JP4704702B2 - ブランキングアパーチャアレイおよびその製造方法 - Google Patents

ブランキングアパーチャアレイおよびその製造方法 Download PDF

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Publication number
JP4704702B2
JP4704702B2 JP2004194774A JP2004194774A JP4704702B2 JP 4704702 B2 JP4704702 B2 JP 4704702B2 JP 2004194774 A JP2004194774 A JP 2004194774A JP 2004194774 A JP2004194774 A JP 2004194774A JP 4704702 B2 JP4704702 B2 JP 4704702B2
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JP
Japan
Prior art keywords
electrodes
wiring
electrode
aperture array
blanking aperture
Prior art date
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Expired - Fee Related
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JP2004194774A
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English (en)
Japanese (ja)
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JP2006019438A (ja
JP2006019438A5 (enExample
Inventor
裕一 岩崎
義則 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Canon Inc
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Priority to JP2004194774A priority Critical patent/JP4704702B2/ja
Publication of JP2006019438A publication Critical patent/JP2006019438A/ja
Publication of JP2006019438A5 publication Critical patent/JP2006019438A5/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
JP2004194774A 2004-06-30 2004-06-30 ブランキングアパーチャアレイおよびその製造方法 Expired - Fee Related JP4704702B2 (ja)

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JP2004194774A JP4704702B2 (ja) 2004-06-30 2004-06-30 ブランキングアパーチャアレイおよびその製造方法

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JP2004194774A JP4704702B2 (ja) 2004-06-30 2004-06-30 ブランキングアパーチャアレイおよびその製造方法

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JP2006019438A JP2006019438A (ja) 2006-01-19
JP2006019438A5 JP2006019438A5 (enExample) 2007-08-16
JP4704702B2 true JP4704702B2 (ja) 2011-06-22

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JP2004194774A Expired - Fee Related JP4704702B2 (ja) 2004-06-30 2004-06-30 ブランキングアパーチャアレイおよびその製造方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016076548A (ja) * 2014-10-03 2016-05-12 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5048283B2 (ja) * 2006-07-20 2012-10-17 キヤノン株式会社 偏向器アレイ、描画装置およびデバイス製造方法
US8198601B2 (en) * 2009-01-28 2012-06-12 Ims Nanofabrication Ag Method for producing a multi-beam deflector array device having electrodes
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP5816739B1 (ja) * 2014-12-02 2015-11-18 株式会社ニューフレアテクノロジー マルチビームのブランキングアパーチャアレイ装置、及びマルチビームのブランキングアパーチャアレイ装置の製造方法
JP6587994B2 (ja) 2016-09-09 2019-10-09 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ装置、荷電粒子ビーム描画装置、および電極テスト方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142359A (ja) * 1993-11-19 1995-06-02 Fujitsu Ltd 荷電粒子ビーム露光装置及び方法
JPH11186144A (ja) * 1997-12-25 1999-07-09 Advantest Corp 荷電粒子ビーム露光装置
JP4234242B2 (ja) * 1997-12-19 2009-03-04 株式会社東芝 電子ビーム描画装置
JP2000114147A (ja) * 1998-10-05 2000-04-21 Advantest Corp 荷電粒子ビーム露光装置
JP3494068B2 (ja) * 1999-03-30 2004-02-03 株式会社日立製作所 荷電粒子線装置
JP2003028999A (ja) * 2001-07-11 2003-01-29 Ebara Corp 荷電粒子ビーム制御装置、及びそれを用いた荷電粒子ビーム光学装置、荷電粒子ビーム欠陥検査装置、並びに荷電粒子ビーム制御方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016076548A (ja) * 2014-10-03 2016-05-12 株式会社ニューフレアテクノロジー ブランキングアパーチャアレイ及び荷電粒子ビーム描画装置
US9530616B2 (en) 2014-10-03 2016-12-27 Nuflare Technology, Inc. Blanking aperture array and charged particle beam writing apparatus

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Publication number Publication date
JP2006019438A (ja) 2006-01-19

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