滑膜の形成中、有機金属前駆物質を真空化された成膜チャンバ内に入れ、該成膜チャンバ内で、1kHz〜300kHzのパルス周波数でパルス状にマグネトロンプラズマを作用させることを特徴とする方法。 - 平滑膜の形成中、マグネトロンプラズマを維持するために、窒素又は酸素と反応して変換される物質からなるターゲットが装着されているマグネトロンを用いる請求項1記載の方法。
- 平滑膜の形成中、プラズマを維持するために、2重マグネトロンを使う請求項1または2記載の方法。
- 作業ガスとして希ガスを用いる請求項1〜3の何れか1項記載の方法。
- 有機金属前駆物質として、Si有機化合物、又は、有機金属化合物を入れる請求項1〜4の何れか1項記載の方法。
- 平滑膜の形成中、有機金属前駆物質に加え、酸素、窒素及び/又は水素を反応性ガスとして入れる請求項1〜5の何れか1項記載の方法。
- 平滑膜の形成中、0.1Pa〜10Paにプロセス圧力を調整する請求項1〜6の何れか1項記載の方法。
- マグネトロンスパッタリングによって透明セラミック膜を形成する請求項1〜7迄の何れか1項記載の方法。
- 反応性マグネトロンスパッタリングによって透明セラミック膜を形成し、該形成時に、反応性ガスとして、窒素、酸素及び/又は水素を入れる請求項8記載の方法。
- 透明セラミック膜として、Al2O3を堆積させる請求項1〜9の何れか1項記載の方法。
- 透明セラミック膜として、SiO2を堆積させる請求項1〜9の何れか1項記載の方法。
- 透明セラミック膜として、SiNを堆積させる請求項1〜9の何れか1項記載の方法。
- 固定基板上で薄膜形成を行う請求項1〜12の何れか1項記載の方法。
- ベルト状の可動基板上で薄膜形成を行う請求項1〜12の何れか1項記載の方法。
- 薄膜形成中、基板温度を200℃以下に保持する請求項1〜12の何れか1項記載の方法。
- プラスチック基板上で薄膜形成を行う請求項1〜15の何れか1項記載の方法。
- 膜厚50nm〜500μmの膜厚の平滑膜としてプラズマポリマー膜を形成し、5nm〜500nmの膜厚の透明セラミック膜を形成する請求項1〜16の何れか1項記載の方法。
- 交互成膜システムを、マグネトロン装置を用いて形成し、該マグネトロン装置のプラズマ内に交互に有機金属前駆物質と反応性ガスを入れる請求項1〜17の何れか1項記載の方法。
- 交互成膜システムの形成を、HMDSOと酸素を交互に入れることによって行う請求項18記載の方法。
- 交互成膜システムの形成中、有機金属前駆物質及び反応性ガス及び/又は作業ガスの流入量を徐々に変え、少なくとも部分的に同時に行い、その結果、交互成膜システムの各個別膜をグラジエント状に相互に移行する請求項18又は19記載の方法。
- 反応性ガス及び有機金属前駆物質を、共通のガス入口を介して入れる請求項18〜20の何れか1項記載の方法。
- 交互成膜システムを、少なくとも1つのマグネトロン装置を用いて形成し、有機金属前駆物質及び反応性ガス及び/又は作業ガスを異なる個所で入れて、薄膜形成領域の通過時に、可動の基板上に、順次連続して交互成膜システムの各膜が形成されるようにする請求項1〜17の何れか1項記載の方法。
- 交互成膜システムを、少なくとも1つのマグネトロン装置を用いて形成し、有機金属前駆物質及び反応性ガス及び/又は作業ガスを異なる個所で入れ、マグネトロンプラズマの領域内で、入れられた各ガス間の明らかな分圧グラジエントを形成して、薄膜形成領域の通過時に、可動の基板上に順次連続して、グラジエント状に相互に移行する各膜を形成する請求項1〜17の何れか1項記載の方法。
- 可動の基板を、複数回、薄膜形成領域を通して案内する請求項22又は23記載の方法。
- HMDSOと酸素を同時に入れることによって、交互成膜システムを形成する請求項22〜24の何れか1項記載の方法。
- 反応性ガスと作業ガスを、共通のガス入口を介して入れる請求項22〜25の何れか1項記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004005313A DE102004005313A1 (de) | 2004-02-02 | 2004-02-02 | Verfahren zur Herstellung eines Ultrabarriere-Schichtsystems |
DE102004005313.8 | 2004-02-02 | ||
PCT/EP2004/013258 WO2005073427A2 (de) | 2004-02-02 | 2004-11-23 | Verfahren zur herstellung eines ultrabarriere-schichtsystems |
Publications (2)
Publication Number | Publication Date |
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JP2007522343A JP2007522343A (ja) | 2007-08-09 |
JP4708364B2 true JP4708364B2 (ja) | 2011-06-22 |
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JP2006551734A Expired - Fee Related JP4708364B2 (ja) | 2004-02-02 | 2004-11-23 | ウルトラバリア膜の製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8470140B2 (ja) |
EP (1) | EP1711643B1 (ja) |
JP (1) | JP4708364B2 (ja) |
KR (1) | KR101053340B1 (ja) |
CN (1) | CN1961093B (ja) |
AT (1) | ATE502130T1 (ja) |
DE (2) | DE102004005313A1 (ja) |
WO (1) | WO2005073427A2 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007034775A1 (ja) | 2005-09-22 | 2007-03-29 | Tomoegawa Co., Ltd. | 粘土薄膜基板、電極付き粘土薄膜基板、及びそれらを用いた表示素子 |
JP4763400B2 (ja) * | 2005-09-22 | 2011-08-31 | 株式会社巴川製紙所 | 粘土薄膜基板、電極付き粘土薄膜基板、及びそれらを用いた表示素子 |
JP2007216435A (ja) * | 2006-02-14 | 2007-08-30 | Tomoegawa Paper Co Ltd | ガスバリアフィルム基板、電極付きガスバリアフィルム基板、及びそれらを用いた表示素子 |
DE102007031416B4 (de) * | 2006-07-03 | 2013-01-17 | Sentech Instruments Gmbh | Substrat aus einem polymeren Werkstoff und mit einer wasser- und sauerstoff- undurchlässigen Barrierebeschichtung sowie dazugehöriges Herstellungsverfahren |
DE102006046961A1 (de) * | 2006-10-04 | 2008-04-10 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Herstellung einer flexiblen, gasdichten und transparenten Verbundfolie |
DE102007019994A1 (de) * | 2007-04-27 | 2008-10-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transparente Barrierefolie und Verfahren zum Herstellen derselben |
DE102007061419A1 (de) * | 2007-12-20 | 2009-06-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transparente Kunststofffolie zum Abschirmen elektromagnetischer Wellen und Verfahren zum Herstellen einer solchen Kunststofffolie |
DE102008009504A1 (de) * | 2008-02-15 | 2009-08-20 | Miele & Cie. Kg | Mehrlagig beschichtetes Substrat sowie Verfahren zu dessen Herstellung |
DE102008019665A1 (de) * | 2008-04-18 | 2009-10-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transparentes Barriereschichtsystem |
JP5714481B2 (ja) * | 2008-04-29 | 2015-05-07 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 無機傾斜バリア膜及びそれらの製造方法 |
DE102008028537B4 (de) * | 2008-06-16 | 2012-11-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden einer Kratzschutzbeschichtung auf einem Kunststoffsubstrat |
DE102008028542B4 (de) | 2008-06-16 | 2012-07-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion |
DE102008056968B4 (de) * | 2008-11-13 | 2011-01-05 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden einer Nanoverbund-Schicht auf einem Substrat mittels chemischer Dampfabscheidung |
JP2010163662A (ja) * | 2009-01-16 | 2010-07-29 | National Institute For Materials Science | ドライプロセス装置 |
EP2397574A4 (en) * | 2009-02-16 | 2013-08-14 | Mitsubishi Plastics Inc | METHOD FOR PRODUCING A MULTILAYER GAS-REINFORCED FILM |
DE102009003221A1 (de) * | 2009-05-19 | 2010-11-25 | Evonik Degussa Gmbh | Transparente, witterungsbeständige Barrierefolie für die Einkapselung von Solarzellen II |
DE102010015149A1 (de) | 2010-04-16 | 2011-10-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zum Beschichten eines Substrates innerhalb einer Vakuumkammer mittels plasmaunterstützter chemischer Dampfabscheidung |
DE102010055659A1 (de) * | 2010-12-22 | 2012-06-28 | Technische Universität Dresden | Verfahren zum Abscheiden dielektrischer Schichten im Vakuum sowie Verwendung des Verfahrens |
DE102011005234A1 (de) | 2011-03-08 | 2012-09-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gasbarriereschichtsystem |
DE102011017403A1 (de) * | 2011-04-18 | 2012-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden eines transparenten Barriereschichtsystems |
DE102011017404A1 (de) * | 2011-04-18 | 2012-10-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Abscheiden eines transparenten Barriereschichtsystems |
KR102379573B1 (ko) | 2015-12-30 | 2022-03-25 | 코오롱글로텍주식회사 | 롤투롤 코팅을 이용한 섬유기반 배리어 기판의 제조 방법 |
DE102016226191B4 (de) * | 2016-12-23 | 2018-12-13 | HS-Group GmbH | Verfahren und Vorrichtung zur Herstellung eines mit einer Sperrschicht und einer Schutzschicht beschichteten Substrats |
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DE3402971A1 (de) * | 1984-01-28 | 1985-08-01 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Vorrichtung zur beschichtung eines substrates mittels plasma-chemical vapour deposition oder hochfrequenz-kathodenzerstaeubung |
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DE19548160C1 (de) | 1995-12-22 | 1997-05-07 | Fraunhofer Ges Forschung | Verfahren zur Herstellung organisch modifizierter Oxid-, Oxinitrid- oder Nitridschichten durch Vakuumbeschichtung und danach beschichtetes Substrat |
US5770520A (en) | 1996-12-05 | 1998-06-23 | Lsi Logic Corporation | Method of making a barrier layer for via or contact opening of integrated circuit structure |
US6350643B1 (en) * | 1997-12-18 | 2002-02-26 | Advanced Technology Materials, Inc. | Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom |
DE19802333A1 (de) | 1998-01-23 | 1999-07-29 | Leybold Systems Gmbh | Barriereschicht für Verpackungsmaterial und Verfahren zur Herstellung einer Barriereschicht für Verpackungsmaterial |
DE19824364A1 (de) * | 1998-05-30 | 1999-12-02 | Bosch Gmbh Robert | Verfahren zum Aufbringen eines Verschleißschutz-Schichtsystems mit optischen Eigenschaften auf Oberflächen |
DE10159907B4 (de) * | 2001-12-06 | 2008-04-24 | Interpane Entwicklungs- Und Beratungsgesellschaft Mbh & Co. | Beschichtungsverfahren |
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EP0815283B1 (de) * | 1995-03-14 | 2002-06-19 | Eidgenössische Materialprüfungs- und Forschungsanstalt EMPA | Abscheiden von diffusionssperrschichten in einer niederdruckplasmakammer |
Also Published As
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KR20070017996A (ko) | 2007-02-13 |
DE502004012316D1 (de) | 2011-04-28 |
EP1711643B1 (de) | 2011-03-16 |
JP2007522343A (ja) | 2007-08-09 |
WO2005073427A3 (de) | 2005-11-24 |
KR101053340B1 (ko) | 2011-08-01 |
US20070170050A1 (en) | 2007-07-26 |
CN1961093A (zh) | 2007-05-09 |
WO2005073427A2 (de) | 2005-08-11 |
US8470140B2 (en) | 2013-06-25 |
DE102004005313A1 (de) | 2005-09-01 |
CN1961093B (zh) | 2010-10-13 |
ATE502130T1 (de) | 2011-04-15 |
EP1711643A2 (de) | 2006-10-18 |
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