JP4658453B2 - 流動性チップ、それを製造する方法及び使用する方法並びにその方法の実施に用いる装置 - Google Patents
流動性チップ、それを製造する方法及び使用する方法並びにその方法の実施に用いる装置 Download PDFInfo
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- JP4658453B2 JP4658453B2 JP2003035535A JP2003035535A JP4658453B2 JP 4658453 B2 JP4658453 B2 JP 4658453B2 JP 2003035535 A JP2003035535 A JP 2003035535A JP 2003035535 A JP2003035535 A JP 2003035535A JP 4658453 B2 JP4658453 B2 JP 4658453B2
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- polycrystalline silicon
- flowable
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- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
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US10/298,129 US8021483B2 (en) | 2002-02-20 | 2002-11-14 | Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods |
Related Child Applications (1)
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JP2009128250A Division JP2009184922A (ja) | 2002-11-14 | 2009-05-27 | 流動性チップ及びそれを使用する方法 |
Publications (3)
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JP2004161595A JP2004161595A (ja) | 2004-06-10 |
JP2004161595A5 JP2004161595A5 (enrdf_load_stackoverflow) | 2006-03-30 |
JP4658453B2 true JP4658453B2 (ja) | 2011-03-23 |
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JP2003035535A Expired - Lifetime JP4658453B2 (ja) | 2002-11-14 | 2003-02-13 | 流動性チップ、それを製造する方法及び使用する方法並びにその方法の実施に用いる装置 |
JP2009128250A Pending JP2009184922A (ja) | 2002-11-14 | 2009-05-27 | 流動性チップ及びそれを使用する方法 |
JP2013247827A Pending JP2014058447A (ja) | 2002-11-14 | 2013-11-29 | 流動性チップ及びそれを使用する方法 |
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JP2009128250A Pending JP2009184922A (ja) | 2002-11-14 | 2009-05-27 | 流動性チップ及びそれを使用する方法 |
JP2013247827A Pending JP2014058447A (ja) | 2002-11-14 | 2013-11-29 | 流動性チップ及びそれを使用する方法 |
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JP (3) | JP4658453B2 (enrdf_load_stackoverflow) |
Families Citing this family (27)
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DE102004048948A1 (de) | 2004-10-07 | 2006-04-20 | Wacker Chemie Ag | Vorrichtung und Verfahren zum kontaminationsarmen, automatischen Brechen von Siliciumbruch |
WO2006093089A1 (ja) * | 2005-02-28 | 2006-09-08 | Kyocera Corporation | 多結晶シリコン基板、多結晶シリコンインゴット及びそれらの製造方法、光電変換素子、並びに光電変換モジュール |
KR101400075B1 (ko) | 2006-01-20 | 2014-05-28 | 에이엠지 아이디얼캐스트 솔라 코포레이션 | 광전 변환 소자용 기하학적 다결정 캐스트 실리콘 및 기하학적 다결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치 |
DE102006016323A1 (de) * | 2006-04-06 | 2007-10-11 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Zerkleinern und Sortieren von Polysilicium |
JP2008285351A (ja) * | 2007-05-16 | 2008-11-27 | Sumco Corp | 原料供給装置及びこれを備えた単結晶引上げ装置、並びに原料供給方法 |
JP5751748B2 (ja) * | 2009-09-16 | 2015-07-22 | 信越化学工業株式会社 | 多結晶シリコン塊群および多結晶シリコン塊群の製造方法 |
JP2011162367A (ja) * | 2010-02-05 | 2011-08-25 | Siltronic Japan Corp | チョクラルスキー法による無転位単結晶シリコンの製造方法 |
DE102010039752A1 (de) * | 2010-08-25 | 2012-03-01 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu dessen Herstellung |
DE102010040293A1 (de) * | 2010-09-06 | 2012-03-08 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
JP5777336B2 (ja) * | 2010-12-28 | 2015-09-09 | ジルトロニック アクチエンゲゼルシャフトSiltronic AG | 多結晶シリコン原料のリチャージ方法 |
JP5782996B2 (ja) * | 2011-11-01 | 2015-09-24 | 信越半導体株式会社 | 単結晶の製造方法 |
DE102012200992A1 (de) * | 2012-01-24 | 2013-07-25 | Wacker Chemie Ag | Dotierstoffarmes polykristallines Siliciumstück |
DE102012208473A1 (de) * | 2012-05-21 | 2013-11-21 | Wacker Chemie Ag | Polykristallines Silicium |
JP5915565B2 (ja) * | 2013-02-18 | 2016-05-11 | 信越半導体株式会社 | シリコン単結晶の製造方法およびシリコン単結晶ウェーハの製造方法 |
JP6217140B2 (ja) * | 2013-05-29 | 2017-10-25 | 三菱マテリアル株式会社 | 多結晶シリコン材料の製造方法 |
DE102013216557A1 (de) * | 2013-08-21 | 2015-02-26 | Wacker Chemie Ag | Polykristalline Siliciumbruchstücke und Verfahren zum Zerkleinern von polykristallinen Siliciumstäben |
JP6043746B2 (ja) * | 2014-03-20 | 2016-12-14 | 株式会社三共 | 遊技機 |
JP6420640B2 (ja) * | 2014-11-27 | 2018-11-07 | 株式会社トクヤマ | 多結晶シリコン塊破砕装置、多結晶シリコン破砕物の製造方法及び多結晶シリコン破砕物 |
JP6058610B2 (ja) * | 2014-10-14 | 2017-01-11 | 株式会社トクヤマ | 多結晶シリコン破砕物、多結晶シリコン破砕物の製造方法および多結晶シリコン塊破砕装置 |
CN106794992B (zh) * | 2014-10-14 | 2018-07-06 | 株式会社德山 | 多晶硅破碎物、其制造方法及多晶硅块破碎装置 |
JP2016147781A (ja) * | 2015-02-12 | 2016-08-18 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
EP4538429A1 (en) * | 2015-08-20 | 2025-04-16 | GlobalWafers Co., Ltd. | Systems for selectively feeding chunk polysilicon or granular polysilicon in a crystal growth chamber |
JP6569485B2 (ja) * | 2015-11-09 | 2019-09-04 | 株式会社Sumco | 原料のリチャージ又は単結晶引上げに用いられる蓋付容器 |
JP6376249B1 (ja) * | 2017-06-06 | 2018-08-22 | 株式会社Sumco | 選別装置、選別装置の製造方法およびシリコン単結晶インゴットの製造方法 |
CN109945654B (zh) * | 2017-12-21 | 2024-05-31 | 有研工程技术研究院有限公司 | 电子束熔炼炉拖锭装置 |
KR102752583B1 (ko) * | 2020-03-13 | 2025-01-10 | 에스케이실트론 주식회사 | 단결정 성장용 원료공급장치 |
CN117695973B (zh) * | 2024-02-06 | 2024-04-30 | 通威微电子有限公司 | 碳化硅粉料合成装置 |
Family Cites Families (22)
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US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
US4689109A (en) * | 1980-12-11 | 1987-08-25 | Sachs Emanuel M | String stabilized ribbon growth a method for seeding same |
DE3332447A1 (de) * | 1983-09-08 | 1985-03-21 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur befreiung von siliciumbruchstuecken von verunreinigungen |
JPS61136990A (ja) * | 1984-12-03 | 1986-06-24 | Toshiba Corp | 帯状シリコン結晶の製造方法 |
JPS62260791A (ja) * | 1986-05-08 | 1987-11-13 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置 |
JPS6483591A (en) | 1987-09-25 | 1989-03-29 | Toshiba Ceramics Co | Apparatus for producing single crystal |
JPH085655B2 (ja) * | 1991-06-25 | 1996-01-24 | 信越半導体株式会社 | 多結晶シリコンの洗浄方法 |
JP3309141B2 (ja) * | 1991-12-18 | 2002-07-29 | ノヴァ・サイエンス株式会社 | 電子ビーム溶解による結晶シリコンインゴットの鋳造方法および装置 |
JPH06100394A (ja) * | 1992-09-17 | 1994-04-12 | Nkk Corp | 単結晶製造用原料供給方法及び装置 |
JPH06144822A (ja) * | 1992-10-30 | 1994-05-24 | Tonen Chem Corp | 高純度微細シリコン粒子の製造方法及び高純度微細シリコン粒子を用いた高純度多結晶シリコンの製造方法 |
JP2922078B2 (ja) * | 1993-03-17 | 1999-07-19 | 株式会社トクヤマ | シリコンロッドの製造方法 |
US5488924A (en) * | 1993-12-06 | 1996-02-06 | Memc Electronic Materials | Hopper for use in charging semiconductor source material |
US5976481A (en) * | 1996-05-21 | 1999-11-02 | Tokuyama Corporation | Polycrystal silicon rod and production process therefor |
JPH1015422A (ja) * | 1996-07-03 | 1998-01-20 | Sumitomo Sitix Corp | 多結晶シリコンの破砕方法 |
JP3727470B2 (ja) * | 1997-06-03 | 2005-12-14 | 株式会社トクヤマ | 炭素含有量の少ない多結晶シリコンの製造方法 |
JP3523986B2 (ja) * | 1997-07-02 | 2004-04-26 | シャープ株式会社 | 多結晶半導体の製造方法および製造装置 |
JPH11314911A (ja) * | 1998-05-07 | 1999-11-16 | Sumitomo Sitix Amagasaki:Kk | 多結晶シリコンインゴットの製造方法 |
JP2000302594A (ja) * | 1999-02-18 | 2000-10-31 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法 |
JP2000247623A (ja) * | 1999-02-24 | 2000-09-12 | Kawasaki Steel Corp | シリコンの精製方法および装置 |
DE19914998A1 (de) * | 1999-04-01 | 2000-10-12 | Wacker Chemie Gmbh | Schwingförderer und Verfahren zur Förderung von Siliciumbruch |
JP3646570B2 (ja) * | 1999-07-01 | 2005-05-11 | 三菱住友シリコン株式会社 | シリコン連続鋳造方法 |
JP3723502B2 (ja) * | 2001-01-25 | 2005-12-07 | 住友チタニウム株式会社 | 半導体用多結晶シリコンの洗浄方法 |
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2003
- 2003-02-13 JP JP2003035535A patent/JP4658453B2/ja not_active Expired - Lifetime
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2009
- 2009-05-27 JP JP2009128250A patent/JP2009184922A/ja active Pending
-
2013
- 2013-11-29 JP JP2013247827A patent/JP2014058447A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2014058447A (ja) | 2014-04-03 |
JP2009184922A (ja) | 2009-08-20 |
JP2004161595A (ja) | 2004-06-10 |
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