JP4664307B2 - 基板間においてプレスされるコンプライアント素子を有するデバイス - Google Patents
基板間においてプレスされるコンプライアント素子を有するデバイス Download PDFInfo
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- JP4664307B2 JP4664307B2 JP2006541256A JP2006541256A JP4664307B2 JP 4664307 B2 JP4664307 B2 JP 4664307B2 JP 2006541256 A JP2006541256 A JP 2006541256A JP 2006541256 A JP2006541256 A JP 2006541256A JP 4664307 B2 JP4664307 B2 JP 4664307B2
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- 239000000758 substrate Substances 0.000 title claims abstract description 216
- 239000000463 material Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims description 20
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 9
- 239000004642 Polyimide Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000010931 gold Substances 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Description
マイクロ製造デバイスの製造において、2つの接合された基板間の気密封止(ハーメチック:hermetic)チャンバ内において電気的な構成要素を配置することが一般的である。いくつかの用途において、2つのそのような接合された基板の間の電気的な接続性が望まれている。例えば、電気的な構成要素を、両基板上に形成することができ、その2つの基板間の電気的な接続は、該電気的な構成要素間の伝達を提供する。他の例において、2つの基板間の電気的接続によって、該基板のうちの一方の上に配置された構成要素が、他方の基板上に配置された構成要素から電力を引き込むことが可能となる。
第1の基板及び第2の基板を提供し、
前記第1の基板上のコンプライアントな第1の材料のコンプライアント素子を形成し、
第2の材料の層によって前記側面の少なくとも一部分をコーティングし、
前記第2の基板を前記コンプライアント素子の前記端部面に対してプレスし、及び、
前記基板を共に接合させる
ことを含み、
前記コンプライアント素子は、端部面と、該端部面に隣接した側面とを備え、
前記プレスすることは、前記コンプライアント素子を変形させることを含むことからなる、方法である。
Claims (16)
- 上面上に形成されたガスケットを有した該上面を有した第1の基板であって、該ガスケットが、第1のコンプライアントな材料で構成されており、及び、該第1のコンプライアントな材料が、気密封止性を高める材料によって部分的にコーティングされていることからなる、第1の基板と、
上面を有した第2の基板であって、該上面上に少なくとも1つの導電性の領域を有する、第2の基板
とを備えるデバイスであって、
前記第1の基板の前記上面が、前記第2の基板の前記上面に向き合った状態で、前記第1の基板と前記第2の基板とが共に合わせてプレスされて、これにより、前記ガスケットが変形されることとなるようにし、及び、
前記ガスケットと前記第2の基板の前記上面とが、気密封止するようにシーリングされた密閉されたチャンバを形成し、及び、少なくとも1つの導電性要素が、前記密閉されたチャンバ内において配置されており、前記第2の基板上の前記少なくとも1つの導電性の領域に直接接触していることからなる、デバイス。 - 前記導電性要素が、導電性材料によってコーティングされた第2のコンプライアントな材料で構成された柱であることからなる、請求項1に記載のデバイス。
- 前記第1のコンプライアントな材料と前記第2のコンプライアントな材料とのうちの少なくとも一方が、ポリマーを含むことからなる、請求項2に記載のデバイス。
- 前記第1のコンプライアントな材料と前記第2のコンプライアントな材料とのうちの少なくとも一方が、ポリイミドを含むことからなる、請求項2に記載のデバイス。
- 前記気密封止性を高める材料が、導電性であることからなる、請求項1に記載のデバイス。
- 前記気密封止性を高める材料が、非導電性であることからなる、請求項1に記載のデバイス。
- 前記ガスケットが内側表面と外側表面とを有しており、前記ガスケットの外側表面と、前記第1の基板の前記上面の一部と、前記第2の基板の前記上面の一部とが、前記気密封止性を高める材料によってコーティングされていることからなる、請求項1に記載のデバイス。
- 前記第1の基板と前記第2の基板とのうちの1つの上に形成された少なくとも1つの非コンプライアントなスペーサを更に備える、請求項1に記載のデバイス。
- 前記第1のコンプライアントな材料が、前記気密封止性を高める材料によって前記部分的にコーティングされていることは、製造工程において複数の前記デバイスを同時に生成する際に、前記第2の基板がダイスされる前に、前記第1の基板の一部を排除することにより生成された隙間を利用して該部分的な該コーティングを実施することによって、実現されることからなる、請求項1に記載のデバイス。
- 上面上に形成されたガスケットと少なくとも1つの柱とを有する該上面を有した第1の基板であって、該ガスケットが、内側表面と外側表面とを有し、及び、第1のコンプライアントな材料で構成されており、前記少なくとも1つの柱が、第2のコンプライアントな材料で構成されており、該第2のコンプライアントな材料が、導電性材料でコーティングされていることからなる、第1の基板と、
上面を有した第2の基板であって、該上面上に形成された少なくとも1つの導電性の領域を有する、第2の基板
とを備えるデバイスであって、
前記第1の基板の前記上面が、前記第2の基板の前記上面に向き合った状態で、前記第1の基板と前記第2の基板とが共に合わせてプレスされて、これにより、前記第1の基板の前記ガスケットと前記少なくとも1つの柱とが変形されることとなるようにし、及び、
前記ガスケットの外側表面と、前記第1の基板の前記上面の一部と、前記第2の基板の前記上面の一部とが、前記気密封止性を高める材料によってコーティングされており、これにより、前記ガスケットの内側表面と、前記第2の基板の前記上面とが、気密封止するようにシーリングされた密閉されたチャンバを形成し、前記少なくとも1つの柱が、前記密閉されたチャンバ内において配置されており、前記第2の基板上の前記少なくとも1つの導電性の領域に直接接触していることからなる、デバイス。 - 前記第1のコンプライアントな材料と前記第2のコンプライアントな材料とのうちの少なくとも一方が、ポリマーを含むことからなる、請求項10に記載のデバイス。
- 前記第1のコンプライアントな材料と前記第2のコンプライアントな材料とのうちの少なくとも一方が、ポリイミドを含むことからなる、請求項10に記載のデバイス。
- 前記気密封止性を高める材料が、導電性であることからなる、請求項10に記載のデバイス。
- 前記気密封止性を高める材料が、非導電性であることからなる、請求項10に記載のデバイス。
- 前記第1の基板と前記第2の基板とのうちの1つの上に形成された少なくとも1つの非コンプライアントなスペーサを更に備える、請求項10に記載のデバイス。
- 前記ガスケットの外側表面と、前記第1の基板の前記上面の一部と、前記第2の基板の前記上面の一部とが、前記気密封止性を高める材料によって前記部分的にコーティングされていることは、製造工程において複数の前記デバイスを同時に生成する際に、前記第2の基板がダイスされる前に、前記第1の基板の一部を排除することにより生成された隙間を利用して該部分的な該コーティングを実施することによって、実現されることからなる、請求項10に記載のデバイス。
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US10/723,095 US7294919B2 (en) | 2003-11-26 | 2003-11-26 | Device having a complaint element pressed between substrates |
PCT/US2004/037562 WO2005055311A2 (en) | 2003-11-26 | 2004-11-10 | Device having a compliant electrical interconnects and compliant sealing element |
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US (1) | US7294919B2 (ja) |
EP (1) | EP1687845A2 (ja) |
JP (1) | JP4664307B2 (ja) |
CN (1) | CN100444341C (ja) |
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WO (1) | WO2005055311A2 (ja) |
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WO2005055311A3 (en) | 2005-07-28 |
US7294919B2 (en) | 2007-11-13 |
TW200518241A (en) | 2005-06-01 |
WO2005055311A2 (en) | 2005-06-16 |
JP2007512707A (ja) | 2007-05-17 |
CN1906744A (zh) | 2007-01-31 |
US20050109455A1 (en) | 2005-05-26 |
CN100444341C (zh) | 2008-12-17 |
TWI357115B (en) | 2012-01-21 |
EP1687845A2 (en) | 2006-08-09 |
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