JP4689064B2 - 露光装置およびデバイス製造方法 - Google Patents

露光装置およびデバイス製造方法 Download PDF

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Publication number
JP4689064B2
JP4689064B2 JP2001085531A JP2001085531A JP4689064B2 JP 4689064 B2 JP4689064 B2 JP 4689064B2 JP 2001085531 A JP2001085531 A JP 2001085531A JP 2001085531 A JP2001085531 A JP 2001085531A JP 4689064 B2 JP4689064 B2 JP 4689064B2
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JP
Japan
Prior art keywords
chamber
gas
sealed container
optical unit
projection optical
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001085531A
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English (en)
Japanese (ja)
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JP2001345262A5 (enExample
JP2001345262A (ja
Inventor
真一 原
裕 田中
和之 春見
融 平林
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001085531A priority Critical patent/JP4689064B2/ja
Priority to US09/818,625 priority patent/US6714277B2/en
Publication of JP2001345262A publication Critical patent/JP2001345262A/ja
Publication of JP2001345262A5 publication Critical patent/JP2001345262A5/ja
Application granted granted Critical
Publication of JP4689064B2 publication Critical patent/JP4689064B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001085531A 2000-03-30 2001-03-23 露光装置およびデバイス製造方法 Expired - Fee Related JP4689064B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001085531A JP4689064B2 (ja) 2000-03-30 2001-03-23 露光装置およびデバイス製造方法
US09/818,625 US6714277B2 (en) 2000-03-30 2001-03-28 Exposure apparatus, gas replacement method, semiconductor device manufacturing method, semiconductor manufacturing factory and exposure apparatus maintenance method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000093686 2000-03-30
JP2000093686 2000-03-30
JP2000-93686 2000-03-30
JP2001085531A JP4689064B2 (ja) 2000-03-30 2001-03-23 露光装置およびデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2001345262A JP2001345262A (ja) 2001-12-14
JP2001345262A5 JP2001345262A5 (enExample) 2008-05-08
JP4689064B2 true JP4689064B2 (ja) 2011-05-25

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ID=26588857

Family Applications (1)

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JP2001085531A Expired - Fee Related JP4689064B2 (ja) 2000-03-30 2001-03-23 露光装置およびデバイス製造方法

Country Status (2)

Country Link
US (1) US6714277B2 (enExample)
JP (1) JP4689064B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250028256A1 (en) * 2021-11-17 2025-01-23 Tokyo Electron Limited Substrate treatment system and substrate treatment method

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JPH11312640A (ja) * 1998-02-25 1999-11-09 Canon Inc 処理装置および該処理装置を用いたデバイス製造方法
US6937316B2 (en) * 2001-08-15 2005-08-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US6778258B2 (en) * 2001-10-19 2004-08-17 Asml Holding N.V. Wafer handling system for use in lithography patterning
US7004715B2 (en) * 2002-01-09 2006-02-28 Asml Holding N.V. Apparatus for transferring and loading a reticle with a robotic reticle end-effector
EP1333329B1 (en) * 2002-02-01 2008-07-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101532824B1 (ko) 2003-04-09 2015-07-01 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
SG141228A1 (en) * 2003-05-19 2008-04-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4370924B2 (ja) 2003-08-27 2009-11-25 株式会社ニコン 真空装置、真空装置の運転方法、露光装置、及び露光装置の運転方法
TWI609409B (zh) 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TWI519819B (zh) 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
JP2005158926A (ja) * 2003-11-25 2005-06-16 Canon Inc ロードロック装置および方法
JP4478440B2 (ja) * 2003-12-02 2010-06-09 キヤノン株式会社 ロードロック装置および方法
JP4564742B2 (ja) 2003-12-03 2010-10-20 キヤノン株式会社 露光装置及びデバイス製造方法
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI609410B (zh) 2004-02-06 2017-12-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US7184123B2 (en) * 2004-03-24 2007-02-27 Asml Netherlands B.V. Lithographic optical system
JP4547997B2 (ja) * 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
JP2006165371A (ja) * 2004-12-09 2006-06-22 Canon Inc 転写装置およびデバイス製造方法
TWI423301B (zh) * 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
KR20170089028A (ko) 2005-05-12 2017-08-02 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 디바이스 제조 방법
US7385673B2 (en) * 2005-06-10 2008-06-10 International Business Machines Corporation Immersion lithography with equalized pressure on at least projection optics component and wafer
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
JP2007281142A (ja) * 2006-04-05 2007-10-25 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
JP2008216949A (ja) * 2007-02-06 2008-09-18 Toppan Printing Co Ltd 感光性樹脂版用露光装置、および有機ｅｌ素子の製造方法
US8749753B2 (en) * 2007-04-27 2014-06-10 Nikon Corporation Movable body apparatus, exposure apparatus and optical system unit, and device manufacturing method
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP2010040831A (ja) * 2008-08-06 2010-02-18 Orc Mfg Co Ltd 露光装置における基板の露光方法
JP5644101B2 (ja) * 2009-12-22 2014-12-24 株式会社ブイ・テクノロジー 露光装置
JP7036666B2 (ja) * 2018-05-23 2022-03-15 三菱重工業株式会社 レーザ装置及び加工装置

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JPH01225118A (ja) * 1988-03-04 1989-09-08 Canon Inc Ｘ線露光装置
FR2639567B1 (fr) * 1988-11-25 1991-01-25 France Etat Machine a microfaisceau laser d'intervention sur des objets a couche mince, en particulier pour la gravure ou le depot de matiere par voie chimique en presence d'un gaz reactif
JP2731950B2 (ja) 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
JPH0388400A (ja) * 1989-08-31 1991-04-12 Canon Inc 真空装置
JPH03108311A (ja) * 1989-09-21 1991-05-08 Canon Inc Ｘ線露光装置
JP2766935B2 (ja) 1989-10-20 1998-06-18 キヤノン株式会社 Ｘ線露光装置
EP0463853B1 (en) 1990-06-29 1998-11-04 Canon Kabushiki Kaisha Vacuum chuck
US6341006B1 (en) * 1995-04-07 2002-01-22 Nikon Corporation Projection exposure apparatus
JP3629790B2 (ja) * 1995-12-05 2005-03-16 株式会社ニコン 露光装置
JP4011643B2 (ja) * 1996-01-05 2007-11-21 キヤノン株式会社 半導体製造装置
TWI249760B (en) * 1996-07-31 2006-02-21 Canon Kk Remote maintenance system
JPH11224839A (ja) * 1998-02-04 1999-08-17 Canon Inc 露光装置とデバイス製造方法、ならびに該露光装置の光学素子クリーニング方法
US6333775B1 (en) * 1999-01-13 2001-12-25 Euv Llc Extreme-UV lithography vacuum chamber zone seal
JP2002118054A (ja) * 2000-10-11 2002-04-19 Nikon Corp 真空チャンバー及びそれを有する露光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250028256A1 (en) * 2021-11-17 2025-01-23 Tokyo Electron Limited Substrate treatment system and substrate treatment method

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Publication number Publication date
US6714277B2 (en) 2004-03-30
US20010035942A1 (en) 2001-11-01
JP2001345262A (ja) 2001-12-14

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