JP4695402B2 - ショットキーバリアダイオードの製造方法 - Google Patents

ショットキーバリアダイオードの製造方法 Download PDF

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Publication number
JP4695402B2
JP4695402B2 JP2005017973A JP2005017973A JP4695402B2 JP 4695402 B2 JP4695402 B2 JP 4695402B2 JP 2005017973 A JP2005017973 A JP 2005017973A JP 2005017973 A JP2005017973 A JP 2005017973A JP 4695402 B2 JP4695402 B2 JP 4695402B2
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Japan
Prior art keywords
concentration
low
forming
oxide film
recess
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JP2005017973A
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Japanese (ja)
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JP2006210479A (ja
JP2006210479A5 (enExample
Inventor
直敏 鹿島
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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JP2005017973A 2005-01-26 2005-01-26 ショットキーバリアダイオードの製造方法 Expired - Fee Related JP4695402B2 (ja)

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JP2005017973A JP4695402B2 (ja) 2005-01-26 2005-01-26 ショットキーバリアダイオードの製造方法

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JP2005017973A JP4695402B2 (ja) 2005-01-26 2005-01-26 ショットキーバリアダイオードの製造方法

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JP2006210479A JP2006210479A (ja) 2006-08-10
JP2006210479A5 JP2006210479A5 (enExample) 2008-03-13
JP4695402B2 true JP4695402B2 (ja) 2011-06-08

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681318A (zh) * 2012-09-18 2014-03-26 桂林斯壮微电子有限责任公司 使用硅的选择氧化技术制造结势垒肖特基二极管的方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100888290B1 (ko) 2007-08-10 2009-03-11 주식회사 케이이씨 쇼트키 배리어 다이오드 및 그 제조 방법
US8193602B2 (en) * 2010-04-20 2012-06-05 Texas Instruments Incorporated Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
CN103325846B (zh) * 2013-06-19 2015-09-16 张家港凯思半导体有限公司 一种斜沟槽肖特基势垒整流器件的制造方法
CN103594524A (zh) * 2013-11-25 2014-02-19 杭州士兰集成电路有限公司 肖特基二极管及其制作方法
CN111146294B (zh) * 2019-12-05 2023-11-07 中国电子科技集团公司第十三研究所 肖特基二极管及其制备方法
CN115566076A (zh) * 2022-08-30 2023-01-03 西安电子科技大学 一种沟槽有源区结构的碳化硅功率器件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138772A (ja) * 1986-11-29 1988-06-10 Tdk Corp シヨツトキバリア形半導体装置およびその製造方法
JPH09307120A (ja) * 1996-05-14 1997-11-28 Rohm Co Ltd ショットキーバリア半導体装置およびその製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681318A (zh) * 2012-09-18 2014-03-26 桂林斯壮微电子有限责任公司 使用硅的选择氧化技术制造结势垒肖特基二极管的方法

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