CN113659005A - 基于纳米粒子点阵的柔性场效应晶体管及制备方法和应用 - Google Patents
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Abstract
本发明公开了基于纳米粒子点阵的柔性场效应晶体管及制备方法和应用，所述场效应晶体管以高分子聚合物薄膜为基底，纳米粒子点阵为导电沟道，并通过栅极电压的改变调控纳米粒子点阵中的库仑阻塞作用，从而调控纳米粒子点阵两侧电极之间的电流，实现柔性场效应晶体管的功能。与现有技术相比，本发明具有以下优点：(1)能够通过栅极电压调控金属纳米粒子点阵隧穿电导，因此可以灵敏地响应栅极电压对源漏极电流的影响；(2)具有体积小、能耗低、低噪声、高柔性的优点；(3)具有很高的灵敏度，结构简单，成本低，能够模块化制备与封装，可用于柔性集成电路，微电极系统等多种领域。
Description
技术领域
本发明属于电压控制电学器件，涉及一种继承集成电路或微电极系统中场效应晶体管的改良，具体为基于纳米粒子点阵的柔性场效应晶体管及制备方法和应用。
背景技术
场效应晶体管是一种由载流子参与导电，用输入电压控制输出电流的电学元件，在信息传递，集成电路，自动化控制等领域具有不可或缺的作用。场效应晶体管主要分为两种类型：分别是结型场效应晶体管和金属-氧化物半导体场效应晶体管，均具有噪音小、输入电阻高(107-1015Ω)、动态范围大、功耗低、易于集成、没有二次击穿现象、制造工艺简单有利于大规模集成等优点，因此常作为微电子领域中核心集成电路技术的重要元件。基于纳米粒子及其点阵的场效应晶体管属于一种单电子器件，其工作机理与传统结型场效应晶体管和金属-氧化物半导体场效应晶体管完全不同，新型的纳米器件更多的是利用纳米尺度下量子力学现象的优点，通过控制纳米点阵中电子的传输实现相应的逻辑操作，其优点是具有超高的灵敏度、超微功耗、超低噪声。单电子晶体管的基本组成单元是隧穿结和库仑岛，电子发生量子隧穿通过隧穿结形成源漏电流，这样单电子即可完成输运特性。这种单电子纳米器件为克服短沟道效应提供了新的解决方案。
柔性电子器件是将有机/无机材料电子器件制作在柔性/可延性基板上的新兴电子技术。相对于传统电子器件柔性电子器件具有更大的灵活性，能够在一定程度上适应不同的工作环境，满足设备的形变要求。柔性电子器件在信息、能源、医疗、制造等各个领域中的重要性日益凸显。传统的半导体器件，以硅等无机材料为基底，由于基底不具有延展性，难以与柔性器件相兼容，制约了柔性电子设备的发展。柔性电子器件对电路的制作材料、制备条件以及组成电路的各种电子器件的性能，都提出了新的挑战和要求。
现有技术中在柔性材料上沉积纳米粒子点阵，通过隧穿电导感应衬底上的微小形变，并以此为基础，开发出了一系列纳米粒子点阵量子电导的应力应变传感器、振动传感器、气压传感器(参考文献如Nat.Commun.2019,10(1),4024.参考专利如CN109700451A等)但在柔性材料上沉积纳米粒子点阵用于场效应管的器件尚未被研究开发，相比于传统的硅基场效应晶体管，具有工艺简单、携带方便、应用场景广泛等优点。
发明内容
解决的技术问题：为了克服现有技术的不足，本发明采用纳米粒子点阵导电沟道代替传统的导电沟道，并用绝缘的有机高聚物薄膜代替传统场效应晶体管器件的基底硅片。在薄膜表面涂覆用于测量纳米粒子点阵电导的源漏极，并在电极间沉积一定覆盖率的金属纳米粒子点阵。在高聚物薄膜的背面涂覆栅极，通过栅压的大小调控纳米粒子点阵中的库仑阻塞作用，从而调控源漏极之间的电流，实现场效应晶体管的功能。由于纳米粒子点阵的隧穿电导对于纳米粒子的覆盖率高度敏感，因此可通过监控纳米粒子点阵的电导实现预定覆盖率的纳米粒子点阵的可控制备。鉴于此，本发明提供了基于纳米粒子点阵的柔性场效应晶体管及制备方法和应用。
技术方案：基于纳米粒子点阵的柔性场效应晶体管，所述场效应晶体管以高分子聚合物薄膜为基底，纳米粒子点阵为导电沟道，并通过栅极电压的改变调控纳米粒子点阵中的库仑阻塞作用，从而调控纳米粒子点阵两侧电极之间的电流，实现柔性场效应晶体管的功能。
优选的，所述场效应晶体管包括高分子聚合物绝缘衬底薄膜、设于薄膜一侧的纳米粒子点阵导电沟道、设于薄膜另一侧的栅极，其中纳米粒子点阵导电沟道两侧分别设有源极和漏极。
优选的，高分子聚合物绝缘衬底薄膜的厚度为0.0001mm-0.5mm，电阻率高于109Ω·m。
优选的，高分子聚合物绝缘衬底薄膜为聚对苯二甲酸乙二醇酯、聚甲基丙烯酸甲酯或聚二甲基硅氧烷。
优选的，纳米粒子点阵导电沟道的材质为金、银、钯、铬、铝的金属纳米粒子，或是掺杂硅、砷化镓、氮化硼的半导体量子点，纳米粒子点阵的覆盖率为60％-80％，纳米粒子的粒径为5nm-30nm。
优选的，栅极电压范围-100V-100V。
优选的，源极和漏极的材质为金、银、铝的导电金属或氧化铟锡的导电化合物，厚度均为50nm-300nm，面积均为1mm2-100mm2，两极间宽度为1μm-100μm。
以上任一所述基于纳米粒子点阵的柔性场效应晶体管的制备方法，所述方法包括以下步骤：
S1、选择洁净、表面光滑无划痕的高分子聚合物绝缘衬底薄膜作为衬底，在薄膜上镀覆源极、漏极和栅极；
S2、通过气体聚集团簇源产生纳米粒子束流，在源极和漏极之间沉积纳米粒子点阵导电沟道；
S3、通过电极引线连接源极、漏极，接入源极、漏极偏置电源和栅极电源，及测量纳米粒子电导的外电路，通过栅极电压的改变调控纳米粒子点阵中的库仑阻塞作用，从而调控纳米粒子点阵两侧源极、漏极之间的电流，实现柔性场效应晶体管的功能。
以上任一所述基于纳米粒子点阵的柔性场效应晶体管在制备柔性集成电路中的应用。
以上任一所述基于纳米粒子点阵的柔性场效应晶体管在制备微电极系统中的应用。
本发明所述基于纳米粒子点阵的柔性场效应晶体管的工作原理在于：本发明采用柔性衬底及一种可控的纳米粒子沉积方式完成柔性场效应晶体管的制备，其本质上是一种电压-电流调控的场效应晶体管器件。所不同处在于，本发明并非通过传统反型层形成的导电沟道，而是利用纳米粒子点阵中基于量子隧穿电导和库仑阻塞效应的电子传输过程。在纳米粒子点阵当中，相邻纳米粒子之间的面间距在1nm量级，故而在点阵两侧施加高于阈值的偏压，纳米粒子点阵就会存在一个隧穿电导，单个的纳米粒子就可以作为一个隧道结。同时，纳米粒子点阵中还存在库仑阻塞效应，源、漏电极之间的隧穿电流的大小还依赖于库仑阻塞的程度。而通过栅极电压可以改变库仑阻塞的状态，从而改变源漏极之间的隧穿电流。所以基于纳米粒子点阵制备的场效应晶体管会对栅极电压的调控有着非常灵敏的响应。这种基于纳米粒子点阵和柔性衬底的器件一方面可以打破金属-氧化物半导体场效应晶体管的短沟道效应的限制，另一方面可以克服传统硅基技术无法应用于柔性器件的不足。
有益效果：(1)本发明所述基于纳米粒子点阵的柔性场效应晶体管能够通过栅极电压调控金属纳米粒子点阵隧穿电导，因此所述场效应晶体管可以灵敏地响应栅极电压对源漏极电流的影响；(2)本发明所述场效应晶体管具有体积小、能耗低、低噪声、高柔性的优点；(3)本发明所述场效应晶体管具有很高的灵敏度，结构简单，成本低，能够模块化制备与封装，可用于柔性集成电路，微电极系统等多种领域。
附图说明
图1是本发明所述基于纳米粒子点阵的场效应晶体管的结构示意图；
其中，1为栅极，2为高分子聚合物绝缘衬底薄膜，3为源极，4为漏极，5为纳米粒子点阵导电沟道；
图2是实施例1中本发明所述源漏电流随栅压变化的变化曲线；Vds为源漏电压，Ids为源漏电流，Vg为栅压；其中A为栅压0-100V，B为栅压-100-0V；
图3是实施例2中本发明所述源漏电流随栅压变化的变化曲线；Vds为源漏电压，Ids为源漏电流，Vg为栅压；其中A为栅压0-100V，B为栅压-100-0V；
图4是本发明所述场效应晶体管日常工作场景模拟结果图。
具体实施方式
以下实施例进一步说明本发明的内容，但不应理解为对本发明的限制。在不背离本发明精神和实质的情况下，对本发明方法、步骤或条件所作的修改和替换，均属于本发明的范围。若未特别指明，实施例中所用的技术手段为本领域技术人员所熟知的常规手段。
实施例1
如图1所示，基于纳米粒子点阵的柔性场效应晶体管，所述场效应晶体管以高分子聚合物薄膜为基底，纳米粒子点阵为导电沟道，并通过栅极电压的改变调控纳米粒子点阵中的库仑阻塞作用，从而调控纳米粒子点阵两侧电极之间的电流，实现柔性场效应晶体管的功能。
所述场效应晶体管包括高分子聚合物绝缘衬底薄膜2、设于薄膜一侧的纳米粒子点阵导电沟道5、设于薄膜另一侧的栅极1，其中纳米粒子点阵导电沟道5两侧分别设有源极3和漏极4。
其中高分子聚合物绝缘衬底薄膜2的厚度为0.05mm，电阻率为1×109Ω·m；高分子聚合物绝缘衬底薄膜2为聚对苯二甲酸乙二醇酯。
纳米粒子点阵导电沟道5的材质为钯的金属纳米粒子，纳米粒子点阵的覆盖率为60％，纳米粒子的粒径为15nm。
栅极1电压范围-100V-100V；源极3和漏极4的材质为银，厚度均为100nm，面积均为50mm2，两极间宽度为30μm。
以上所述基于纳米粒子点阵的柔性场效应晶体管由以下方法制得，所述方法包括以下步骤：
S1、选择洁净、表面光滑无划痕的高分子聚合物绝缘衬底薄膜2作为衬底，在薄膜上镀覆源极3、漏极4和栅极1；
S2、通过磁控等离子体气体聚集团簇源产生纳米粒子束流，在源极3和漏极4之间沉积纳米粒子点阵导电沟道5；
S3、通过电极引线连接源极3、漏极4，接入源极3、漏极4偏置电源和栅极1电源，及测量纳米粒子电导的外电路，通过栅极1电压的改变调控纳米粒子点阵中的库仑阻塞作用，从而调控纳米粒子点阵两侧源极3、漏极4之间的电流，实现柔性场效应晶体管的功能。
如图2所示，将栅极1、源极3、漏极4通过铜线连接测试电路，改变栅极电压，记录栅压Vg对源漏电流Ids的影响，将场效应晶体管置于测试电路中，测量出纳米粒子场效应晶体管源漏电流随栅压实时响应曲线的变化如图2所示，从图中可见源漏电流随着栅压的增加有着显著变化，变化的幅度在10％以上，而且无论是正相偏压还是反相偏压均有着很好的响应。
实施例2
与实施例1的区别在于，纳米粒子点阵的覆盖率为80％。
如图3所示，将栅极1、源极3、漏极4通过铜线连接测试电路，改变栅极1电压，记录栅压Vg对源漏电流Ids的影响，将场效应晶体管置于测试电路中，测量出纳米粒子场效应晶体管源漏电流随栅压实时响应曲线的变化如图3所示，当沉积率提高时，源漏电流随着栅压的增加也有明显变化，对正相偏压和反相偏压均有效。
实施例3
为了验证基于纳米粒子点阵的柔性场效应晶体管能够在日常使用场景工作，本实施例将场效应晶体管接入外电路，加了一个5V的电压，并记录源漏电流随着栅极电压的响应情况，结果如图4所示，可以看出，源漏电流可以随着栅极电压的改变做出有效响应。该试验证明了本发明中的场效应晶体管工作的可靠性，能够投入到工业生产中使用。
Claims (10)
1.基于纳米粒子点阵的柔性场效应晶体管，其特征在于，所述场效应晶体管以高分子聚合物薄膜为基底，纳米粒子点阵为导电沟道，并通过栅极电压的改变调控纳米粒子点阵中的库仑阻塞作用，从而调控纳米粒子点阵两侧电极之间的电流，实现柔性场效应晶体管的功能。
2.根据权利要求1所述的基于纳米粒子点阵的柔性场效应晶体管，其特征在于，所述场效应晶体管包括高分子聚合物绝缘衬底薄膜(2)、设于薄膜一侧的纳米粒子点阵导电沟道(5)、设于薄膜另一侧的栅极(1)，其中纳米粒子点阵导电沟道(5)两侧分别设有源极(3)和漏极(4)。
3.根据权利要求2所述的基于纳米粒子点阵的柔性场效应晶体管，其特征在于，高分子聚合物绝缘衬底薄膜(2)的厚度为0.0001mm-0.5mm，电阻率高于109Ω·m。
4.根据权利要求2所述的基于纳米粒子点阵的柔性场效应晶体管，其特征在于，高分子聚合物绝缘衬底薄膜(2)为聚对苯二甲酸乙二醇酯、聚甲基丙烯酸甲酯或聚二甲基硅氧烷。
5.根据权利要求2所述的基于纳米粒子点阵的柔性场效应晶体管，其特征在于，纳米粒子点阵导电沟道(5)的材质为金、银、钯、铬、铝的金属纳米粒子，或是掺杂硅、砷化镓、氮化硼的半导体量子点，纳米粒子点阵的覆盖率为60％-80％，纳米粒子的粒径为5nm-30nm。
6.根据权利要求2所述的基于纳米粒子点阵的柔性场效应晶体管，其特征在于，栅极(1)电压范围-100V-100V。
7.根据权利要求2所述的基于纳米粒子点阵的柔性场效应晶体管，其特征在于，源极(3)和漏极(4)的材质为金、银、铝的导电金属或氧化铟锡的导电化合物，厚度均为50nm-300nm，面积均为1mm2-100mm2，两极间宽度为1μm-100μm。
8.权利要求1-7任一所述基于纳米粒子点阵的柔性场效应晶体管的制备方法，其特征在于，所述方法包括以下步骤：
S1、选择洁净、表面光滑无划痕的高分子聚合物绝缘衬底薄膜(2)作为衬底，在薄膜上镀覆源极(3)、漏极(4)和栅极(1)；
S2、通过气体聚集团簇源产生纳米粒子束流，在源极(3)和漏极(4)之间沉积纳米粒子点阵导电沟道(5)；
S3、通过电极引线连接源极(3)、漏极(4)，接入源极(3)、漏极(4)偏置电源和栅极(1)电源，及测量纳米粒子电导的外电路，通过栅极(1)电压的改变调控纳米粒子点阵中的库仑阻塞作用，从而调控纳米粒子点阵两侧源极(3)、漏极(4)之间的电流，实现柔性场效应晶体管的功能。
9.权利要求1-7任一所述基于纳米粒子点阵的柔性场效应晶体管在制备柔性集成电路中的应用。
10.权利要求1-7任一所述基于纳米粒子点阵的柔性场效应晶体管在制备微电极系统中的应用。
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