JP4703277B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4703277B2 JP4703277B2 JP2005172667A JP2005172667A JP4703277B2 JP 4703277 B2 JP4703277 B2 JP 4703277B2 JP 2005172667 A JP2005172667 A JP 2005172667A JP 2005172667 A JP2005172667 A JP 2005172667A JP 4703277 B2 JP4703277 B2 JP 4703277B2
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- boron
- film
- insulating film
- silicon oxynitride
- silicon
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 88
- 229910052710 silicon Inorganic materials 0.000 claims description 82
- 239000010703 silicon Substances 0.000 claims description 82
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 80
- 229910052796 boron Inorganic materials 0.000 claims description 80
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 47
- 229920005591 polysilicon Polymers 0.000 claims description 47
- 229910052698 phosphorus Inorganic materials 0.000 claims description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 33
- 239000011574 phosphorus Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 39
- 229910052799 carbon Inorganic materials 0.000 description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 33
- 239000007789 gas Substances 0.000 description 28
- 229910052757 nitrogen Inorganic materials 0.000 description 20
- 239000013078 crystal Substances 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229910021478 group 5 element Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002779 inactivation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910000074 antimony hydride Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000072 bismuth hydride Inorganic materials 0.000 description 1
- BPBOBPIKWGUSQG-UHFFFAOYSA-N bismuthane Chemical compound [BiH3] BPBOBPIKWGUSQG-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明に係る第1の実施形態に従ったP型MOSトランジスタ100(以下、単に、トランジスタ100という)の部分的な断面図である。トランジスタ100は、半導体基板10と、ゲート絶縁膜20と、ゲート電極30とを備えている。
シリケート、アルミネート等のいずれでもよい。図1には、シリコン酸化膜21、シリコン窒化膜22およびシリコン酸化膜23から成るシリコン酸窒化膜20を図示している。本実施形態において、シリコン酸窒化膜20は、シリコン酸化膜21、シリコン窒化膜22およびシリコン酸化膜23の3層から成るONO膜である。しかし、シリコン酸窒化膜20は、単層のSiON層であってもよい。
第2の実施形態では、ゲート絶縁膜20とゲート電極30との界面部分40に炭素を導入する。第2の実施形態は、その他の点で第1の実施形態と同様である。従って、第2の実施形態に従ったトランジスタの断面構造は、図1と同様となるので省略する。
10 半導体基板
20 ゲート絶縁膜
30 ゲート電極
40 界面部分
Claims (6)
- 半導体基板上にシリコン酸窒化膜からなる絶縁膜を形成し、
前記絶縁膜上に硼素を含むP型ポリシリコンからなる電極を形成し、
その後、熱処理を行うことを具備し、
前記絶縁膜形成後、前記電極の形成前に、前記電極の硼素と結合して該硼素を捕捉する燐を前記絶縁膜上に堆積することをさらに具備することを特徴とする半導体装置の製造方法。 - 前記燐の堆積工程において、チャンバ内にPH3ガスを導入することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記絶縁膜と前記電極との界面部分における燐の濃度は、前記熱処理後において、1018cm−3以上であることを特徴とする請求項1または請求項2のいずれかに記載の半導体装置の製造方法。
- 前記絶縁膜はゲート絶縁膜であり、
前記電極はゲート電極であることを特徴とする請求項1から請求項3のいずれかに記載の半導体装置の製造方法。 - 前記電極は、硼素を含む半導体材料を前記絶縁膜上に堆積することによって形成されることを特徴とする請求項1から請求項4のいずれかに記載の半導体装置の製造方法。
- 前記電極は、半導体材料を堆積した後、該半導体材料へ硼素を注入することによって形成されることを特徴とする請求項1から請求項4のいずれかに記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005172667A JP4703277B2 (ja) | 2005-06-13 | 2005-06-13 | 半導体装置の製造方法 |
US11/287,192 US7586163B2 (en) | 2005-06-13 | 2005-11-28 | Semiconductor device having an electrode containing boron and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005172667A JP4703277B2 (ja) | 2005-06-13 | 2005-06-13 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006351626A JP2006351626A (ja) | 2006-12-28 |
JP4703277B2 true JP4703277B2 (ja) | 2011-06-15 |
Family
ID=37523397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005172667A Expired - Fee Related JP4703277B2 (ja) | 2005-06-13 | 2005-06-13 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (1) | US7586163B2 (ja) |
JP (1) | JP4703277B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
US7776765B2 (en) | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US7563730B2 (en) | 2006-08-31 | 2009-07-21 | Micron Technology, Inc. | Hafnium lanthanide oxynitride films |
JP5372394B2 (ja) * | 2008-03-14 | 2013-12-18 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR20130073673A (ko) * | 2011-12-23 | 2013-07-03 | 에스케이하이닉스 주식회사 | 폴리게이트를 갖는 반도체소자 및 그 제조방법 |
JP6248574B2 (ja) * | 2013-11-22 | 2017-12-20 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR20200107599A (ko) * | 2019-03-08 | 2020-09-16 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
JP7405027B2 (ja) * | 2020-07-07 | 2023-12-26 | 豊田合成株式会社 | 半導体装置とその製造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62130522A (ja) * | 1985-12-02 | 1987-06-12 | Toshiba Corp | 半導体装置の製造方法 |
JPH06326316A (ja) * | 1993-05-13 | 1994-11-25 | Nec Corp | 半導体装置の製造方法 |
JPH08264774A (ja) * | 1995-03-27 | 1996-10-11 | Nippondenso Co Ltd | 絶縁ゲート型電界効果トランジスタ及びその製造方法 |
JPH1012874A (ja) * | 1996-06-27 | 1998-01-16 | Nec Corp | 電界効果トランジスタの製造方法 |
JPH11111978A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Corp | 半導体装置 |
JP2000049159A (ja) * | 1998-05-29 | 2000-02-18 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2000228522A (ja) * | 1999-02-08 | 2000-08-15 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2001044426A (ja) * | 1999-07-30 | 2001-02-16 | Nec Corp | pチャネルMOSトランジスタおよび半導体装置の製造方法 |
JP2001339061A (ja) * | 2000-05-30 | 2001-12-07 | Univ Nagoya | Mosデバイス及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4343409B2 (ja) | 2000-08-17 | 2009-10-14 | 株式会社富士通ソーシアルサイエンスラボラトリ | インターネットメールシステム及び記録媒体 |
US7119016B2 (en) * | 2003-10-15 | 2006-10-10 | International Business Machines Corporation | Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion |
US7611943B2 (en) * | 2004-10-20 | 2009-11-03 | Texas Instruments Incorporated | Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation |
-
2005
- 2005-06-13 JP JP2005172667A patent/JP4703277B2/ja not_active Expired - Fee Related
- 2005-11-28 US US11/287,192 patent/US7586163B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62130522A (ja) * | 1985-12-02 | 1987-06-12 | Toshiba Corp | 半導体装置の製造方法 |
JPH06326316A (ja) * | 1993-05-13 | 1994-11-25 | Nec Corp | 半導体装置の製造方法 |
JPH08264774A (ja) * | 1995-03-27 | 1996-10-11 | Nippondenso Co Ltd | 絶縁ゲート型電界効果トランジスタ及びその製造方法 |
JPH1012874A (ja) * | 1996-06-27 | 1998-01-16 | Nec Corp | 電界効果トランジスタの製造方法 |
JPH11111978A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Corp | 半導体装置 |
JP2000049159A (ja) * | 1998-05-29 | 2000-02-18 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2000228522A (ja) * | 1999-02-08 | 2000-08-15 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2001044426A (ja) * | 1999-07-30 | 2001-02-16 | Nec Corp | pチャネルMOSトランジスタおよび半導体装置の製造方法 |
JP2001339061A (ja) * | 2000-05-30 | 2001-12-07 | Univ Nagoya | Mosデバイス及びその製造方法 |
Also Published As
Publication number | Publication date |
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JP2006351626A (ja) | 2006-12-28 |
US7586163B2 (en) | 2009-09-08 |
US20060278940A1 (en) | 2006-12-14 |
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