JP4670151B2 - 面発光型発光素子及びその製造方法 - Google Patents

面発光型発光素子及びその製造方法 Download PDF

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Publication number
JP4670151B2
JP4670151B2 JP2001005173A JP2001005173A JP4670151B2 JP 4670151 B2 JP4670151 B2 JP 4670151B2 JP 2001005173 A JP2001005173 A JP 2001005173A JP 2001005173 A JP2001005173 A JP 2001005173A JP 4670151 B2 JP4670151 B2 JP 4670151B2
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Japan
Prior art keywords
layer
light
semiconductor layer
nitride semiconductor
emitting
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Expired - Fee Related
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JP2001005173A
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Japanese (ja)
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JP2002208728A5 (enrdf_load_html_response
JP2002208728A (ja
Inventor
宏司 本浄
和之 明石
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Nichia Corp
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Nichia Corp
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JP2001005173A 2001-01-12 2001-01-12 面発光型発光素子及びその製造方法 Expired - Fee Related JP4670151B2 (ja)

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JP2001005173A JP4670151B2 (ja) 2001-01-12 2001-01-12 面発光型発光素子及びその製造方法

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JP2001005173A JP4670151B2 (ja) 2001-01-12 2001-01-12 面発光型発光素子及びその製造方法

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JP2002208728A JP2002208728A (ja) 2002-07-26
JP2002208728A5 JP2002208728A5 (enrdf_load_html_response) 2008-02-28
JP4670151B2 true JP4670151B2 (ja) 2011-04-13

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JP2001005173A Expired - Fee Related JP4670151B2 (ja) 2001-01-12 2001-01-12 面発光型発光素子及びその製造方法

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100835116B1 (ko) * 2007-04-16 2008-06-05 삼성전기주식회사 질화물 반도체 발광 소자
JP6846017B2 (ja) * 2018-06-08 2021-03-24 日亜化学工業株式会社 発光装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01110781A (ja) * 1987-10-23 1989-04-27 Nec Corp 発光ダイオード
JP2908173B2 (ja) * 1992-04-16 1999-06-21 株式会社東芝 半導体発光素子
JP3153727B2 (ja) * 1995-04-11 2001-04-09 株式会社リコー スーパールミネッセントダイオード
JP2002170986A (ja) * 2000-11-29 2002-06-14 Kyocera Corp 半導体発光装置

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JP2002208728A (ja) 2002-07-26

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