JP2006210479A5 - - Google Patents
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- JP2006210479A5 JP2006210479A5 JP2005017973A JP2005017973A JP2006210479A5 JP 2006210479 A5 JP2006210479 A5 JP 2006210479A5 JP 2005017973 A JP2005017973 A JP 2005017973A JP 2005017973 A JP2005017973 A JP 2005017973A JP 2006210479 A5 JP2006210479 A5 JP 2006210479A5
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- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005017973A JP4695402B2 (ja) | 2005-01-26 | 2005-01-26 | ショットキーバリアダイオードの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005017973A JP4695402B2 (ja) | 2005-01-26 | 2005-01-26 | ショットキーバリアダイオードの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006210479A JP2006210479A (ja) | 2006-08-10 |
| JP2006210479A5 true JP2006210479A5 (enExample) | 2008-03-13 |
| JP4695402B2 JP4695402B2 (ja) | 2011-06-08 |
Family
ID=36967004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005017973A Expired - Fee Related JP4695402B2 (ja) | 2005-01-26 | 2005-01-26 | ショットキーバリアダイオードの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4695402B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100888290B1 (ko) | 2007-08-10 | 2009-03-11 | 주식회사 케이이씨 | 쇼트키 배리어 다이오드 및 그 제조 방법 |
| US8193602B2 (en) * | 2010-04-20 | 2012-06-05 | Texas Instruments Incorporated | Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown |
| CN103681318B (zh) * | 2012-09-18 | 2016-06-29 | 桂林斯壮微电子有限责任公司 | 使用硅的选择氧化技术制造结势垒肖特基二极管的方法 |
| CN103325846B (zh) * | 2013-06-19 | 2015-09-16 | 张家港凯思半导体有限公司 | 一种斜沟槽肖特基势垒整流器件的制造方法 |
| CN103594524A (zh) * | 2013-11-25 | 2014-02-19 | 杭州士兰集成电路有限公司 | 肖特基二极管及其制作方法 |
| CN111146294B (zh) * | 2019-12-05 | 2023-11-07 | 中国电子科技集团公司第十三研究所 | 肖特基二极管及其制备方法 |
| CN115566076A (zh) * | 2022-08-30 | 2023-01-03 | 西安电子科技大学 | 一种沟槽有源区结构的碳化硅功率器件 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63138772A (ja) * | 1986-11-29 | 1988-06-10 | Tdk Corp | シヨツトキバリア形半導体装置およびその製造方法 |
| JPH09307120A (ja) * | 1996-05-14 | 1997-11-28 | Rohm Co Ltd | ショットキーバリア半導体装置およびその製法 |
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2005
- 2005-01-26 JP JP2005017973A patent/JP4695402B2/ja not_active Expired - Fee Related