JP4651773B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4651773B2
JP4651773B2 JP2000101787A JP2000101787A JP4651773B2 JP 4651773 B2 JP4651773 B2 JP 4651773B2 JP 2000101787 A JP2000101787 A JP 2000101787A JP 2000101787 A JP2000101787 A JP 2000101787A JP 4651773 B2 JP4651773 B2 JP 4651773B2
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Japan
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film
mask
region
channel
forming
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Expired - Fee Related
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JP2000101787A
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English (en)
Japanese (ja)
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JP2001068680A (ja
JP2001068680A5 (enrdf_load_stackoverflow
Inventor
英人 北角
律子 河崎
健司 笠原
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000101787A priority Critical patent/JP4651773B2/ja
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Publication of JP2001068680A5 publication Critical patent/JP2001068680A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2000101787A 1999-04-06 2000-04-04 半導体装置の作製方法 Expired - Fee Related JP4651773B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000101787A JP4651773B2 (ja) 1999-04-06 2000-04-04 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP9948199 1999-04-06
JP11-176120 1999-06-22
JP17612099 1999-06-22
JP11-99481 1999-06-22
JP2000101787A JP4651773B2 (ja) 1999-04-06 2000-04-04 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010226258A Division JP5337780B2 (ja) 1999-04-06 2010-10-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2001068680A JP2001068680A (ja) 2001-03-16
JP2001068680A5 JP2001068680A5 (enrdf_load_stackoverflow) 2007-06-07
JP4651773B2 true JP4651773B2 (ja) 2011-03-16

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Family Applications (1)

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JP2000101787A Expired - Fee Related JP4651773B2 (ja) 1999-04-06 2000-04-04 半導体装置の作製方法

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JP (1) JP4651773B2 (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346730B1 (en) * 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
US6362507B1 (en) * 1999-04-20 2002-03-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate
KR100915148B1 (ko) * 2003-03-07 2009-09-03 엘지디스플레이 주식회사 구동회로 일체형 액정표시장치의 스위칭 소자 및구동소자의제조방법
KR100924493B1 (ko) * 2003-06-27 2009-11-03 엘지디스플레이 주식회사 구동회로 일체형 액정표시장치용 어레이기판 제조방법
JP4831954B2 (ja) * 2003-11-14 2011-12-07 株式会社半導体エネルギー研究所 表示装置の作製方法
CN1906650B (zh) 2003-11-14 2012-05-09 株式会社半导体能源研究所 显示装置及其制造方法
KR100721555B1 (ko) 2004-08-13 2007-05-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
TWI339442B (en) 2005-12-09 2011-03-21 Samsung Mobile Display Co Ltd Flat panel display and method of fabricating the same
JP5525224B2 (ja) * 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
US9799773B2 (en) * 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
KR102430573B1 (ko) 2015-05-14 2022-08-08 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함한 백플레인 기판
CN109545795B (zh) * 2017-09-22 2020-10-30 群创光电股份有限公司 显示装置
JP2020027862A (ja) * 2018-08-10 2020-02-20 株式会社ジャパンディスプレイ 表示装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186053A (ja) * 1984-03-06 1985-09-21 Seiko Epson Corp 薄膜相補型ｍｏｓ回路
JP3942699B2 (ja) * 1997-08-29 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法

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