JP4696520B2 - 電界効果型トランジスタ及びその製造方法 - Google Patents

電界効果型トランジスタ及びその製造方法 Download PDF

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JP4696520B2
JP4696520B2 JP2004292388A JP2004292388A JP4696520B2 JP 4696520 B2 JP4696520 B2 JP 4696520B2 JP 2004292388 A JP2004292388 A JP 2004292388A JP 2004292388 A JP2004292388 A JP 2004292388A JP 4696520 B2 JP4696520 B2 JP 4696520B2
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fine particles
forming region
channel forming
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channel
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JP2006108354A (ja
JP2006108354A5 (enExample
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裕輝 石岡
眞一郎 近藤
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Sony Corp
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JP2004292388A 2004-10-05 2004-10-05 電界効果型トランジスタ及びその製造方法 Expired - Fee Related JP4696520B2 (ja)

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JP2004292388A JP4696520B2 (ja) 2004-10-05 2004-10-05 電界効果型トランジスタ及びその製造方法

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JP2006108354A JP2006108354A (ja) 2006-04-20
JP2006108354A5 JP2006108354A5 (enExample) 2007-09-27
JP4696520B2 true JP4696520B2 (ja) 2011-06-08

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4876520B2 (ja) * 2005-10-07 2012-02-15 ソニー株式会社 不揮発性半導体メモリ及びその製造方法
JP2008034578A (ja) * 2006-07-28 2008-02-14 Sony Corp 半導体装置およびその製造方法
JP2009187681A (ja) * 2008-02-01 2009-08-20 Tokyo Electron Ltd 有機薄膜の形成方法及び有機デバイス
CN113659005A (zh) * 2021-08-10 2021-11-16 南京大学 基于纳米粒子点阵的柔性场效应晶体管及制备方法和应用

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* Cited by examiner, † Cited by third party
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AU2003235181A1 (en) * 2002-04-22 2003-11-03 Konica Minolta Holdings, Inc. Organic semiconductor composition, organic semiconductor element, and process for producing the same
JP2004031933A (ja) * 2002-05-09 2004-01-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート
JP4635410B2 (ja) * 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法

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